Dr Sonachand Adhikari
Grant-Funded Researcher (B)
School of Physics, Chemistry and Earth Sciences
College of Science
Sonachand’s introduction to scientific research occurred during his MSc course at the Anna University in 2007, where he deposited vanadium pentoxide thin films and investigated the electrochromic properties through opto-electrochemical analysis. He went on to pursue another Master’s degree (Master of Technology) at the Indian Institute of Technology Kanpur. There, he worked on the synthesis of InGaZnO targets through sintering, then, he subsequently used the InGaZnO targets to prepare thin films using pulsed laser depostion. In 2010, he joined the CSIR-CEERI Pilani as a Scientist and started working on GaN-based LEDs. At the CSIR-CEERI Pilani, his major responsibilty included, but not limited to -Operation and maintenance of MOCVD. -Epitaxial growth of GaN. -Fabrication of GaN/InGaN-based blue and white LEDs. -Teaching and supervising Master’s students. During his affiliation with the CSIR-CEERI (until 2023), he has received two subsequent promotions: Scientist to Senior Scientist (Assistant Professor) in 2014, and Senior Scientist to Principal Scientist (Associate Professor) in 2019. Looking for a change, he came to Australia in 2017 to pursue PhD at the Australian National University under the supervision of Prof. Chennupati Jagadish. During his PhD, he investigated the epitaxial growth of GaN nanowires, GaN/AlGaN core-shell nanowires, and incorporated AlGaN multiple quantum wells for applications in ultraviolet. Currently, he is a Post Doctoral research fellow at the Australian National University under the mentorship of Prof. Hoe Tan. Apart from work-life, Sonachand enjoys traveling and tinkering with his car.
Sonachand Adhikari completed his PhD from the Australian National University in 2023.
| Date | Position | Institution name |
|---|---|---|
| 2025 - ongoing | Grant Funded Researcher | University of Adelaide |
| 2023 - 2025 | Postdoctoral Fellow | Australian National University |
| 2010 - 2023 | Scientist | CSIR-CEERI |
| Language | Competency |
|---|---|
| English | Can read, write, speak, understand spoken and peer review |
| Hindi | Can read, write, speak and understand spoken |
| Manipuri | Can read, write, speak, understand spoken and peer review |
| Date | Institution name | Country | Title |
|---|---|---|---|
| 2017 - 2023 | Australian National University | Australia | PhD |
| 2008 - 2010 | Indian Institute of Technology Kanpur | India | M Tech |
| Year | Citation |
|---|---|
| 2026 | Duhan, P., Bartholazzi, G., Haggren, T., Gupta, B., Adhikari, S., Black, L. E., . . . Tan, H. H. (2026). Ultrathin CuO Hole-Selective Contact for Efficient GaAs Solar Cells. ACS Applied Energy Materials, 9(6), 3263-3271. |
| 2025 | Wong, W. W., Adhikari, S., Tomioka, K., Jagadish, C., & Tan, H. H. (2025). Crystal phase engineering of semiconductor nanostructures. MRS bulletin, 50(12), 1476-1491. |
| 2023 | Vilasam, A. G. S., Adhikari, S., Gupta, B., Balendhran, S., Higashitarumizu, N., Tournet, J., . . . Tan, H. H. (2023). Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition. Nanotechnology, 34(49), 495601-1-495601-11. Scopus5 Europe PMC1 |
| 2023 | Adhikari, S., Kremer, F., Lysevych, M., Jagadish, C., & Tan, H. H. (2023). Core-shell GaN/AlGaN nanowires grown by selective area epitaxy. Nanoscale Horizons, 8(4), 530-542. Scopus13 WoS11 Europe PMC2 |
| 2022 | Adhikari, S., Lem, O. L. C., Kremer, F., Vora, K., Brink, F., Lysevych, M., . . . Jagadish, C. (2022). Nonpolar AlxGa1-xN/AlyGa1-yN multiple quantum wells on GaN nanowire for UV emission. Nano Research, 15(8), 7670-7680. WoS12 |
| 2022 | Adhikari, S., Lysevych, M., Jagadish, C., & Tan, H. H. (2022). Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters. Crystal Growth & Design, 22(9), 5345-5353. Scopus13 WoS11 |
| 2021 | Mondal, R. K., Adhikari, S., Chatterjee, V., & Pal, S. (2021). Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies. MATERIALS RESEARCH BULLETIN, 140, 28 pages. Scopus88 WoS80 |
| 2017 | Singh, A. K., Adhikari, S., Gupta, R., & Deepak. (2017). Observation of decreasing resistivity of amorphous indium gallium zinc oxide thin films with an increasing oxygen partial pressure. JOURNAL OF APPLIED PHYSICS, 121(4), 6 pages. WoS3 |
| 2017 | Saini, B., Adhikari, S., Pal, S., & Kapoor, A. (2017). Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers. SUPERLATTICES AND MICROSTRUCTURES, 107, 127-135. WoS10 |
| 2016 | Prakash, N., Anand, K., Barvat, A., Pal, P., Singh, D. K., Jewariya, M., . . . Khanna, S. P. (2016). The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE. OPTICAL MATERIALS, 54, 26-31. WoS4 |
| 2015 | Pendem, V., Adhikari, S., Mathew, M., Singh, S., & Pal, S. (2015). Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers. SUPERLATTICES AND MICROSTRUCTURES, 88, 344-353. WoS6 |
| 2014 | Adhikari, S., Patra, S. K., Lunia, A., Kumar, S., Parjapat, P., Kushwaha, B., . . . Dhanavantri, C. (2014). Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate. Journal of Applied Mathematics and Physics, 02(12), 1113-1117. |
| 2014 | Patra, S. K., Adhikari, S., & Pal, S. (2014). Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction. APPLIED OPTICS, 53(18), 3890-3896. WoS9 Europe PMC2 |
| 2013 | Patra, S. K., Adhikari, S., & Pal, S. (2013). Design and Analysis of "Chess Board" Like Photonic Crystal Structure for Improved Light Extraction in GaN/InGaN LEDs. JOURNAL OF DISPLAY TECHNOLOGY, 9(5), 339-345. WoS10 |
| 2011 | Adhikari, S., Gupta, R., Garg, A., & Deepak. (2011). An investigation in InGaO<sub>3</sub>(ZnO)<sub>m</sub> pellets as cause of variability in thin film transistor characteristics. BULLETIN OF MATERIALS SCIENCE, 34(3), 447-454. WoS6 |
| Year | Citation |
|---|---|
| 2016 | Saini, B., Kapoor, A., Adhikari, S., & Pal, S. (2016). Numerical study of InGaN/GaN MQW solar cell with polarization compensating interlayer. In 2016 3rd International Conference on Emerging Electronics (ICEE) (pp. 1-3). IEEE. DOI |
| 2014 | Patra, S. K., Adhikari, S., Kumar, S., Lunia, A., Prajapat, P., khuswaha, B., . . . Dhanavantri, C. (2014). Top- and Bottom-Patterned GaN/InGaN Violet Light Emitting Diode Structure for Enhanced Light Extraction. In 12th International Conference on Fiber Optics and Photonics (pp. T3A.66). OSA. DOI |
| 2012 | Adhikari, S., Pal, S., & Dhanavantri, C. (2012). Polarization-Doped InGaN Based Blue Light-Emitting Diode with Reduced Efficiency Droop. In International Conference on Fibre Optics and Photonics (pp. WPo.50). OSA. DOI |
| 2012 | Patra, S. K., Adhikari, S., & Pal, S. (2012). Design of "Chess-board" like Photonic Crystal Structure for Enhancement of LED Light Extraction. In 2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC) (pp. 4 pages). INDIA, Kolkata: IEEE. DOI |