Dr Sonachand Adhikari

Grant-Funded Researcher (B)

School of Physics, Chemistry and Earth Sciences

College of Science


I hold a Bachelor of Science in Physics, a Master of Science from Anna University, India, a Master of Technology in Materials Science from the Indian Institute of Technology Kanpur, and a PhD in Physics from the Australian National University. My research expertise spans semiconductor materials, nanostructures, and optoelectronic devices, with a focus on the epitaxial growth, fabrication, and characterisation of III–V and III-nitride semiconductors for photonic and electronic applications.
 
My research career has included positions as a Scientist at CSIR–Central Electronics Engineering Research Institute (CEERI), India, and postdoctoral appointments at the Australian National University and the University of Adelaide (now Adelaide University). Across these roles, I have investigated semiconductor materials and devices for light-emitting diodes, ultraviolet photodetectors, photovoltaic devices, and near- and mid-infrared lasers. My work integrates advanced epitaxial growth techniques, micro- and nanofabrication, and structural, optical, and electrical characterisation to understand the relationships between material properties and device performance.
 
My research has contributed to the development of GaN/InGaN LEDs, GaN/AlGaN nanostructures for ultraviolet optoelectronics, flexible GaN photodetectors, lattice-matched InGaAsP materials for multijunction solar cells, and GaAs- and GaSb-based infrared lasers. I have also gained experience in thin-film oxide semiconductors, electrochromic materials, and display technologies, and have contributed to postgraduate teaching through curriculum development, laboratory instruction, and lectures.
 
To date, I have authored and co-authored more than 15 peer-reviewed publications, and my work has been recognised with an ACS Editors' Choice Award. My research interests lie at the intersection of physics, materials science, and engineering, with an emphasis on advancing semiconductor materials and devices for next-generation photonic and electronic technologies while fostering interdisciplinary collaborations.

Sonachand Adhikari completed his PhD from the Australian National University in 2023. 

Date Position Institution name
2025 - ongoing Grant Funded Researcher University of Adelaide
2023 - 2025 Postdoctoral Fellow Australian National University
2010 - 2023 Scientist CSIR-CEERI

Language Competency
English Can read, write, speak, understand spoken and peer review
Hindi Can read, write, speak and understand spoken
Manipuri Can read, write, speak, understand spoken and peer review

Date Institution name Country Title
2017 - 2023 Australian National University Australia PhD
2008 - 2010 Indian Institute of Technology Kanpur India M Tech
2005 - 2007 College of Engineering Guindy, Anna University India M Sc

Year Citation
2026 Duhan, P., Bartholazzi, G., Haggren, T., Gupta, B., Adhikari, S., Black, L. E., . . . Tan, H. H. (2026). Ultrathin CuO Hole-Selective Contact for Efficient GaAs Solar Cells. ACS Applied Energy Materials, 9(6), 3263-3271.
DOI
2026 Weerasinghe, J., Afifi, A. S., Zakir, J., Prasad, K., Adhikari, S., & Alexander, K. (2026). Surface Degradation of Stainless‐Steel Thruster Components Under Iodine Plasma Exposure. Nano Select, 7(5), e70147-1-e70147-12.
DOI
2025 Wong, W. W., Adhikari, S., Tomioka, K., Jagadish, C., & Tan, H. H. (2025). Crystal phase engineering of semiconductor nanostructures. MRS bulletin, 50(12), 1476-1491.
DOI
2024 Gupta, B., Parul., Lee, Y., Soo, J. Z., Adhikari, S., Cheong Lem, O. L., . . . Karuturi, S. (2024). Mechanically Exfoliated InP Thin Films for Solar Energy Conversion Devices. Small Science, 4(12).
DOI
2023 Vilasam, A. G. S., Adhikari, S., Gupta, B., Balendhran, S., Higashitarumizu, N., Tournet, J., . . . Tan, H. H. (2023). Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition. Nanotechnology, 34(49), 495601-1-495601-11.
DOI Scopus5 Europe PMC1
2023 Adhikari, S., Kremer, F., Lysevych, M., Jagadish, C., & Tan, H. H. (2023). Core-shell GaN/AlGaN nanowires grown by selective area epitaxy. Nanoscale Horizons, 8(4), 530-542.
DOI Scopus13 WoS11 Europe PMC2
2022 Adhikari, S., Lem, O. L. C., Kremer, F., Vora, K., Brink, F., Lysevych, M., . . . Jagadish, C. (2022). Nonpolar AlxGa1-xN/AlyGa1-yN multiple quantum wells on GaN nanowire for UV emission. Nano Research, 15(8), 7670-7680.
DOI WoS12
2022 Adhikari, S., Lysevych, M., Jagadish, C., & Tan, H. H. (2022). Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters. Crystal Growth & Design, 22(9), 5345-5353.
DOI Scopus13 WoS11
2021 Mondal, R. K., Adhikari, S., Chatterjee, V., & Pal, S. (2021). Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies. MATERIALS RESEARCH BULLETIN, 140, 28 pages.
DOI Scopus91 WoS83
2017 Singh, A. K., Adhikari, S., Gupta, R., & Deepak. (2017). Observation of decreasing resistivity of amorphous indium gallium zinc oxide thin films with an increasing oxygen partial pressure. JOURNAL OF APPLIED PHYSICS, 121(4), 6 pages.
DOI WoS3
2017 Saini, B., Adhikari, S., Pal, S., & Kapoor, A. (2017). Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers. SUPERLATTICES AND MICROSTRUCTURES, 107, 127-135.
DOI WoS10
2016 Prakash, N., Anand, K., Barvat, A., Pal, P., Singh, D. K., Jewariya, M., . . . Khanna, S. P. (2016). The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE. OPTICAL MATERIALS, 54, 26-31.
DOI WoS4
2015 Pendem, V., Adhikari, S., Mathew, M., Singh, S., & Pal, S. (2015). Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers. SUPERLATTICES AND MICROSTRUCTURES, 88, 344-353.
DOI WoS6
2014 Adhikari, S., Patra, S. K., Lunia, A., Kumar, S., Parjapat, P., Kushwaha, B., . . . Dhanavantri, C. (2014). Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate. Journal of Applied Mathematics and Physics, 02(12), 1113-1117.
DOI
2014 Patra, S. K., Adhikari, S., & Pal, S. (2014). Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction. APPLIED OPTICS, 53(18), 3890-3896.
DOI WoS9 Europe PMC2
2013 Patra, S. K., Adhikari, S., & Pal, S. (2013). Design and Analysis of "Chess Board" Like Photonic Crystal Structure for Improved Light Extraction in GaN/InGaN LEDs. JOURNAL OF DISPLAY TECHNOLOGY, 9(5), 339-345.
DOI WoS10
2011 Adhikari, S., Gupta, R., Garg, A., & Deepak. (2011). An investigation in InGaO<sub>3</sub>(ZnO)<sub>m</sub> pellets as cause of variability in thin film transistor characteristics. BULLETIN OF MATERIALS SCIENCE, 34(3), 447-454.
DOI WoS6
- M. Gilardoni, C., Eizagirre Barker, S., Curtin, C. L., Fraser, S. A., Powell, O. F. J., Lewis, D. K., . . . Stern, H. L. (2025). A single spin in hexagonal boron nitride for vectorial quantum magnetometry. Nature Communications, 16(1).
DOI

Year Citation
2016 Saini, B., Kapoor, A., Adhikari, S., & Pal, S. (2016). Numerical study of InGaN/GaN MQW solar cell with polarization compensating interlayer. In 2016 3rd International Conference on Emerging Electronics (ICEE) (pp. 1-3). IEEE.
DOI
2014 Patra, S. K., Adhikari, S., Kumar, S., Lunia, A., Prajapat, P., khuswaha, B., . . . Dhanavantri, C. (2014). Top- and Bottom-Patterned GaN/InGaN Violet Light Emitting Diode Structure for Enhanced Light Extraction. In 12th International Conference on Fiber Optics and Photonics (pp. T3A.66). OSA.
DOI
2012 Adhikari, S., Pal, S., & Dhanavantri, C. (2012). Polarization-Doped InGaN Based Blue Light-Emitting Diode with Reduced Efficiency Droop. In International Conference on Fibre Optics and Photonics (pp. WPo.50). OSA.
DOI
2012 Patra, S. K., Adhikari, S., & Pal, S. (2012). Design of "Chess-board" like Photonic Crystal Structure for Enhancement of LED Light Extraction. In 2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC) (pp. 4 pages). INDIA, Kolkata: IEEE.
DOI

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