Dr Sonachand Adhikari

Grant-Funded Researcher (B)

School of Physics, Chemistry and Earth Sciences

College of Science


Sonachand’s introduction to scientific research occurred during his MSc course at the Anna University in 2007, where he deposited vanadium pentoxide thin films and investigated the electrochromic properties through opto-electrochemical analysis. He went on to pursue another Master’s degree (Master of Technology) at the Indian Institute of Technology Kanpur. There, he worked on the synthesis of InGaZnO targets through sintering, then, he subsequently used the InGaZnO targets to prepare thin films using pulsed laser depostion. In 2010, he joined the CSIR-CEERI Pilani as a Scientist and started working on GaN-based LEDs. At the CSIR-CEERI Pilani, his major responsibilty included, but not limited to -Operation and maintenance of MOCVD. -Epitaxial growth of GaN. -Fabrication of GaN/InGaN-based blue and white LEDs. -Teaching and supervising Master’s students. During his affiliation with the CSIR-CEERI (until 2023), he has received two subsequent promotions: Scientist to Senior Scientist (Assistant Professor) in 2014, and Senior Scientist to Principal Scientist (Associate Professor) in 2019. Looking for a change, he came to Australia in 2017 to pursue PhD at the Australian National University under the supervision of Prof. Chennupati Jagadish. During his PhD, he investigated the epitaxial growth of GaN nanowires, GaN/AlGaN core-shell nanowires, and incorporated AlGaN multiple quantum wells for applications in ultraviolet. Currently, he is a Post Doctoral research fellow at the Australian National University under the mentorship of Prof. Hoe Tan. Apart from work-life, Sonachand enjoys traveling and tinkering with his car.

Sonachand Adhikari completed his PhD from the Australian National University in 2023. 

Date Position Institution name
2025 - ongoing Grant Funded Researcher University of Adelaide
2023 - 2025 Postdoctoral Fellow Australian National University
2010 - 2023 Scientist CSIR-CEERI

Language Competency
English Can read, write, speak, understand spoken and peer review
Hindi Can read, write, speak and understand spoken
Manipuri Can read, write, speak, understand spoken and peer review

Date Institution name Country Title
2017 - 2023 Australian National University Australia PhD
2008 - 2010 Indian Institute of Technology Kanpur India M Tech

Year Citation
2026 Duhan, P., Bartholazzi, G., Haggren, T., Gupta, B., Adhikari, S., Black, L. E., . . . Tan, H. H. (2026). Ultrathin CuO Hole-Selective Contact for Efficient GaAs Solar Cells. ACS Applied Energy Materials, 9(6), 3263-3271.
DOI
2025 Wong, W. W., Adhikari, S., Tomioka, K., Jagadish, C., & Tan, H. H. (2025). Crystal phase engineering of semiconductor nanostructures. MRS bulletin, 50(12), 1476-1491.
DOI
2023 Vilasam, A. G. S., Adhikari, S., Gupta, B., Balendhran, S., Higashitarumizu, N., Tournet, J., . . . Tan, H. H. (2023). Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition. Nanotechnology, 34(49), 495601-1-495601-11.
DOI Scopus5 Europe PMC1
2023 Adhikari, S., Kremer, F., Lysevych, M., Jagadish, C., & Tan, H. H. (2023). Core-shell GaN/AlGaN nanowires grown by selective area epitaxy. Nanoscale Horizons, 8(4), 530-542.
DOI Scopus13 WoS11 Europe PMC2
2022 Adhikari, S., Lem, O. L. C., Kremer, F., Vora, K., Brink, F., Lysevych, M., . . . Jagadish, C. (2022). Nonpolar AlxGa1-xN/AlyGa1-yN multiple quantum wells on GaN nanowire for UV emission. Nano Research, 15(8), 7670-7680.
DOI WoS12
2022 Adhikari, S., Lysevych, M., Jagadish, C., & Tan, H. H. (2022). Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters. Crystal Growth & Design, 22(9), 5345-5353.
DOI Scopus13 WoS11
2021 Mondal, R. K., Adhikari, S., Chatterjee, V., & Pal, S. (2021). Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies. MATERIALS RESEARCH BULLETIN, 140, 28 pages.
DOI Scopus88 WoS80
2017 Singh, A. K., Adhikari, S., Gupta, R., & Deepak. (2017). Observation of decreasing resistivity of amorphous indium gallium zinc oxide thin films with an increasing oxygen partial pressure. JOURNAL OF APPLIED PHYSICS, 121(4), 6 pages.
DOI WoS3
2017 Saini, B., Adhikari, S., Pal, S., & Kapoor, A. (2017). Polarization compensation at low p-GaN doping density in InGaN/GaN p-i-n solar cells: Effect of InGaN interlayers. SUPERLATTICES AND MICROSTRUCTURES, 107, 127-135.
DOI WoS10
2016 Prakash, N., Anand, K., Barvat, A., Pal, P., Singh, D. K., Jewariya, M., . . . Khanna, S. P. (2016). The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE. OPTICAL MATERIALS, 54, 26-31.
DOI WoS4
2015 Pendem, V., Adhikari, S., Mathew, M., Singh, S., & Pal, S. (2015). Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers. SUPERLATTICES AND MICROSTRUCTURES, 88, 344-353.
DOI WoS6
2014 Adhikari, S., Patra, S. K., Lunia, A., Kumar, S., Parjapat, P., Kushwaha, B., . . . Dhanavantri, C. (2014). Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate. Journal of Applied Mathematics and Physics, 02(12), 1113-1117.
DOI
2014 Patra, S. K., Adhikari, S., & Pal, S. (2014). Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction. APPLIED OPTICS, 53(18), 3890-3896.
DOI WoS9 Europe PMC2
2013 Patra, S. K., Adhikari, S., & Pal, S. (2013). Design and Analysis of "Chess Board" Like Photonic Crystal Structure for Improved Light Extraction in GaN/InGaN LEDs. JOURNAL OF DISPLAY TECHNOLOGY, 9(5), 339-345.
DOI WoS10
2011 Adhikari, S., Gupta, R., Garg, A., & Deepak. (2011). An investigation in InGaO<sub>3</sub>(ZnO)<sub>m</sub> pellets as cause of variability in thin film transistor characteristics. BULLETIN OF MATERIALS SCIENCE, 34(3), 447-454.
DOI WoS6

Year Citation
2016 Saini, B., Kapoor, A., Adhikari, S., & Pal, S. (2016). Numerical study of InGaN/GaN MQW solar cell with polarization compensating interlayer. In 2016 3rd International Conference on Emerging Electronics (ICEE) (pp. 1-3). IEEE.
DOI
2014 Patra, S. K., Adhikari, S., Kumar, S., Lunia, A., Prajapat, P., khuswaha, B., . . . Dhanavantri, C. (2014). Top- and Bottom-Patterned GaN/InGaN Violet Light Emitting Diode Structure for Enhanced Light Extraction. In 12th International Conference on Fiber Optics and Photonics (pp. T3A.66). OSA.
DOI
2012 Adhikari, S., Pal, S., & Dhanavantri, C. (2012). Polarization-Doped InGaN Based Blue Light-Emitting Diode with Reduced Efficiency Droop. In International Conference on Fibre Optics and Photonics (pp. WPo.50). OSA.
DOI
2012 Patra, S. K., Adhikari, S., & Pal, S. (2012). Design of "Chess-board" like Photonic Crystal Structure for Enhancement of LED Light Extraction. In 2012 5TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC) (pp. 4 pages). INDIA, Kolkata: IEEE.
DOI

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