Professor Nelson Tansu
Head of School, Elect. & Mech. Engineering
School of Electrical and Mechanical Engineering
Faculty of Sciences, Engineering and Technology
Eligible to supervise Masters and PhD - email supervisor to discuss availability.
Prof. Nelson Tansu is a Fellow of the US National Academy of Inventors (NAI Fellow; elected in 2016), IEEE Fellow (elevated in 2021), and Clarivate Analytics Highly Cited Researcher (in 2018). Since January 2021, Tansu is the Head of the School of Electrical and Electronics Engineering (EEE) and Professor of Quantum Electronics at The University of Adelaide (Adelaide, South Australia, Australia). From July 2003 until January 2021, Tansu was a faculty member at Lehigh University, where he was the Daniel E. '39 and Patricia M. Smith Endowed Chair Professor in the Department of Electrical and Computer Engineering (ECE), and Director for the Center for Photonics and Nanoelectronics (CPN) at Lehigh University in the United States. His research interests include the materials, devices, computational sciences, and integrated technologies based on semiconductors for sustainability, biomedical sciences, power electronics, and quantum materials.
Selected keywords for Tansu's research areas include:
photonics, nanoelectronics, quantum devices, semiconductor lasers, VCSELs, III-nitride semiconductors, GaN semiconductors, III-V and III-V-nitrides, III-oxide technologies, LED technologies, MOCVD, Epitaxy, MBE, power electronics, integrated technologies, biomedical devices and systems, computational sciences for nanoscales, machine learning / AI, and quantum materials.
My research focuses on the physics, materials, devices, and integrated technologies based on wide bandgap (III-nitride and oxide-based) semiconductors and 2D materials for photonics, sustainability, health sciences, and computing/communications. My past works had resulted in seminal contributions in III-nitride (AlInGaN and InGaAsN) semiconductor materials and devices with impacts on communications, solid-state lighting, power electronics, energy efficiency, and renewable energy technologies. My future directions include i) the integration of the III-nitride semiconductors, oxide semiconductors, and 2D materials for new technologies enabled by such hybrid integration, and the pursuit of integrated technologies for biomedical and quantum computing applications, and ii) the use of machine learning for driving discoveries and innovations in basic material sciences and device technologies.
Nelson Tansu - Google Scholar
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Appointments
Date Position Institution name 2021 - ongoing Head of School & Professor The University of Adelaide 2021 - ongoing Professor of Quantum Electronics The University of Adelaide 2014 - 2021 Director Lehigh University 2014 - 2021 Daniel E. & Patricia M. Smith Endowed Chair Professor (Tenure) Lehigh University 2014 - 2014 New Century Endowed Chair Professor (Tenure) Lehigh University 2013 - 2014 New Century Endowed Chair Associate Professor (Tenure) Lehigh University 2010 - 2013 Class of 1961 Associate Professor (with Tenure) Lehigh University 2009 - 2010 Associate Professor (with Tenure) Lehigh University 2007 - 2009 Rossin Assistant Professor (Term Chair) Lehigh University 2003 - 2007 Assistant Professor Lehigh University -
Language Competencies
Language Competency English Can read, write, speak, understand spoken and peer review Indonesian Can read, write, speak, understand spoken and peer review Malay Can read, write, speak, understand spoken and peer review -
Education
Date Institution name Country Title 1998 - 2003 University of Wisconsin–Madison United States Ph.D. (Electrical Engineering) 1995 - 1998 University of Wisconsin–Madison United States B.S. (Applied Mathematics, Electrical Engineering, and Physics - AMEP) -
Research Interests
Artificial Intelligence Biomedical Engineering Biophotonics Compound Semiconductors Functional Materials Knowledge Representation and Machine Learning Lasers and Quantum Electronics Materials Engineering Nanoelectronics Nanophotonics Numerical and Computational Mathematics Optoelectronics & Photonics Photonics Photonics and Electro-Optical Engineering Photonics, Optoelectronics and Optical Communications Power and Energy Systems Engineering Synthesis of Materials Theory and Design of Materials
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Journals
Year Citation 2023 Xue, H., Muyeed, S. A. A., Palmese, E., Rogers, D., Song, R., Tansu, N., & Wierer, J. J. (2023). Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes. IEEE Journal of Quantum Electronics, 59(2), 9 pages.
Scopus3 WoS22023 Islam, M. S., Upadhyay, A., Ako, R. T., Lawrence, N. P., Sultana, J., Ranjan, A., . . . Abbott, D. (2023). Ultrahigh-Q Resonance in Bound States in the Continuum–Enabled Plasmonic Terahertz Metasurface. Advanced Photonics Research, 4(9), 2300121-1-2300121-8.
2023 Liu, C., Pokharel, N., Lin, Q., Ponce, M. A. B., Sun, J., Lane, D., . . . Mawst, L. J. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 41(6), 8 pages.
2022 Sun, W., Fu, H., Borovac, D., Goodrich, J. C., Tan, C. K., & Tansu, N. (2022). Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters. IEEE Journal of Quantum Electronics, 58(2), 1-6.
Scopus12022 Wei, X., Muyeed, S. A. A., Xue, H., Palmese, E., Song, R., Tansu, N., & Wierer, J. J. (2022). Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates. Photonics Research, 10(1), 33-40.
Scopus2 WoS32022 Fragkos, I. E., Sun, W., Borovac, D., Song, R., Wierer, J., Wierer, J., . . . Tansu, N. (2022). Delta InN-InGaN Quantum Wells with AlGaN Interlayers for Long Wavelength Emission. IEEE Journal of Quantum Electronics, 58(2), 1.
2021 Goodrich, J. C., Tan, C. K., Borovac, D., & Tansu, N. (2021). Prospects for hole doping in dilute-anion III-nitrides. Applied Physics Letters, 118(7), 1-6.
Scopus1 WoS12021 Gupta, M., Hawari, H. F., Kumar, P., Burhanudin, Z. A., & Tansu, N. (2021). Functionalized reduced graphene oxide thin films for ultrahigh co<inf>2</inf> gas sensing performance at room temperature. Nanomaterials, 11(3), 1-18.
Scopus20 WoS19 Europe PMC62021 Palmese, E., Peart, M. R., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2021). Thermal oxidation rates and resulting optical constants of Al<inf>0.83</inf>In<inf>0.17</inf>N films grown on GaN. Journal of Applied Physics, 129(12), 6 pages.
Scopus6 WoS32021 Ullah, Z., Nawi, I., Witjaksono, G., Tansu, N., Khattak, M. I., Junaid, M., & Usman, F. (2021). Electrically enhanced graphene-metal plasmonic antenna for infrared sensing. Optik, 241, 1-10.
Scopus2 WoS22021 Fu, H., Goodrich, J. C., Ogidi-Ekoko, O., & Tansu, N. (2021). Power electronics figure-of-merit of ScAlN. Applied Physics Letters, 119(7), 1-4.
Scopus3 WoS42021 Muyeed, S. A. A., Borovac, D., Xue, H., Wei, X., Song, R., Tansu, N., & Wierer, J. J. (2021). Recombination rates of InxGa1-xN/AlyGa1-yN/GaN multiple quantum wells emitting from 640 to 565 nm. IEEE Journal of Quantum Electronics, 57(6), 1.
Scopus2 WoS12021 Witjaksono, G., Junaid, M., Khir, M. H., Ullah, Z., Tansu, N., Saheed, M. S. B. M., . . . Nawaz, R. (2021). Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide. Molecules, 26(21), 1-16.
Scopus22 WoS5 Europe PMC42021 Mawst, L. J., Kim, H., Smith, G., Sun, W., & Tansu, N. (2021). Strained-layer quantum well materials grown by MOCVD for diode laser application. Progress in Quantum Electronics, 75, 100303.
Scopus10 WoS72020 Fu, H., Goodrich, J. C., & Tansu, N. (2020). Band alignment of ScAlN/GaN heterojunction. APPLIED PHYSICS LETTERS, 117(23), 1-4.
WoS72020 Liu, C. -Y., Huang, H. -C., Choi, W., Kim, J., Jung, K., Sun, W., . . . Li, X. (2020). Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy. ACS APPLIED ELECTRONIC MATERIALS, 2(2), 419-425.
Scopus16 WoS132020 Ogidi-Ekoko, O. N., Liang, W., Xue, H., & Tansu, N. (2020). Machine Learning Inspired Design of Complex-Shaped GaN Subwavelength Grating Reflectors. IEEE Photonics Journal, 13(1), 1-13.
Scopus1 WoS22020 Junaid, M., Khir, M. H. M., Witjaksono, G., Tansu, N., Saheed, M. S. M., Kumar, P., . . . Usman, F. (2020). Boron-doped reduced graphene oxide with tunable bandgap and enhanced surface plasmon resonance. Molecules, 25(16), 19 pages.
Scopus29 WoS19 Europe PMC112020 Borovac, D., Sun, W., Peart, M. R., Song, R., Wierer, J. J., & Tansu, N. (2020). Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy. Journal of Crystal Growth, 548, 5 pages.
Scopus7 WoS52020 Klrll, E. A., Turegun, F. A., Selcuk, B., Gultekin, M. H., Tansu, N., Erozenci, A., & Onal, B. (2020). Does Previous Open Stone Surgery Affect the Outcome of Shock Wave Lithotripsy Treatment in Children?. Urologia Internationalis, 105(1-2), 52-58.
Europe PMC12020 Junaid, M., Khir, M. H. M., Witjaksono, G., Ullah, Z., Tansu, N., Mohamed Saheed, M. S., . . . Siddiqui, M. A. (2020). A review on graphene-based light emitting functional devices. Molecules, 25(18), 32 pages.
Scopus17 WoS12 Europe PMC52020 Peart, M. R., Borovac, D., Sun, W., Song, R., Tansu, N., & Wierer, J. J. (2020). AlInN/GaN diodes for power electronic devices. Applied Physics Express, 13(9), 4 pages.
Scopus7 WoS12020 Ogidi-Ekoko, O. N., Goodrich, J. C., Howzen, A. J., Peart, M. R., Strandwitz, N. C., Wierer, J. J., & Tansu, N. (2020). Electrical properties of MgO/GaN metal-oxide-semiconductor structures. Solid-State Electronics, 172, 7 pages.
Scopus7 WoS62020 Al Muyeed, S. A., Wei, X., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2020). Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates. Journal of Crystal Growth, 540, 6 pages.
Scopus3 WoS12020 Ullah, Z., Witjaksono, G., Nawi, I., Tansu, N., Khattak, M. I., & Junaid, M. (2020). A review on the development of tunable graphene nanoantennas for terahertz optoelectronic and plasmonic applications. Sensors (Switzerland), 20(5), 65 pages.
Scopus81 WoS64 Europe PMC92020 Goodrich, J. C., Farinha, T. G., Ju, L., Howzen, A. J., Kundu, A., Ogidi-Ekoko, O. N., . . . Strandwitz, N. C. (2020). Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition. Journal of Crystal Growth, 536, 5 pages.
Scopus6 WoS62020 Borovac, D., Sun, W., Tan, C. K., & Tansu, N. (2020). Electronic properties of dilute-As InGaNAs alloys: A first-principles study. Journal of Applied Physics, 127(1), 6 pages.
Scopus2 WoS22020 Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2020). On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE. Journal of Crystal Growth, 533, 8 pages.
Scopus11 WoS72020 Ullah, Z., Nawi, I., Witjaksono, G., Tansu, N., Khattak, M. I., Junaid, M., . . . Magsi, S. A. (2020). Dynamic absorption enhancement and equivalent resonant circuit modeling of tunable graphene-metal hybrid antenna. Sensors (Switzerland), 20(11), 34 pages.
Scopus11 WoS10 Europe PMC82020 Sun, W., Kim, H., Mawst, L. J., & Tansu, N. (2020). Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness. Journal of Crystal Growth, 531, 6 pages.
Scopus10 WoS72019 Fu, H., Goodrich, J. C., Ogidi-Ekoko, O., & Tansu, N. (2019). Type-II AlInN/ZnGeN<inf>2</inf> quantum wells for ultraviolet laser diodes. Journal of Applied Physics, 126(13), 5 pages.
Scopus6 WoS42019 Wierer, J. J., & Tansu, N. (2019). III-Nitride Micro-LEDs for Efficient Emissive Displays. Laser and Photonics Reviews, 13(9), 15 pages.
Scopus102 WoS852019 Al Muyeed, S. A., Sun, W., Peart, M. R., Lentz, R. M., Wei, X., Borovac, D., . . . Wierer, J. J. (2019). Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers. Journal of Applied Physics, 126(21), 7 pages.
Scopus13 WoS112019 Fu, H., Sun, W., Ogidi-Ekoko, O., Goodrich, J. C., & Tansu, N. (2019). Gain characteristics of InGaN quantum wells with AlGaInN barriers. AIP Advances, 9(4), 7 pages.
Scopus4 WoS52019 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2019). Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports, 9(1), 8 pages.
Scopus5 WoS72019 Peart, M. R., Wei, X., Borovac, D., Sun, W., Tansu, N., & Wierer, J. J. (2019). Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices. ACS APPLIED ELECTRONIC MATERIALS, 1(8), 1367-1371.
Scopus11 WoS62018 Sun, W., Tan, C. K., Wierer, J. J., & Tansu, N. (2018). Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports, 8(1), 7 pages.
Scopus11 WoS92018 Zeng, G., Sun, W., Song, R., Tansu, N., & Krick, B. A. (2018). Erratum: Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear (Scientific reports (2017) 7 1 (14126)). Scientific reports, 8(1), 2580.
2018 Wei, X., Al Muyeed, S. A., Peart, M. R., Sun, W., Tansu, N., & Wierer, J. J. (2018). Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching. Applied Physics Letters, 113(12), 4 pages.
Scopus8 WoS72018 Fragkos, I. E., & Tansu, N. (2018). Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides. Scientific Reports, 8(1), 7 pages.
Scopus17 WoS142018 Peart, M. R., Tansu, N., & Wierer, J. J. (2018). AlInN for Vertical Power Electronic Devices. IEEE Transactions on Electron Devices, 65(10), 4276-4281.
Scopus11 WoS92018 Borovac, D., Tan, C. K., & Tansu, N. (2018). First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor. AIP Advances, 8(8), 8 pages.
Scopus4 WoS42018 Zeng, G., Yang, X., Tan, C. K., Marvel, C. J., Koel, B. E., Tansu, N., & Krick, B. A. (2018). Shear-Induced Changes of Electronic Properties in Gallium Nitride. ACS Applied Materials and Interfaces, 10(34), 29048-29057.
Scopus5 WoS4 Europe PMC22018 Sun, W., Al Muyeed, S. A., Song, R., Wierer, J. J., & Tansu, N. (2018). Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission. Applied Physics Letters, 112(20), 5 pages.
Scopus26 WoS272018 Zeng, G., Tansu, N., & Krick, B. A. (2018). Moisture dependent wear mechanisms of gallium nitride. Tribology International, 118, 120-127.
Scopus17 WoS142018 Borovac, D., Tan, C. K., & Tansu, N. (2018). First-Principle Study of the Optical Properties of Dilute-P GaN<inf>1-xPx Alloys. Scientific Reports, 8(1), 9 pages.
Scopus6 WoS32017 Sun, W., Tan, C. K., & Tansu, N. (2017). AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports, 7(1), 8 pages.
Scopus30 WoS27 Europe PMC52017 Huang, Y., Badar, M., Nitkowski, A., Weinroth, A., Tansu, N., & Zhou, C. (2017). Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device. Biomedical Optics Express, 8(8), 3856-3867.
Scopus24 WoS18 Europe PMC92017 Sun, W., Tan, C. K., & Tansu, N. (2017). III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports, 7(1), 8 pages.
Scopus28 WoS30 Europe PMC42017 Zeng, G., Yang, X., Skinner, C. H., Koel, B. E., Tansu, N., & Krick, B. A. (2017). Controlling factors of GaN wear. Tribology and Lubrication Technology, 73(3), 22-28.
Scopus6 WoS42017 Tan, C. K., Sun, W., Wierer, J. J., & Tansu, N. (2017). Effect of interface roughness on Auger recombination in semiconductor quantum wells. AIP Advances, 7(3), 8 pages.
Scopus15 WoS132017 Borovac, D., Tan, C. K., & Tansu, N. (2017). Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports, 7(1), 8 pages.
Scopus6 WoS62017 Gültekin, M. H., Türegün, F. A., Ozkan, B., Tülü, B., Güleç, G. G., Tansu, N., . . . Önal, B. (2017). Does Previous Open Renal Stone Surgery Affect the Outcome of Extracorporeal Shockwave Lithotripsy Treatment in Adults with Renal Stones?. Journal of Endourology, 31(12), 1295-1300.
Scopus3 WoS3 Europe PMC12017 Fragkos, I. E., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes. Scientific Reports, 7(1), 12 pages.
Scopus9 WoS8 Europe PMC22017 Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports, 7(1), 13 pages.
Scopus16 WoS132017 Zeng, G., Sun, W., Song, R., Tansu, N., & Krick, B. A. (2017). Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports, 7(1), 6 pages.
Scopus15 WoS14 Europe PMC42017 Al Muyeed, S. A., Sun, W., Wei, X., Song, R., Koleske, D. D., Tansu, N., & Wierer, J. J. (2017). Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers. AIP Advances, 7(10), 7 pages.
Scopus35 WoS252016 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). First-Principle Electronic Properties of Dilute-P GaN 1-x P x Alloy for Visible Light Emitters. Scientific Reports, 6(1), 9 pages.
Scopus18 WoS17 Europe PMC12016 Zhu, P., Zhu, H., Qin, W., Dantas, B. H., Sun, W., Tan, C. K., & Tansu, N. (2016). Narrow-linewidth red-emission Eu<sup>3+</sup>-doped TiO2 spheres for light-emitting diodes. Journal of Applied Physics, 119(12), 8 pages.
Scopus31 WoS272016 Tan, C. K., Sun, W., Borovac, D., & Tansu, N. (2016). Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports, 6(1), 7 pages.
Scopus26 WoS22 Europe PMC22016 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). Dilute-As AlNAs alloy for deep-ultraviolet emitter. Scientific Reports, 6(1), 7 pages.
Scopus9 WoS9 Europe PMC12016 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports, 6(1), 6 pages.
Scopus34 WoS39 Europe PMC42016 Zeng, G., Tan, C. K., Tansu, N., & Krick, B. A. (2016). Ultralow wear of gallium nitride. Applied Physics Letters, 109(5), 5 pages.
Scopus39 WoS352016 Wierer, J. J., Tansu, N., Fischer, A. J., & Tsao, J. Y. (2016). III-nitride quantum dots for ultra-efficient solid-state lighting. Laser and Photonics Reviews, 10(4), 612-622.
Scopus32 WoS302015 Tan, C. K., & Tansu, N. (2015). Auger recombination rates in dilute-As GaNAs semiconductor. AIP Advances, 5(5), 7 pages.
Scopus24 WoS232015 Jagota, M., & Tansu, N. (2015). Conductivity of nanowire arrays under random and ordered orientation configurations. Scientific Reports, 5(1), 5 pages.
Scopus49 WoS48 Europe PMC62015 Tan, C. K., & Tansu, N. (2015). Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology, 10(2), 107-109.
Scopus59 WoS59 Europe PMC102015 Tan, C. K., & Tansu, N. (2015). First-principle natural band alignment of GaN / dilute-As GaNAs alloy. AIP Advances, 5(1), 8 pages.
Scopus23 WoS132015 Tansu, N., & So, F. (2015). Special Section Guest Editorial:Solid-State Lighting: Photonics and Technologies. Journal of Photonics for Energy, 5(1), 057601.
Scopus12015 Kafafi, Z. H., Martín-Palma, R. J., Nogueira, A. F., O'Carroll, D. M., Pietron, J. J., Samuel, I. D. W., . . . Tsakalakos, L. (2015). The role of photonics in energy. Journal of Photonics for Energy, 5(1), 44 pages.
Scopus15 WoS132015 Ozkan, B., Dogan, C., Can, G. E., Tansu, N., Erozencı, A., & Onal, B. (2015). Does ureteral stenting matter for stone size? A retrospectıve analyses of 1361 extracorporeal shock wave lithotripsy patients. Central European Journal of Urology, 68(3), 358-364.
Scopus6 WoS5 Europe PMC22015 Zhu, P., & Tansu, N. (2015). Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays. Applied Optics, 54(20), 6305-6312.
Scopus26 WoS24 Europe PMC62015 Zhu, P., & Tansu, N. (2015). Effect of packing density and packing geometry on light extraction of iii-nitride light-emitting diodes with microsphere arrays. Photonics Research, 3(4), 184-191.
Scopus35 WoS352015 Zhu, P., Tan, C. -K., Sun, W., & Tansu, N. (2015). Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. APPLIED OPTICS, 54(34), 10299-10303.
WoS13 Europe PMC32015 Tansu, N., & So, F. (2015). Solid-State Lighting: Photonics and Technologies. JOURNAL OF PHOTONICS FOR ENERGY, 5, 1 page. 2014 Tansu, N. (2014). Photonics-advances in fundamental sciences and engineering technologies of light. Photonics, 1(1), 1-8.
Scopus2 WoS12014 Horng, R. H., Lau, K. M., Kuo, H. C., & Tansu, N. (2014). Solid-state lighting with high brightness, high efficiency, and low cost. International Journal of Photoenergy, 2014, 3 pages.
2013 Banerjee, P. P., Evans, D. R., Lee, W., Reshetnyak, V. Y., & Tansu, N. (2013). Hybrid organic-inorganic materials for novel photonic applications. Applied Optics, 52(22), HM1-HM3.
Scopus4 WoS4 Europe PMC12013 Onal, B., Citgez, S., Tansu, N., Emin, G., Demirkesen, O., Talat, Z., . . . Erozenci, A. (2013). What changed in the management of pediatric stones after the introduction of minimally invasive procedures? A single-center experience over 24 years. Journal of Pediatric Urology, 9(6 PART A), 910-914.
Scopus28 WoS26 Europe PMC162013 Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2013). Predictive factors and management of steinstrasse after shock wave lithotripsy in pediatric urolithiasis-a multivariate analysis study. Journal of Endourology, 27(2), 126. 2013 Zhang, J., & Tansu, N. (2013). Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. IEEE Photonics Journal, 5(2), 11 pages.
Scopus87 WoS942013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 19(1), 6-11.
Scopus5 WoS82013 Onal, B., Tansu, N., Demirkesen, O., Yalcin, V., Huang, L., Nguyen, H. T., . . . Erozenci, A. (2013). Nomogram and scoring system for predicting stone-free status after extracorporeal shock wave lithotripsy in children with urolithiasis. BJU International, 111(2), 344-352.
Scopus45 WoS37 Europe PMC172013 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Investigation of large Stark shifts in InGaN/GaN multiple quantum wells. Journal of Applied Physics, 113(3), 5 pages.
Scopus20 WoS212013 Banerjee, P. P., Evans, D. R., Lee, W., Reshetnyak, V. Y., & Tansu, N. (2013). Hybrid organic-inorganic materials for photonic applications. Optical Materials Express, 3(8), 1149-1151.
Scopus4 WoS12013 Zhang, J., & Tansu, N. (2013). Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers. IEEE Photonics Journal, 5(2), 9 pages.
Scopus35 WoS342013 Liu, G., Zhang, J., Tan, C. K., & Tansu, N. (2013). Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes. IEEE Photonics Journal, 5(2), 11 pages.
Scopus112 WoS1392013 Li, X. H., Zhu, P., Liu, G., Zhang, J., Song, R., Ee, Y. K., . . . Tansu, N. (2013). Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO<inf>2</inf> microsphere arrays. IEEE/OSA Journal of Display Technology, 9(5), 324-332.
Scopus87 WoS832013 Zhao, H., Jiao, X., & Tansu, N. (2013). Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes. IEEE/OSA Journal of Display Technology, 9(4), 199-206.
Scopus12 WoS92013 Zhu, P., Liu, G., Zhang, J., & Tansu, N. (2013). FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays. IEEE/OSA Journal of Display Technology, 9(5), 317-323.
Scopus99 WoS982013 Zhao, H., Liu, G., Zhang, J., Arif, R. A., & Tansu, N. (2013). Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes. IEEE/OSA Journal of Display Technology, 9(4), 212-225.
Scopus186 WoS1722013 Tan, C. K., Zhang, J., Li, X. H., Liu, G., Tayo, B. O., & Tansu, N. (2013). First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters. IEEE/OSA Journal of Display Technology, 9(4), 272-279.
Scopus97 WoS942013 Tansu, N., So, F., & Pei, Q. (2013). Guest editorial recent advances in solid state lighting. IEEE/OSA Journal of Display Technology, 9(4), 187-189.
Scopus12012 Xu, L., Patel, D., Menoni, C. S., Pikal, J. M., Yeh, J. Y., Huang, J. Y. T., . . . Tansu, N. (2012). Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells. IEEE Photonics Journal, 4(6), 2382-2389.
Scopus8 WoS72012 Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2012). Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well. IEEE Photonics Journal, 4(6), 2262-2271.
Scopus16 WoS172012 Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2012). Predictive factors and management of steinstrasse after shock wave lithotripsy in pediatric urolithiasis - A multivariate analysis study. Urology, 80(5), 1127-1131.
Scopus15 WoS12 Europe PMC82012 Koo, W. H., Youn, W., Zhu, P., Li, X. H., Tansu, N., & So, F. (2012). Light extraction of organic light emitting diodes by defective hexagonal-close-packed array. Advanced Functional Materials, 22(16), 3454-3459.
Scopus164 WoS1582012 Liu, G., Zhang, J., Li, X. H., Huang, G. S., Paskova, T., Evans, K. R., . . . Tansu, N. (2012). Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates. Journal of Crystal Growth, 340(1), 66-73.
Scopus50 WoS512011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Efficient terahertz generation within InGaN/GaN multiple quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 17(1), 48-53.
Scopus28 WoS222011 Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes. Applied Physics Letters, 98(15), 3 pages.
Scopus94 WoS952011 Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. IEEE Journal of Quantum Electronics, 47(6), 870-877.
Scopus222011 Liu, G., Zhao, H., Zhang, J., Park, J. H., Mawst, L. J., & Tansu, N. (2011). Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters, 6(1), 10 pages.
Scopus68 WoS67 Europe PMC132011 Li, X. H., Song, R., Ee, Y. K., Kumnorkaew, P., Gilchrist, J. F., & Tansu, N. (2011). Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios. IEEE Photonics Journal, 3(3), 489-499.
Scopus194 WoS1972011 Zhao, H., Liu, G., Zhang, J., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2011). Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express, 19(104), A991-A1007.
Scopus553 WoS539 Europe PMC672011 Zhang, J., Tong, H., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2011). Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents. Journal of Applied Physics, 109(5), 6 pages.
Scopus73 WoS652011 Zhang, J., Zhao, H., & Tansu, N. (2011). Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes. Applied Physics Letters, 98(17), 3 pages.
Scopus127 WoS1252011 Zhang, J., Kutlu, S., Liu, G., & Tansu, N. (2011). High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 110(4), 6 pages.
Scopus44 WoS412011 Zhang, J., & Tansu, N. (2011). Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes. Journal of Applied Physics, 110(11), 5 pages.
Scopus163 WoS1512011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of fast and slow decays in InGaN/GaN quantum wells. Applied Physics Letters, 99(8), 3 pages.
Scopus53 WoS492010 Zhang, J., Zhao, H., & Tansu, N. (2010). Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters, 97(11), 3 pages.
Scopus161 WoS1452010 Tong, H., Zhang, J., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2010). Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition. Applied Physics Letters, 97(11), 3 pages.
Scopus80 WoS752010 Zhao, H., Liu, G., & Tansu, N. (2010). Analysis of InGaN-delta-InN quantum wells for light-emitting diodes. Applied Physics Letters, 97(13), 3 pages.
Scopus180 WoS802010 Zhao, H., & Tansu, N. (2010). Optical gain characteristics of staggered InGaN quantum wells lasers. Journal of Applied Physics, 107(11), 12 pages.
Scopus118 WoS952010 Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire. Journal of Crystal Growth, 312(8), 1311-1315.
Scopus110 WoS1092010 Zhao, H., Liu, G., Arif, R. A., & Tansu, N. (2010). Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes. Solid-State Electronics, 54(10), 1119-1124.
Scopus209 WoS2032010 Tansu, N., Zhao, H., Liu, G., Li, X. H., Zhang, J., Tong, H., & Ee, Y. K. (2010). III-nitride photonics. IEEE Photonics Journal, 2(2), 241-248.
Scopus155 WoS1542010 Sun, G., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., Tansu, N., & Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. Applied Physics Letters, 97(2), 3 pages.
Scopus11 WoS112010 Xu, G., Ding, Y. J., Zhao, H., Liu, G., Jamil, M., Tansu, N., . . . Speck, J. S. (2010). THz generation from InN films due to destructive interference between optical rectification and photocurrent surge. Semiconductor Science and Technology, 25(1), 5 pages.
Scopus26 WoS262009 Zhao, H., Liu, G., Li, X. H., Huang, G. S., Poplawsky, J. D., Penn, S. T., . . . Tansu, N. (2009). Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile. Applied Physics Letters, 95(6), 3 pages.
Scopus184 WoS1512009 Ee, Y. K., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2009). Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1066-1072.
Scopus174 WoS1662009 Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Zhao, H., Gilchrist, J. F., & Tansu, N. (2009). Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1218-1225.
Scopus132 WoS1262009 Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Gilchrist, J. F., & Tansu, N. (2009). Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express, 17(16), 13747-13757.
Scopus132 WoS130 Europe PMC212009 Tansu, N., Schubert, E. F., Kuo, H. C., & Smowton, P. M. (2009). Introduction to the issue on solid-state lighting. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1025-1027.
Scopus2 WoS22009 Onal, B., Citgez, S., Tansu, N., Talat, Z., & Oner, A. (2009). Tablets of the potassium citrate may cause a stone-like image: A case report. Urological Research, 37(3), 165-168.
Scopus3 WoS3 Europe PMC42009 Zhao, H., Arif, R. A., & Tansu, N. (2009). Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1104-1114.
Scopus153 WoS1332009 Zhao, H., Arif, R. A., Ee, Y. K., & Tansu, N. (2009). Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes. IEEE Journal of Quantum Electronics, 45(1), 66-78.
Scopus231 WoS2112008 Tripathy, S. K., Xu, G., Mu, X., Ding, Y. J., Jamil, M., Arif, R. A., . . . Khurgin, J. B. (2008). Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate. Applied Physics Letters, 93(20), 3 pages.
Scopus18 WoS162008 Kumnorkaew, P., Ee, Y. K., Tansu, N., & Gilchrist, J. F. (2008). Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. Langmuir, 24(21), 12150-12157.
Scopus168 WoS159 Europe PMC252008 Jamil, M., Zhao, H., Higgins, J. B., & Tansu, N. (2008). Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE. Journal of Crystal Growth, 310(23), 4947-4953.
Scopus47 WoS442008 Jamil, M., Arif, R. A., Ee, Y. K., Tong, H., Higgins, J. B., & Tansu, N. (2008). MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates. Physica Status Solidi (A) Applications and Materials Science, 205(7), 1619-1624.
Scopus36 WoS362008 Tsvid, G., Kirch, J., Mawst, L. J., Kanskar, M., Cai, J., Arif, R. A., . . . Blood, P. (2008). Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers. IEEE Journal of Quantum Electronics, 44(8), 732-739.
Scopus14 WoS102008 Jamil, M., Zhao, H., Higgins, J. B., & Tansu, N. (2008). MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode. Physica Status Solidi (A) Applications and Materials Science, 205(12), 2886-2891.
Scopus37 WoS372008 Mawst, L. J., Huang, J. Y. T., Xu, D. P., Yeh, J. Y., Tsvid, G., Kuech, T. F., & Tansu, N. (2008). MOCVD-grown dilute nitride type II quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 14(4), 979-991.
Scopus18 WoS192008 Zhao, H., Arif, R. A., & Tansu, N. (2008). Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers. Journal of Applied Physics, 104(4), 7 pages.
Scopus120 WoS1052008 Ee, Y. K., Zhao, H., Arif, R. A., Jamil, M., & Tansu, N. (2008). Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 310(7-9), 2320-2325.
Scopus46 WoS432008 Arif, R. A., Zhao, H., Ee, Y. K., & Tansu, N. (2008). Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes. IEEE Journal of Quantum Electronics, 44(6), 573-580.
Scopus137 WoS1272008 Sahinkanat, T., Ekerbicer, H., Onal, B., Tansu, N., Resim, S., Citgez, S., & Oner, A. (2008). Evaluation of the Effects of Relationships Between Main Spatial Lower Pole Calyceal Anatomic Factors on the Success of Shock-Wave Lithotripsy in Patients with Lower Pole Kidney Stones. Urology, 71(5), 801-805.
Scopus45 WoS32 Europe PMC182008 Hsu, C. C., Lin, J. H., Chen, Y. S., Lin, Y. H., Kuo, H. C., Wang, S. C., . . . Mawst, L. J. (2008). Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells. Journal of Physics D: Applied Physics, 41(8), 6 pages.
Scopus3 WoS32008 Arif, R. A., Zhao, H., & Tansu, N. (2008). Type-II InGaN-GaNAs quantum wells for lasers applications. Applied Physics Letters, 92(1), 3 pages.
Scopus115 WoS1142007 Arif, R. A., Ee, Y. K., & Tansu, N. (2007). Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Applied Physics Letters, 91(9), 3 pages.
Scopus292 WoS2642007 Ee, Y. K., Arif, R. A., Tansu, N., Kumnorkaew, P., & Gilchrist, J. F. (2007). Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays. Applied Physics Letters, 91(22), 3 pages.
Scopus152 WoS1402006 Anton, O., Xu, L. F., Patel, D., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., . . . Tansu, N. (2006). The intrinsic frequency response of 1.3-μm InGaAsN lasers in the range T = 10 °C-80 °C. IEEE Photonics Technology Letters, 18(16), 1774-1776.
Scopus12 WoS112006 Yeh, J. Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., & Tansu, N. (2006). Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells. Applied Physics Letters, 88(5), 1-3.
Scopus25 WoS242006 Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2006). Optical determination of the electron effective mass of strain compensated In <inf>0.4</inf>Ga <inf>0.6</inf>As <inf>0.995</inf>N <inf>0.005</inf>/GaAs single quantum well. Applied Physics Letters, 89(17), 3 pages.
Scopus15 WoS152006 Demirkesen, O., Önal, B., Tansu, N., Altintaş, R., Yalçin, V., & Öner, A. (2006). Efficacy of extracorporeal shock wave lithotripsy for isolated lower caliceal stones in children compared with stones in other renal locations. Urology, 67(1), 170-174.
Scopus60 Europe PMC392005 Tansu, N., & Mawst, L. J. (2005). Current injection efficiency of InGaAsN quantum-well lasers. Journal of Applied Physics, 97(5), 18 pages.
Scopus138 WoS1322005 Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., . . . Tansu, N. (2005). Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics, 98(12), 5 pages.
Scopus6 WoS62005 Thränhardt, A., Kuznetsova, I., Schlichenmaier, C., Koch, S. W., Shterengas, L., Belenky, G., . . . Chow, W. W. (2005). Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory. Applied Physics Letters, 86(20), 1-3.
Scopus44 WoS382005 Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters, 86(7), 1-3.
Scopus28 WoS242005 Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers. IEEE Photonics Technology Letters, 17(9), 1779-1781.
Scopus8 WoS62005 Lai, F. I., Kuo, H. C., Chang, Y. H., Tsai, M. Y., Chu, C. P., Kuo, S. Y., . . . Mawst, L. J. (2005). Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(8), 6204-6207.
Scopus4 WoS42005 Anton, O., Menoni, C. S., Yeh, J. Y., Mawst, L. J., Pikal, J. M., & Tansu, N. (2005). Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements. IEEE Photonics Technology Letters, 17(5), 953-955.
Scopus12 WoS112004 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2004). Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition. Journal of Physics Condensed Matter, 16(31), S3277-S3318.
Scopus63 WoS602004 Tansu, N., Öbek, C., Önal, B., Yalçin, V., Öner, A., & Solok, V. (2004). A Simple Position to Provide Better Imaging of Upper Ureteral Stones Close to the Crista Iliaca during Extracorporeal Shock Wave Lithotripsy Using the Siemens Lithostar. European Urology, 45(3), 352-355.
Scopus2 Europe PMC22004 Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2004). InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers. Journal of Applied Physics, 96(8), 4653-4655.
Scopus38 WoS362004 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm. Electronics Letters, 40(12), 739-741.
Scopus19 WoS172004 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well. Journal of Crystal Growth, 265(1-2), 1-7.
Scopus1 WoS22004 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers. IEEE Photonics Technology Letters, 16(3), 741-743.
Scopus18 WoS192004 Önal, B., Demirkesen, O., Tansu, N., Kalkan, M., Altintaş, R., & Yalçin, V. (2004). The impact of caliceal pelvic anatomy on stone clearance after shock wave lithotripsy for pediatric lower pole stones. Journal of Urology, 172(3), 1082-1086.
Scopus59 Europe PMC312003 Kalkan, M., Önal, B., Demirkesen, O., Uzun, H., Tansu, N., & Yalçin, V. (2003). The efficacy of ESWL for pediatric ureteral stones. Turk Uroloji Dergisi, 29(2), 180-184.
Scopus12003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition. IEEE Journal on Selected Topics in Quantum Electronics, 9(5), 1220-1227.
Scopus76 WoS732003 Tansu, N., & Mawst, L. J. (2003). Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions. IEEE Journal of Quantum Electronics, 39(10), 1205-1210.
Scopus44 WoS392003 Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2003). (In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm. Applied Physics Letters, 83(14), 2742-2744.
Scopus59 WoS552003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers. Applied Physics Letters, 83(13), 2512-2514.
Scopus87 WoS762003 Tansu, N., Quandt, A., Kanskar, M., Mulhearn, W., & Mawst, L. J. (2003). High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy. Applied Physics Letters, 83(1), 18-20.
Scopus59 WoS582003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm. Applied Physics Letters, 82(23), 4038-4040.
Scopus78 WoS712003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing. Applied Physics Letters, 82(18), 3008-3010.
Scopus24 WoS242003 Tansu, N., & Mawst, L. J. (2003). The role of hole leakage in 1300-nm InGaAsN quantum-well lasers. Applied Physics Letters, 82(10), 1500-1502.
Scopus73 WoS652003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Experimental evidence of carrier leakage in InGaAsN quantum-well lasers. Applied Physics Letters, 83(11), 2112-2114.
Scopus74 WoS642002 Tansu, N., & Mawst, L. J. (2002). Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers. IEEE Photonics Technology Letters, 14(8), 1052-1054.
Scopus60 WoS582002 Tansu, N., Kirsch, N. J., & Mawst, L. J. (2002). Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers. Applied Physics Letters, 81(14), 2523-2525.
Scopus165 WoS1482002 Tansu, N., & Mawst, L. J. (2002). Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers. IEEE Photonics Technology Letters, 14(4), 444-446.
Scopus111 WoS1022002 Tansu, N. (2002). Nitrogen lowers threshold current in quantum-well lasers. LASER FOCUS WORLD, 38(12), 9. 2002 Tansu, N., Chang, Y. L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R. T., & Mawst, L. J. (2002). Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers. IEEE Journal of Quantum Electronics, 38(6), 640-651.
Scopus56 WoS452001 Tansu, N., & Mawst, L. J. (2001). High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers. IEEE Photonics Technology Letters, 13(3), 179-181.
Scopus86 WoS782001 Demirkesen, O., Yaycioglu, O., Onal, B., Kalkan, M., Tansu, N., Yalcin, V., . . . Solok, V. (2001). Extracorporeal shockwave lithotripsy for stones in abnormal urinary tracts: Analysis of results and comparison with normal urinary tracts. Journal of Endourology, 15(7), 681-685.
Scopus202001 Öbek, C., Önal, B., Kantay, K., Kalkan, M., Yalçin, V., Öner, A., . . . Tansu, N. (2001). The efficacy of extracorporeal shock wave lithotripsy for isolated lower pole calculi compared with isolated middle and upper caliceal calculi. Journal of Urology, 166(6), 2081-2085.
Scopus79 Europe PMC532000 Tansu, N., Zhou, D., & Mawst, L. J. (2000). Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 μm) region diode lasers. IEEE Photonics Technology Letters, 12(6), 603-605.
Scopus23 WoS221999 Demirkesen, O., Tansu, N., Yaycioglu, O., Onal, B., Yalcin, V., & Solok, V. (1999). Extracorporeal shockwave lithotripsy in the pediatric population. Journal of Endourology, 13(3), 147-150.
Scopus46 Europe PMC27 -
Book Chapters
Year Citation 2016 Meyyappan, M., Pelesko, J., Giurgiutiu, V., Lyshevski, S. E., Tansu, N., Arif, R., & Jin, Z. (2016). Materials and nanoscience. In R. C. Dorf (Ed.), Sensors, Nanoscience, Biomedical Engineering, and Instruments (Vol. e-book, 1 ed., pp. 4-1-4-90). Bosa Roca, USA: Taylor & Francis Inc. 2011 Mawst, L. J., & Tansu, N. (2011). Quantum-Well Lasers and Their Applications. In Comprehensive Semiconductor Science and Technology (Vol. 1-6, pp. 626-682). Elsevier.
Scopus22008 Arif, R. A., & Tansu, N. (2008). Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers. In Springer Series in Materials Science (Vol. 105, pp. 503-524). Springer Berlin Heidelberg.
Scopus12008 Tansu, N., & Mawst, L. J. (2008). Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition. In Springer Series in Materials Science (Vol. 105, pp. 449-501). Springer Berlin Heidelberg.
Scopus1 -
Conference Papers
Year Citation 2022 Liu, C., Seitz, M., Dwyer, M., Kirch, J., Pasayat, S. S., Tansu, N., . . . Mawst, L. (2022). Optimization of Violet Emitting Quantum Wells with Insertion of AlGaN Layers and Temperature Ramp-up. In 2022 Compound Semiconductor Week, CSW 2022. Online: IEEE.
2021 Liang, W., Ogidi-Ekoko, O. N., Fu, H., & Tansu, N. (2021). Inverse Design of InGaN/GaN Quantum Wells. In 2021 IEEE Photonics Conference, IPC 2021 - Proceedings (pp. 1-2). online: IEEE.
2021 Fu, H., Sun, W., Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2021). Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers. In 2021 IEEE Photonics Conference, IPC 2021 - Proceedings (pp. 1-2). online: IEEE.
2020 Witjaksono, G., Ullah, Z., Nawi, I. B., Tansu, N., Khattak, M. I., & Junaid, M. (2020). Absorption enhancement of tunable terahertz hybrid graphene-metal antenna with stacked graphene configuration. In Proceedings of the IEEE 8th International Conference on Photonics (ICP 2020) (pp. 15-17). online: IEEE.
Scopus12020 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2020). P-type Doping of Dilute-Anion III-Nitride Materials. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings (pp. 1-2). online: IEEE.
2020 Fu, H., Goodrich, J. C., & Tansu, N. (2020). Band alignment of nearly lattice-matched ScAlN/GaN heterojunction. In Proceedings of the 2020 IEEE Photonics Conference (IPC) (pp. 1-2). online: IEEE.
2020 Ogidi-Ekoko, O. N., Liang, W., Xue, H., & Tansu, N. (2020). GaN Subwavelength Gratings by Machine Learning Design. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings (pp. 1-2). online: IEEE.
2019 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2019). Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings (pp. 2 pages). San Antonio, TX: IEEE.
2019 Fu, H., Goodrich, J. C., & Tansu, N. (2019). Gain Properties of Type-II AlInN / ZnGeN<inf>2</inf> Quantum Wells for Ultraviolet Laser Diodes. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings (pp. 1-2). online: IEEE.
2018 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2018). Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Online: IEEE.
2018 Fragkos, I. E., Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2018). Experimental Studies of Delta-InN Incorporation in InGaN Quantum Well for Long Wavelength Emission. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
Scopus12018 Borovac, D., Sun, W., Tan, C. K., & Tansu, N. (2018). Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
2018 Fu, H., Sun, W., Ogidi-Ekoko, O., & Tansu, N. (2018). Gain Properties of InGaN Quantum Wells with AlGaInN Barriers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
2018 Wei, X., Muyeed, S. A. A., Peart, M., Tansu, N., & Wierer, J. J. (2018). Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
2018 Sun, W., Kim, H., Mawst, L. J., & Tansu, N. (2018). Interplay of Strain Compensation and Relaxation in High-Performance InGaAs Quantum Well Lasers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
WoS12018 Fragkos, I. E., & Tansu, N. (2018). Titanium Nitride Surface Plasmon Coupling for Enhanced IQE in GaN:Eu Red Light Emitters. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
2018 Muyeed, S. A. A., Sun, W., Wei, X., Song, R., Koleske, D., Tansu, N., & Wierer, J. J. (2018). Improvement in the Radiative Efficiency of InGaN-Based Multiple Quantum Wells using AlGaN Interlayers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE.
2017 Reid, E. T., & Tansu, N. (2017). Analysis of integrated tunable III-nitride lasers with dual distributed Bragg reflectors. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 167-168). online: IEEE.
2017 Borovac, D., Tan, C. K., & Tansu, N. (2017). Investigation of refractive index in dilute-P GaNP alloys by first-principle. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 257-258). online: IEEE.
2017 Sun, W., Tan, C. K., & Tansu, N. (2017). Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 255-256). online: IEEE.
2017 Slosberg, A. M., & Tansu, N. (2017). Design analysis of subwavelength grating mirror for GaN based VCSELs structure. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 231-232). online: IEEE.
Scopus1 WoS12017 Tansu, N. (2017). High efficiency III-Nitride LEDs. In Optics InfoBase Conference Papers Vol. Part F72-SSL 2017. OSA.
2017 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2017). Dilute-anion boron nitride semiconductor for light emitters. In 2017 IEEE Photonics Conference (IPC) Vol. 2017-January (pp. 59-60). Online: IEEE.
WoS22017 Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 275-276). online: IEEE.
2017 Tan, C. K., Sun, W., Borovac, D., Wierer, J. J., & Tansu, N. (2017). Dilute-Anion III-nitride: A potential visible light emitter. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 834-835). online: IEEE.
2015 Tan, C. K., & Tansu, N. (2015). Dilute-As AlNAs semiconductor for ultraviolet emitters. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 521-522). Reston, VA: IEEE.
2015 Sun, W., Tan, C. K., & Tansu, N. (2015). Artificially-engineered InGaN-based digital alloy for optoelectronics. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 519-520). Reston, VA: IEEE.
2015 Tansu, N., Tan, C. K., & Wierer, J. J. (2015). Tutorial on III-Nitride solid state lighting and smart lighting. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 26-27). Reston, VA: IEEE.
2015 Tan, C. K., & Tansu, N. (2015). Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 577-578). Reston, VA: IEEE.
Scopus42014 Onal, B., Dogan, C., Ozkan, B., Tansu, N., Can, G. E., & Erozenci, A. (2014). THE USING OF STENT ACCORDING TO STONE BURDEN IN PELVIS RENALIS CALCULI TREATED WITH ESWL: USE IT OR NOT ?. In JOURNAL OF UROLOGY Vol. 191 (pp. E279). Orlando, FL: ELSEVIER SCIENCE INC.
2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 (pp. 2 pages). San Jose, CA: IEEE.
2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013. 2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2013. 2012 Zhao, H., Jiao, X., & Tansu, N. (2012). Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes. In Asia Communications and Photonics Conference, ACP. OSA.
Scopus22012 Zhu, P., Zhang, J., Liu, G., & Tansu, N. (2012). FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 433-434). Burlingame, CA: IEEE.
Scopus12012 Zhang, J., & Tansu, N. (2012). Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 604-605). Burlingame, CA: IEEE.
2012 Liu, G., Zhang, J., Tan, C. K., & Tansu, N. (2012). Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 431-432). Burlingame, CA: IEEE.
2012 Tan, C. K., Zhang, J., Li, X. H., Liu, G., & Tansu, N. (2012). Dilute-As GaNAs semiconductor for visible emitters. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 695-696). Burlingame, CA: IEEE.
2012 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012. 2012 Liu, G., Zhang, J., Zhao, H., & Tansu, N. (2012). Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 8262 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2012 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. 2 pages). San Jose, CA: IEEE.
2012 Tansu, N., Zhang, J., Liu, G., Zhao, H., Tan, C. K., & Zhu, P. (2012). Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes. In Asia Communications and Photonics Conference, ACP 2012. OSA.
2012 Zhang, J., Tong, H., Liu, G., & Tansu, N. (2012). III-nitride based thermoelectric - current status and future potential. In Asia Communications and Photonics Conference, ACP 2012. OSA.
2012 Koo, W., Yun, W., Zhu, P., Li, X. H., Tansu, N., & So, F. (2012). Light extraction of phosphorescent oleds by defective hexagonal-close-packed array. In Digest of Technical Papers - SID International Symposium Vol. 43 (pp. 1474-1476). Wiley.
2012 Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2012). PREDICTIVE FACTORS AND THE MANAGEMENT OF STEINSTRASSE AFTER SHOCK WAVE LITHOTRIPSY IN PEDIATRIC UROLITHIASIS-A MULTIVARIATE ANALYSIS STUDY. In JOURNAL OF ENDOUROLOGY Vol. 26 (pp. A344). MARY ANN LIEBERT, INC. 2012 Onal, B., Tansu, N., Demirkesen, O., Yalcin, V., Huang, L., Nguyen, H. T., . . . Erozenci, A. (2012). NOMOGRAM FOR PREDICTING STONE-FREE STATUS AFTER SHOCK WAVE LITHOTRIPSY IN CHILDREN WITH UROLITHIASIS. In JOURNAL OF ENDOUROLOGY Vol. 26 (pp. A343). MARY ANN LIEBERT, INC. 2012 Zhang, J., Zhao, H., & Tansu, N. (2012). Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers. In A. A. Belyanin, & P. M. Smowton (Eds.), NOVEL IN-PLANE SEMICONDUCTOR LASERS XI Vol. 8277 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011 Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. OSA.
Scopus12011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. OSA.
2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011 Cao, W., Biser, J. M., Ee, Y. K., Li, X. H., Tansu, N., Chan, H. M., & Vinci, R. P. (2011). Dislocation structure of GaN films grown on planar and nano-patterned sapphire. In Journal of Applied Physics Vol. 110 (pp. 4 pages). AMER INST PHYSICS.
Scopus23 WoS212011 Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. 2011 Zhang, J., Zhao, H., & Tansu, N. (2011). Gain characteristics of deep UV AlGaN quantum wells lasers. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7953 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2011 Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Vol. 47 (pp. 870-877). IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.
WoS212011 Zhang, J., Tong, H., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2011). Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7939 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2011 Zhang, J., Tong, H., Herbsommer, J. A., & Tansu, N. (2011). Analysis of thermoelectric properties of AlInN semiconductor alloys. In B. Witzigmann, F. Henneberger, Y. Arakawa, & A. Freundlich (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7933 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2011 Zhao, H., Zhang, J., Liu, G., Toma, T., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2011). Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7939 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2011 Tansu, N., Zhao, H., Zhang, J., Liu, G., Li, X. H., Ee, Y. K., . . . Huang, G. S. (2011). Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering. In K. P. Streubel, L. W. Tu, H. Jeon, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7954 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
Scopus22011 Liu, G., Zhao, H., Zhang, J., Park, J. H., Mawst, L. J., & Tansu, N. (2011). Selective area epitaxy of ultra-high density InGaN based quantum dots. In 2011 IEEE Winter Topicals, WTM 2011 (pp. 35-36). IEEE.
Scopus12011 Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
Scopus32011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
2011 Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-Delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
2011 Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. 2011 Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. 2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple Quantum Wells. In Optics InfoBase Conference Papers. 2011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. 2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-Delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers. 2011 Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. 2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple quantum wells. In Optics InfoBase Conference Papers.
Scopus12011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-Polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers. 2011 Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO<inf>2</inf> microsphere arrays. In K. P. Streubel, L. W. Tu, H. Jeon, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7954 (pp. 5 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2011 Tansu, N., Zhang, J., & Zhao, H. (2011). Physics of novel III-nitride gain media for visible and ultraviolet lasers. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 509-510). Arlington, VA: IEEE.
2011 Xu, L. F., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2011). Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 682-683). Arlington, VA: IEEE.
2010 Ee, Y. K., Li, X. H., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. OSA.
2010 Zhao, H., Liu, G., Ee, Y. K., Li, X. H., Tong, H., Zhang, J., . . . Tansu, N. (2010). Novel device concepts for high-efficiency InGaN-based light-emitting diodes. In J. I. Chyi, Y. Nanishi, H. Morkoc, C. W. Litton, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7602 (pp. 7 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
Scopus12010 Ee, Y. K., Li, X. H., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE. 2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE. 2010 Zhao, H., Liu, G., Li, X. H., Ee, Y. K., Tong, H., Zhang, J., . . . Tansu, N. (2010). Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE. 2010 Liu, G., Zhao, H., Park, J. H., Mawst, L. J., & Tansu, N. (2010). Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Zhao, H., Huang, G. S., . . . Khurgin, J. B. (2010). Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
2010 Liu, G., Zhao, H., Hyung Park, J., Mawst, L. J., & Tansu, N. (2010). Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010 Zhang, J., Zhao, H., & Tansu, N. (2010). Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 63-64). Denver, CO: IEEE.
2010 Liu, G., Zhao, H., Zhang, J., Tong, H., Huang, G. S., & Tansu, N. (2010). Growths of lattice-matched AlInN / GaN for optoelectronics applications. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 534-535). Denver, CO: IEEE.
2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010 Zhao, H., Liu, G., & Tansu, N. (2010). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. In K. P. Streubel, H. Joen, L. W. Tu, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7617 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2010 Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. In K. P. Streubel, H. Joen, L. W. Tu, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7617 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2010 Liu, G., Zhao, H., & Tansu, N. (2010). Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells. In B. Witzigmann, F. Henneberger, Y. Arakawa, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7597 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2010 Zhao, H., Zhang, J., Toma, T., Liu, G., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2010). Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 532-533). Denver, CO: IEEE.
2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Zhao, H., Huang, G. S., . . . Khurgin, J. B. (2010). Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010 Zhao, H., Liu, G., Li, X. H., Ee, Y. K., HuaTong., Zhang, J., . . . Tansu, N. (2010). Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010 Li, X. H., Tong, H., Zhao, H., & Tansu, N. (2010). Band structure calculation of dilute-As GaNAs by first principle. In B. Witzigmann, F. Henneberger, Y. Arakawa, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7597 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
Scopus1 WoS12010 Tong, H., Zhang, J., Zhao, H., Liu, G., Handara, V. A., Herbsommer, J. A., & Tansu, N. (2010). Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method. In J. I. Chyi, Y. Nanishi, H. Morkoc, C. W. Litton, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7602 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
Scopus2 WoS12010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers. OSA.
2009 Ee, Y. K., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2009). Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode. In Optics InfoBase Conference Papers. OSA.
2009 Zhao, H., Liu, G., Li, X., Arif, R. A., Huang, G. S., Ee, Y. K., & Tansu, N. (2009). Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 7231.
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2005 Mawst, L. J., Yeh, J. Y., Van Roy, T., & Tansu, N. (2005). Characteristics of MOCVD-grown dilute-nitride quantum well lasers. In C. Mermelstein, & D. P. Bour (Eds.), Progress in Biomedical Optics and Imaging - Proceedings of SPIE Vol. 5738 (pp. 192-203). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING.
Scopus4 WoS22005 Xu, L., Patel, D., Vaschenko, G., Antón, O., Menoni, C. S., Yeh, J. Y., . . . Tansu, N. (2005). Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells. In 2005 Conference on Lasers and Electro-Optics, CLEO Vol. 3 (pp. 2134-2136). 2005 Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2005). Effect of nitrogen content and temperature on the f <inf>3dB</inf> of 1.3μm Dilute-Nitride SQW Lasers. In 2005 Conference on Lasers and Electro-Optics, CLEO Vol. 1 (pp. 92-94). 2005 Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures. In 2005 Conference on Lasers and Electro-Optics, CLEO Vol. 1 (pp. 101-103). IEEE.
Scopus22004 Anton, O., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L., Pikal, J. M., & Tansu, N. (2004). Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (λ=1.2-1.3μm) lasers. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 607-610). 2004 Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2004). Dilute-nitride mid-infrared type-II "W" quantum-well lasers on InP substrates. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 621-623). 2004 Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). The effect of Nitrogen in InGaAsN quantum well lasers. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 611-612). 2004 Shterengas, L., Yeh, J. Y., Mawst, L. J., Tansu, N., & Belenky, G. (2004). Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 615-616). 2004 Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). Carrier transport and injection efficiency of InGaAsN quantum-well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 693-694). Rio Grande, PR: IEEE. 2004 Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2004). The 3dB bandwidth of strain-compensated dilute-nitride quantum-well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 697-698). Rio Grande, PR: IEEE. 2004 Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime. In Journal of Crystal Growth Vol. 272 (pp. 719-725). Lahaina, HI: ELSEVIER.
Scopus9 WoS92003 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2003). Temperature sensitivity of 1360 nm InGaAsN quantum well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 1 (pp. 41-42). TUCSON, AZ: IEEE.
WoS12003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Carrier confinement in 1300-nm InGaAsN quantum-well lasers. In OSA Trends in Optics and Photonics Series Vol. 88 (pp. 526-527). 2003 Tansu, N., Mawst, L. J., Vurgaftman, I., & Meyer, J. R. (2003). GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 1 (pp. 37-38). TUCSON, AZ: IEEE. 2003 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2003). Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 269-272). SANTA BARBARA, CA: IEEE.
Scopus22003 Mawst, L. J., Tansu, N., & Yeh, J. Y. (2003). MOCVD-Grown InGaAsN Quantum-Well Lasers. In C. F. Gmachi, & D. P. Bour (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 4995 (pp. 39-53). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Carrier Confinement in 1300-nm InGaAsN Quantum-Well Lasers. In Optics InfoBase Conference Papers. 2002 Tansu, N., & Mawst, L. J. (2002). High performance 1300-nm dilute-nitride quantum well lasers by MOCVD. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 33-34). 2002 Tansu, N., & Mawst, L. J. (2002). Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ>1.17 μm) quantum well lasers. In P. Blood, M. Osinski, & Y. Arakawa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 4646 (pp. 302-312). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING.
Scopus22002 Tansu, N., & Mawst, L. J. (2002). Temperature Sensitivity Analysis of High-performance InGaAs(N) (λ = 1.185 - 1.3 μm) Quantum Well Lasers. In Optics InfoBase Conference Papers (pp. 269). 2001 Zhou, D., Lee, T. W., Tansu, N., Hagness, S., & Mawst, L. J. (2001). Large spot-size narrow waveguide VCSEL. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 469-470). SAN DIEGO, CA: IEEE. 2001 Tansu, N., & Mawst, L. J. (2001). InGaAs/GaAsP/InGaP strain compensated quantum well (λ=1.17 μm) diode lasers on GaAs. In L. J. Maust, & R. U. Martinelli (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 4287 (pp. 188-194). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING.
2001 Tansu, N., Chang, Y. L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R. T., & Mawst, L. J. (2001). Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (λ>1.17μm) quantum well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 1 (pp. 336-337). 2000 Tansu, N., & Mawst, L. J. (2000). Compressively-strained InGaAsP-active (λ=0.85μm) VCSELs. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 724-725).
Scopus121999 Tansu, N., Zhou, D., Rusli, S., & Mawst, L. J. (1999). Compressively-strained InGaAsP-active (λ = 0.78-0.85 μm) regions for VCSELs. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 397-398).
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Conference Items
Year Citation 2017 Zeng, G., Yang, X., Koel, B., Borovac, D., Tan, C. K., Tansu, N., & Krick, B. (2017). Tribochemistry of GaN, a suprisingly wear resistant semiconductor. Poster session presented at the meeting of ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY. San Francisco, CA: AMER CHEMICAL SOC.
Professor Nelson Tansu starts at The University of Adelaide in January 2021. Before this, he was a professor at Lehigh University (USA). He had received US$ 13.92 million funding to support his research works on the material synthesis, device physics, and computational nanostructures from the US National Science Foundation, US Department of Defense, US Department of Energy, and US Department of Education.
Courses Taught at The University of Adelaide [January 2021 - Present]
- To be determined.
Courses Taught at Lehigh University (Bethlehem, Pennsylvania, USA) [July 2020 - January 2021]
- Fall 2003: ECE 450-16 “Physics and Applications of Photonic Crystals”
- Spring 2004: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
- Fall 2004: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Fall 2004: ECE 257 “Senior Design Projects” (for senior undergraduate students).
- Spring 2005: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
- Spring 2005: ECE 258 “Senior Design Projects”
- Fall 2005: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Spring 2006: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2006: ECE 202 “Introduction to Engineering Electromagnetic”
- Fall 2006: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Fall 2006: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
- Spring 2007: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2007: ECE 450-017 “Nitride Semiconductor Device Physics”
- Spring 2008: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2008: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Spring 2009: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2009: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Spring 2010: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2010: ECE 350/450 “Applied Quantum Mechanics for Engineers”
- Fall 2010: ECE 451 “Semiconductor Physics and Devices”
- Spring 2011: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2011: ECE 451 “Semiconductor Physics and Devices”
- Spring 2012: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2012: ECE 451 “Semiconductor Physics and Devices”
- Spring 2013: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2013: ECE 451 “Semiconductor Physics and Devices”
- Spring 2014: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2014: ECE 350/450 “Applied Quantum Mechanics for Engineers”
- Spring 2015: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2015: ECE 451 “Semiconductor Physics and Devices”
- Spring 2016: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2016: ECE 451 “Semiconductor Physics and Devices”
- Winter 2016: ECE 450 “Engineering Teaching & Research Methods”
- Spring 2017: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2017: ECE 451 “Semiconductor Physics and Devices”
- Spring 2018: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2018: ECE 350/450 “Applied Quantum Mechanics for Engineers”
- Spring 2019: ECE 402 “Advanced Engineering Electromagnetics”
- Fall 2019: ECE 451 “Semiconductor Physics and Devices”
- Spring 2020: ECE 402 “Advanced Engineering Electromagnetics”
- Fall 2020: ECE 350/450 “Applied Quantum Mechanics for Engineers”
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Current Higher Degree by Research Supervision (University of Adelaide)
Date Role Research Topic Program Degree Type Student Load Student Name 2023 Principal Supervisor Ultra Low Energy Devices for Indoor Positioning with Data Transmission Capability Doctor of Philosophy Doctorate Full Time Mr Congyu Song 2023 Co-Supervisor Regenerative medicine for gynaecological scarring: efficacy of combination treatment of fractional CO2 laser and platelet-rich plasma treatment. Doctor of Philosophy Doctorate Part Time Ms Nadia Willison 2023 Co-Supervisor One-step procedure to engineer tissue growth using platelet-rich plasma (PRP) Doctor of Philosophy Doctorate Part Time Mr Tran Tuyet Thi Nguyen 2022 Co-Supervisor Biomechanical Analysis of Diseased Coronary Arteries Doctor of Philosophy Doctorate Full Time Mr Yaofeng Ju 2022 Co-Supervisor Nonlinear Biomechanics of Carotid Arteries Doctor of Philosophy Doctorate Full Time Miss Hiu Yan Mok 2022 Co-Supervisor Development of Laser Diodes Doctor of Philosophy Doctorate Part Time Mr Jamie Alexander McInnes 2021 Co-Supervisor Solar panel structural optimization for maximum PV power conversion efficiency Doctor of Philosophy Doctorate Full Time Mr Wing Kong Ng 2021 Co-Supervisor iPhD Project: Upscaling Atomic Layer Etching from the Bench to Full Fabrication Doctor of Philosophy Doctorate Full Time Miss Xiting Zhou
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