Nelson Tansu

Nelson Tansu

School of Electrical and Electronic Engineering

Faculty of Engineering, Computer and Mathematical Sciences


Prof. Nelson Tansu is a Fellow of the US National Academy of Inventors (NAI Fellow; elected in 2016), IEEE Fellow (elevated in 2021), and Clarivate Analytics Highly Cited Researcher (in 2018). Since January 2021, Tansu is the Head of the School of Electrical and Electronics Engineering (EEE) and Professor of Quantum Electronics at The University of Adelaide (Adelaide, South Australia, Australia). From July 2003 until January 2021, Tansu was a faculty member at Lehigh University, where he was the Daniel E. '39 and Patricia M. Smith Endowed Chair Professor in the Department of Electrical and Computer Engineering (ECE), and Director for the Center for Photonics and Nanoelectronics (CPN) at Lehigh University in the United States. His research interests include the materials, devices, computational sciences, and integrated technologies based on semiconductors for sustainability, biomedical sciences, power electronics, and quantum materials.

Selected keywords for Tansu's research areas include:
photonics, nanoelectronics, quantum devices, semiconductor lasers, VCSELs, III-nitride semiconductors, GaN semiconductors, III-V and III-V-nitrides, III-oxide technologies, LED technologies, MOCVD, Epitaxy, MBE, power electronics, integrated technologies, biomedical devices and systems, computational sciences for nanoscales, machine learning / AI, and quantum materials.

My research focuses on the physics, materials, devices, and integrated technologies based on wide bandgap (III-nitride and oxide-based) semiconductors and 2D materials for photonics, sustainability, health sciences, and computing/communications. My past works had resulted in seminal contributions in III-nitride (AlInGaN and InGaAsN) semiconductor materials and devices with impacts on communications, solid-state lighting, power electronics, energy efficiency, and renewable energy technologies. My future directions include i) the integration of the III-nitride semiconductors, oxide semiconductors, and 2D materials for new technologies enabled by such hybrid integration, and the pursuit of integrated technologies for biomedical and quantum computing applications, and ii) the use of machine learning for driving discoveries and innovations in basic material sciences and device technologies.

‪Nelson Tansu‬ - ‪Google Scholar‬

 

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  • Journals

    Year Citation
    2020 Junaid, M., Khir, M. H. M., Witjaksono, G., Tansu, N., Saheed, M. S. M., Kumar, P., . . . Usman, F. (2020). Boron-doped reduced graphene oxide with tunable bandgap and enhanced surface plasmon resonance. Molecules, 25(16), 19 pages.
    DOI Scopus1 WoS1
    2020 Borovac, D., Sun, W., Peart, M. R., Song, R., Wierer, J. J., & Tansu, N. (2020). Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy. Journal of Crystal Growth, 548, 5 pages.
    DOI Scopus1 WoS1
    2020 Klrll, E. A., Turegun, F. A., Selcuk, B., Gultekin, M. H., Tansu, N., Erozenci, A., & Onal, B. (2020). Does Previous Open Stone Surgery Affect the Outcome of Shock Wave Lithotripsy Treatment in Children?. Urologia Internationalis, 105(1-2), 52-58.
    DOI
    2020 Junaid, M., Khir, M. H. M., Witjaksono, G., Ullah, Z., Tansu, N., Mohamed Saheed, M. S., . . . Siddiqui, M. A. (2020). A review on graphene-based light emitting functional devices. Molecules, 25(18), 32 pages.
    DOI
    2020 Peart, M. R., Borovac, D., Sun, W., Song, R., Tansu, N., & Wierer, J. J. (2020). AlInN/GaN diodes for power electronic devices. Applied Physics Express, 13(9), 4 pages.
    DOI
    2020 Ogidi-Ekoko, O. N., Goodrich, J. C., Howzen, A. J., Peart, M. R., Strandwitz, N. C., Wierer, J. J., & Tansu, N. (2020). Electrical properties of MgO/GaN metal-oxide-semiconductor structures. Solid-State Electronics, 172, 7 pages.
    DOI Scopus1
    2020 Ogidi-Ekoko, O. N., Liang, W., Xue, H., & Tansu, N. (2020). Machine Learning Inspired Design of Complex-Shaped GaN Subwavelength Grating Reflectors. IEEE Photonics Journal, 13(1), 1-13.
    DOI
    2020 Mawst, L. J., Kim, H., Smith, G., Sun, W., & Tansu, N. (2020). Strained-layer quantum well materials grown by MOCVD for diode laser application. Progress in Quantum Electronics, 100303.
    DOI
    2020 Fu, H., Goodrich, J. C., & Tansu, N. (2020). Band alignment of ScAlN/GaN heterojunction. APPLIED PHYSICS LETTERS, 117(23), 4 pages.
    DOI
    2020 Liu, C. -Y., Huang, H. -C., Choi, W., Kim, J., Jung, K., Sun, W., . . . Li, X. (2020). Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy. ACS APPLIED ELECTRONIC MATERIALS, 2(2), 419-425.
    DOI
    2020 Al Muyeed, S. A., Wei, X., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2020). Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates. Journal of Crystal Growth, 540, 6 pages.
    DOI
    2020 Ullah, Z., Witjaksono, G., Nawi, I., Tansu, N., Khattak, M. I., & Junaid, M. (2020). A review on the development of tunable graphene nanoantennas for terahertz optoelectronic and plasmonic applications. Sensors (Switzerland), 20(5), 65 pages.
    DOI Scopus9 WoS7 Europe PMC3
    2020 Goodrich, J. C., Farinha, T. G., Ju, L., Howzen, A. J., Kundu, A., Ogidi-Ekoko, O. N., . . . Strandwitz, N. C. (2020). Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition. Journal of Crystal Growth, 536, 5 pages.
    DOI Scopus1 WoS1
    2020 Borovac, D., Sun, W., Tan, C. K., & Tansu, N. (2020). Electronic properties of dilute-As InGaNAs alloys: A first-principles study. Journal of Applied Physics, 127(1), 6 pages.
    DOI
    2020 Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2020). On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE. Journal of Crystal Growth, 533, 8 pages.
    DOI Scopus3 WoS3
    2020 Ullah, Z., Nawi, I., Witjaksono, G., Tansu, N., Khattak, M. I., Junaid, M., . . . Magsi, S. A. (2020). Dynamic absorption enhancement and equivalent resonant circuit modeling of tunable graphene-metal hybrid antenna. Sensors (Switzerland), 20(11), 34 pages.
    DOI Scopus2 WoS2 Europe PMC1
    2020 Sun, W., Kim, H., Mawst, L. J., & Tansu, N. (2020). Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness. Journal of Crystal Growth, 531, 6 pages.
    DOI Scopus1
    2019 Fu, H., Goodrich, J. C., Ogidi-Ekoko, O., & Tansu, N. (2019). Type-II AlInN/ZnGeN<inf>2</inf> quantum wells for ultraviolet laser diodes. Journal of Applied Physics, 126(13), 5 pages.
    DOI Scopus2 WoS2
    2019 Wierer, J. J., & Tansu, N. (2019). III-Nitride Micro-LEDs for Efficient Emissive Displays. Laser and Photonics Reviews, 13(9), 15 pages.
    DOI Scopus15 WoS12
    2019 Al Muyeed, S. A., Sun, W., Peart, M. R., Lentz, R. M., Wei, X., Borovac, D., . . . Wierer, J. J. (2019). Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers. Journal of Applied Physics, 126(21), 7 pages.
    DOI Scopus2 WoS1
    2019 Fu, H., Sun, W., Ogidi-Ekoko, O., Goodrich, J. C., & Tansu, N. (2019). Gain characteristics of InGaN quantum wells with AlGaInN barriers. AIP Advances, 9(4), 7 pages.
    DOI WoS1
    2019 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2019). Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports, 9(1), 8 pages.
    DOI Scopus1 WoS3
    2019 Peart, M. R., Wei, X., Borovac, D., Sun, W., Tansu, N., & Wierer, J. J. (2019). Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices. ACS APPLIED ELECTRONIC MATERIALS, 1(8), 1367-1371.
    DOI WoS3
    2018 Sun, W., Tan, C. K., Wierer, J. J., & Tansu, N. (2018). Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports, 8(1), 7 pages.
    DOI Scopus5 WoS4
    2018 Zeng, G., Sun, W., Song, R., Tansu, N., & Krick, B. A. (2018). Erratum: Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear (Scientific reports (2017) 7 1 (14126)). Scientific reports, 8(1), 2580.
    DOI
    2018 Wei, X., Al Muyeed, S. A., Peart, M. R., Sun, W., Tansu, N., & Wierer, J. J. (2018). Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching. Applied Physics Letters, 113(12), 4 pages.
    DOI Scopus5 WoS4
    2018 Fragkos, I. E., & Tansu, N. (2018). Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides. Scientific Reports, 8(1), 7 pages.
    DOI Scopus7 WoS5
    2018 Peart, M. R., Tansu, N., & Wierer, J. J. (2018). AlInN for Vertical Power Electronic Devices. IEEE Transactions on Electron Devices, 65(10), 4276-4281.
    DOI Scopus7 WoS5
    2018 Borovac, D., Tan, C. K., & Tansu, N. (2018). First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor. AIP Advances, 8(8), 8 pages.
    DOI
    2018 Zeng, G., Yang, X., Tan, C. K., Marvel, C. J., Koel, B. E., Tansu, N., & Krick, B. A. (2018). Shear-Induced Changes of Electronic Properties in Gallium Nitride. ACS Applied Materials and Interfaces, 10(34), 29048-29057.
    DOI Scopus1 WoS1 Europe PMC1
    2018 Sun, W., Al Muyeed, S. A., Song, R., Wierer, J. J., & Tansu, N. (2018). Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission. Applied Physics Letters, 112(20), 5 pages.
    DOI Scopus17 WoS17
    2018 Zeng, G., Tansu, N., & Krick, B. A. (2018). Moisture dependent wear mechanisms of gallium nitride. Tribology International, 118, 120-127.
    DOI Scopus9 WoS8
    2018 Borovac, D., Tan, C. K., & Tansu, N. (2018). First-Principle Study of the Optical Properties of Dilute-P GaN<inf>1-x</inf>P<inf>x</inf> Alloys. Scientific Reports, 8(1), 9 pages.
    DOI Scopus2 WoS3
    2017 Sun, W., Tan, C. K., & Tansu, N. (2017). AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports, 7(1), 8 pages.
    DOI Scopus12 WoS12 Europe PMC1
    2017 Huang, Y., Badar, M., Nitkowski, A., Weinroth, A., Tansu, N., & Zhou, C. (2017). Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device. Biomedical Optics Express, 8(8), 3856-3867.
    DOI Scopus13 WoS7 Europe PMC2
    2017 Sun, W., Tan, C. K., & Tansu, N. (2017). III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports, 7(1), 8 pages.
    DOI Scopus16 WoS22 Europe PMC2
    2017 Zeng, G., Yang, X., Skinner, C. H., Koel, B. E., Tansu, N., & Krick, B. A. (2017). Controlling factors of GaN wear. Tribology and Lubrication Technology, 73(3), 22-28.
    Scopus4 WoS3
    2017 Tan, C. K., Sun, W., Wierer, J. J., & Tansu, N. (2017). Effect of interface roughness on Auger recombination in semiconductor quantum wells. AIP Advances, 7(3), 8 pages.
    DOI Scopus8 WoS8
    2017 Borovac, D., Tan, C. K., & Tansu, N. (2017). Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports, 7(1), 8 pages.
    DOI Scopus4 WoS3
    2017 Gültekin, M. H., Türegün, F. A., Ozkan, B., Tülü, B., Güleç, G. G., Tansu, N., . . . Önal, B. (2017). Does Previous Open Renal Stone Surgery Affect the Outcome of Extracorporeal Shockwave Lithotripsy Treatment in Adults with Renal Stones?. Journal of Endourology, 31(12), 1295-1300.
    DOI Scopus2 WoS2 Europe PMC1
    2017 Fragkos, I. E., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes. Scientific Reports, 7(1), 12 pages.
    DOI Scopus6 WoS5 Europe PMC2
    2017 Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports, 7(1), 13 pages.
    DOI Scopus6 WoS9
    2017 Zeng, G., Sun, W., Song, R., Tansu, N., & Krick, B. A. (2017). Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports, 7(1), 6 pages.
    DOI Scopus5 WoS5 Europe PMC1
    2017 Al Muyeed, S. A., Sun, W., Wei, X., Song, R., Koleske, D. D., Tansu, N., & Wierer, J. J. (2017). Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers. AIP Advances, 7(10), 7 pages.
    DOI Scopus23 WoS15
    2016 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). First-Principle Electronic Properties of Dilute-P GaN 1-x P x Alloy for Visible Light Emitters. Scientific Reports, 6(1), 9 pages.
    DOI Scopus12 WoS11 Europe PMC1
    2016 Zhu, P., Zhu, H., Qin, W., Dantas, B. H., Sun, W., Tan, C. K., & Tansu, N. (2016). Narrow-linewidth red-emission Eu<sup>3+</sup>-doped TiO<inf>2</inf> spheres for light-emitting diodes. Journal of Applied Physics, 119(12), 8 pages.
    DOI Scopus19 WoS16
    2016 Tan, C. K., Sun, W., Borovac, D., & Tansu, N. (2016). Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports, 6(1), 7 pages.
    DOI Scopus18 WoS15 Europe PMC2
    2016 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). Dilute-As AlNAs alloy for deep-ultraviolet emitter. Scientific Reports, 6(1), 7 pages.
    DOI Scopus4 WoS5 Europe PMC1
    2016 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports, 6(1), 6 pages.
    DOI Scopus26 WoS26 Europe PMC3
    2016 Zeng, G., Tan, C. K., Tansu, N., & Krick, B. A. (2016). Ultralow wear of gallium nitride. Applied Physics Letters, 109(5), 5 pages.
    DOI Scopus24 WoS24
    2016 Wierer, J. J., Tansu, N., Fischer, A. J., & Tsao, J. Y. (2016). III-nitride quantum dots for ultra-efficient solid-state lighting. Laser and Photonics Reviews, 10(4), 612-622.
    DOI Scopus19 WoS18
    2015 Tan, C. K., & Tansu, N. (2015). Auger recombination rates in dilute-As GaNAs semiconductor. AIP Advances, 5(5), 7 pages.
    DOI Scopus23 WoS21
    2015 Jagota, M., & Tansu, N. (2015). Conductivity of nanowire arrays under random and ordered orientation configurations. Scientific Reports, 5(1), 5 pages.
    DOI Scopus38 WoS35 Europe PMC6
    2015 Tan, C. K., & Tansu, N. (2015). Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology, 10(2), 107-109.
    DOI Scopus54 WoS53 Europe PMC10
    2015 Tan, C. K., & Tansu, N. (2015). First-principle natural band alignment of GaN / dilute-As GaNAs alloy. AIP Advances, 5(1), 8 pages.
    DOI Scopus20 WoS11
    2015 Tansu, N., & So, F. (2015). Special Section Guest Editorial:Solid-State Lighting: Photonics and Technologies. Journal of Photonics for Energy, 5(1), 057601.
    DOI
    2015 Kafafi, Z. H., Martín-Palma, R. J., Nogueira, A. F., O'Carroll, D. M., Pietron, J. J., Samuel, I. D. W., . . . Tsakalakos, L. (2015). The role of photonics in energy. Journal of Photonics for Energy, 5(1), 44 pages.
    DOI Scopus7 WoS7
    2015 Ozkan, B., Dogan, C., Can, G. E., Tansu, N., Erozencı, A., & Onal, B. (2015). Does ureteral stenting matter for stone size? A retrospectıve analyses of 1361 extracorporeal shock wave lithotripsy patients. Central European Journal of Urology, 68(3), 358-364.
    DOI Scopus4 Europe PMC1
    2015 Zhu, P., & Tansu, N. (2015). Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays. Applied Optics, 54(20), 6305-6312.
    DOI Scopus22 WoS20 Europe PMC4
    2015 Zhu, P., & Tansu, N. (2015). Effect of packing density and packing geometry on light extraction of iii-nitride light-emitting diodes with microsphere arrays. Photonics Research, 3(4), 184-191.
    DOI Scopus27 WoS28
    2015 Zhu, P., Tan, C. -K., Sun, W., & Tansu, N. (2015). Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. APPLIED OPTICS, 54(34), 10299-10303.
    DOI WoS11 Europe PMC2
    2015 Tansu, N., & So, F. (2015). Solid-State Lighting: Photonics and Technologies. JOURNAL OF PHOTONICS FOR ENERGY, 5, 1 page.
    2014 Tansu, N. (2014). Photonics-advances in fundamental sciences and engineering technologies of light. Photonics, 1(1), 1-8.
    DOI Scopus1
    2014 Horng, R. H., Lau, K. M., Kuo, H. C., & Tansu, N. (2014). Solid-state lighting with high brightness, high efficiency, and low cost. International Journal of Photoenergy, 2014, 3 pages.
    DOI
    2013 Banerjee, P. P., Evans, D. R., Lee, W., Reshetnyak, V. Y., & Tansu, N. (2013). Hybrid organic-inorganic materials for novel photonic applications. Applied Optics, 52(22), HM1-HM3.
    DOI Scopus2 WoS2
    2013 Onal, B., Citgez, S., Tansu, N., Emin, G., Demirkesen, O., Talat, Z., . . . Erozenci, A. (2013). What changed in the management of pediatric stones after the introduction of minimally invasive procedures? A single-center experience over 24 years. Journal of Pediatric Urology, 9(6 PART A), 910-914.
    DOI Scopus20 WoS17 Europe PMC12
    2013 Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2013). Predictive factors and management of steinstrasse after shock wave lithotripsy in pediatric urolithiasis-a multivariate analysis study. Journal of Endourology, 27(2), 126.
    2013 Zhang, J., & Tansu, N. (2013). Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. IEEE Photonics Journal, 5(2), 11 pages.
    DOI Scopus70 WoS85
    2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 19(1), 6-11.
    DOI Scopus4 WoS7
    2013 Onal, B., Tansu, N., Demirkesen, O., Yalcin, V., Huang, L., Nguyen, H. T., . . . Erozenci, A. (2013). Nomogram and scoring system for predicting stone-free status after extracorporeal shock wave lithotripsy in children with urolithiasis. BJU International, 111(2), 344-352.
    DOI Scopus28 WoS18 Europe PMC12
    2013 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Investigation of large Stark shifts in InGaN/GaN multiple quantum wells. Journal of Applied Physics, 113(3), 5 pages.
    DOI Scopus14 WoS16
    2013 Banerjee, P. P., Evans, D. R., Lee, W., Reshetnyak, V. Y., & Tansu, N. (2013). Hybrid organic-inorganic materials for photonic applications. Optical Materials Express, 3(8), 1149-1151.
    DOI Scopus2 WoS1
    2013 Zhang, J., & Tansu, N. (2013). Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers. IEEE Photonics Journal, 5(2), 9 pages.
    DOI Scopus30 WoS30
    2013 Liu, G., Zhang, J., Tan, C. K., & Tansu, N. (2013). Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes. IEEE Photonics Journal, 5(2), 11 pages.
    DOI Scopus106 WoS132
    2013 Li, X. H., Zhu, P., Liu, G., Zhang, J., Song, R., Ee, Y. K., . . . Tansu, N. (2013). Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO<inf>2</inf> microsphere arrays. IEEE/OSA Journal of Display Technology, 9(5), 324-332.
    DOI Scopus80 WoS81
    2013 Zhao, H., Jiao, X., & Tansu, N. (2013). Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes. IEEE/OSA Journal of Display Technology, 9(4), 199-206.
    DOI Scopus8 WoS8
    2013 Zhu, P., Liu, G., Zhang, J., & Tansu, N. (2013). FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays. IEEE/OSA Journal of Display Technology, 9(5), 317-323.
    DOI Scopus93 WoS91
    2013 Zhao, H., Liu, G., Zhang, J., Arif, R. A., & Tansu, N. (2013). Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes. IEEE/OSA Journal of Display Technology, 9(4), 212-225.
    DOI Scopus149 WoS143
    2013 Tan, C. K., Zhang, J., Li, X. H., Liu, G., Tayo, B. O., & Tansu, N. (2013). First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters. IEEE/OSA Journal of Display Technology, 9(4), 272-279.
    DOI Scopus93 WoS90
    2013 Tansu, N., So, F., & Pei, Q. (2013). Guest editorial recent advances in solid state lighting. IEEE/OSA Journal of Display Technology, 9(4), 187-189.
    DOI Scopus1
    2012 Xu, L., Patel, D., Menoni, C. S., Pikal, J. M., Yeh, J. Y., Huang, J. Y. T., . . . Tansu, N. (2012). Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells. IEEE Photonics Journal, 4(6), 2382-2389.
    DOI Scopus8 WoS7
    2012 Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2012). Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well. IEEE Photonics Journal, 4(6), 2262-2271.
    DOI Scopus15 WoS16
    2012 Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2012). Predictive factors and management of steinstrasse after shock wave lithotripsy in pediatric urolithiasis - A multivariate analysis study. Urology, 80(5), 1127-1131.
    DOI Scopus11 WoS9 Europe PMC5
    2012 Koo, W. H., Youn, W., Zhu, P., Li, X. H., Tansu, N., & So, F. (2012). Light extraction of organic light emitting diodes by defective hexagonal-close-packed array. Advanced Functional Materials, 22(16), 3454-3459.
    DOI Scopus149 WoS144
    2012 Liu, G., Zhang, J., Li, X. H., Huang, G. S., Paskova, T., Evans, K. R., . . . Tansu, N. (2012). Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates. Journal of Crystal Growth, 340(1), 66-73.
    DOI Scopus45 WoS46
    2011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Efficient terahertz generation within InGaN/GaN multiple quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 17(1), 48-53.
    DOI Scopus26 WoS19
    2011 Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes. Applied Physics Letters, 98(15), 3 pages.
    DOI Scopus90 WoS92
    2011 Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. IEEE Journal of Quantum Electronics, 47(6), 870-877.
    DOI Scopus18
    2011 Liu, G., Zhao, H., Zhang, J., Park, J. H., Mawst, L. J., & Tansu, N. (2011). Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters, 6(1), 10 pages.
    DOI Scopus63 WoS63 Europe PMC12
    2011 Li, X. H., Song, R., Ee, Y. K., Kumnorkaew, P., Gilchrist, J. F., & Tansu, N. (2011). Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios. IEEE Photonics Journal, 3(3), 489-499.
    DOI Scopus180 WoS188
    2011 Zhao, H., Liu, G., Zhang, J., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2011). Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express, 19(104), A991-A1007.
    DOI Scopus493 WoS483 Europe PMC61
    2011 Zhang, J., Tong, H., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2011). Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents. Journal of Applied Physics, 109(5), 6 pages.
    DOI Scopus62 WoS56
    2011 Zhang, J., Zhao, H., & Tansu, N. (2011). Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes. Applied Physics Letters, 98(17), 3 pages.
    DOI Scopus119 WoS117
    2011 Zhang, J., Kutlu, S., Liu, G., & Tansu, N. (2011). High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 110(4), 6 pages.
    DOI Scopus41 WoS39
    2011 Zhang, J., & Tansu, N. (2011). Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes. Journal of Applied Physics, 110(11), 5 pages.
    DOI Scopus144 WoS135
    2011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of fast and slow decays in InGaN/GaN quantum wells. Applied Physics Letters, 99(8), 3 pages.
    DOI Scopus44 WoS40
    2010 Zhang, J., Zhao, H., & Tansu, N. (2010). Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters, 97(11), 3 pages.
    DOI Scopus148 WoS133
    2010 Tong, H., Zhang, J., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2010). Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition. Applied Physics Letters, 97(11), 3 pages.
    DOI Scopus70 WoS65
    2010 Zhao, H., Liu, G., & Tansu, N. (2010). Analysis of InGaN-delta-InN quantum wells for light-emitting diodes. Applied Physics Letters, 97(13), 3 pages.
    DOI Scopus166 WoS62
    2010 Zhao, H., & Tansu, N. (2010). Optical gain characteristics of staggered InGaN quantum wells lasers. Journal of Applied Physics, 107(11), 12 pages.
    DOI Scopus116 WoS92
    2010 Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire. Journal of Crystal Growth, 312(8), 1311-1315.
    DOI Scopus104 WoS103
    2010 Zhao, H., Liu, G., Arif, R. A., & Tansu, N. (2010). Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes. Solid-State Electronics, 54(10), 1119-1124.
    DOI Scopus198 WoS191
    2010 Tansu, N., Zhao, H., Liu, G., Li, X. H., Zhang, J., Tong, H., & Ee, Y. K. (2010). III-nitride photonics. IEEE Photonics Journal, 2(2), 241-248.
    DOI Scopus143 WoS140
    2010 Sun, G., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., Tansu, N., & Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. Applied Physics Letters, 97(2), 3 pages.
    DOI Scopus11 WoS11
    2010 Xu, G., Ding, Y. J., Zhao, H., Liu, G., Jamil, M., Tansu, N., . . . Speck, J. S. (2010). THz generation from InN films due to destructive interference between optical rectification and photocurrent surge. Semiconductor Science and Technology, 25(1), 5 pages.
    DOI Scopus25 WoS25
    2009 Zhao, H., Liu, G., Li, X. H., Huang, G. S., Poplawsky, J. D., Penn, S. T., . . . Tansu, N. (2009). Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile. Applied Physics Letters, 95(6), 3 pages.
    DOI Scopus172 WoS142
    2009 Ee, Y. K., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2009). Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1066-1072.
    DOI Scopus171 WoS163
    2009 Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Zhao, H., Gilchrist, J. F., & Tansu, N. (2009). Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1218-1225.
    DOI Scopus128 WoS124
    2009 Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Gilchrist, J. F., & Tansu, N. (2009). Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express, 17(16), 13747-13757.
    DOI Scopus127 WoS128 Europe PMC21
    2009 Tansu, N., Schubert, E. F., Kuo, H. C., & Smowton, P. M. (2009). Introduction to the issue on solid-state lighting. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1025-1027.
    DOI Scopus2 WoS2
    2009 Onal, B., Citgez, S., Tansu, N., Talat, Z., & Oner, A. (2009). Tablets of the potassium citrate may cause a stone-like image: A case report. Urological Research, 37(3), 165-168.
    DOI Scopus2 WoS2 Europe PMC2
    2009 Zhao, H., Arif, R. A., & Tansu, N. (2009). Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1104-1114.
    DOI Scopus146 WoS124
    2009 Zhao, H., Arif, R. A., Ee, Y. K., & Tansu, N. (2009). Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes. IEEE Journal of Quantum Electronics, 45(1), 66-78.
    DOI Scopus201 WoS189
    2008 Tripathy, S. K., Xu, G., Mu, X., Ding, Y. J., Jamil, M., Arif, R. A., . . . Khurgin, J. B. (2008). Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate. Applied Physics Letters, 93(20), 3 pages.
    DOI Scopus18 WoS15
    2008 Kumnorkaew, P., Ee, Y. K., Tansu, N., & Gilchrist, J. F. (2008). Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. Langmuir, 24(21), 12150-12157.
    DOI Scopus146 WoS139 Europe PMC22
    2008 Jamil, M., Zhao, H., Higgins, J. B., & Tansu, N. (2008). Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE. Journal of Crystal Growth, 310(23), 4947-4953.
    DOI Scopus44 WoS41
    2008 Jamil, M., Arif, R. A., Ee, Y. K., Tong, H., Higgins, J. B., & Tansu, N. (2008). MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates. Physica Status Solidi (A) Applications and Materials Science, 205(7), 1619-1624.
    DOI Scopus35 WoS35
    2008 Tsvid, G., Kirch, J., Mawst, L. J., Kanskar, M., Cai, J., Arif, R. A., . . . Blood, P. (2008). Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers. IEEE Journal of Quantum Electronics, 44(8), 732-739.
    DOI Scopus11 WoS7
    2008 Jamil, M., Zhao, H., Higgins, J. B., & Tansu, N. (2008). MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode. Physica Status Solidi (A) Applications and Materials Science, 205(12), 2886-2891.
    DOI Scopus35 WoS37
    2008 Mawst, L. J., Huang, J. Y. T., Xu, D. P., Yeh, J. Y., Tsvid, G., Kuech, T. F., & Tansu, N. (2008). MOCVD-grown dilute nitride type II quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 14(4), 979-991.
    DOI Scopus16 WoS15
    2008 Zhao, H., Arif, R. A., & Tansu, N. (2008). Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers. Journal of Applied Physics, 104(4), 7 pages.
    DOI Scopus114 WoS98
    2008 Ee, Y. K., Zhao, H., Arif, R. A., Jamil, M., & Tansu, N. (2008). Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 310(7-9), 2320-2325.
    DOI Scopus41 WoS39
    2008 Arif, R. A., Zhao, H., Ee, Y. K., & Tansu, N. (2008). Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes. IEEE Journal of Quantum Electronics, 44(6), 573-580.
    DOI Scopus120 WoS114
    2008 Sahinkanat, T., Ekerbicer, H., Onal, B., Tansu, N., Resim, S., Citgez, S., & Oner, A. (2008). Evaluation of the Effects of Relationships Between Main Spatial Lower Pole Calyceal Anatomic Factors on the Success of Shock-Wave Lithotripsy in Patients with Lower Pole Kidney Stones. Urology, 71(5), 801-805.
    DOI Scopus36 WoS28 Europe PMC16
    2008 Hsu, C. C., Lin, J. H., Chen, Y. S., Lin, Y. H., Kuo, H. C., Wang, S. C., . . . Mawst, L. J. (2008). Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells. Journal of Physics D: Applied Physics, 41(8), 6 pages.
    DOI Scopus3 WoS3
    2008 Arif, R. A., Zhao, H., & Tansu, N. (2008). Type-II InGaN-GaNAs quantum wells for lasers applications. Applied Physics Letters, 92(1), 3 pages.
    DOI Scopus102 WoS105
    2007 Arif, R. A., Ee, Y. K., & Tansu, N. (2007). Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Applied Physics Letters, 91(9), 3 pages.
    DOI Scopus273 WoS246
    2007 Ee, Y. K., Arif, R. A., Tansu, N., Kumnorkaew, P., & Gilchrist, J. F. (2007). Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays. Applied Physics Letters, 91(22), 3 pages.
    DOI Scopus146 WoS136
    2006 Anton, O., Xu, L. F., Patel, D., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., . . . Tansu, N. (2006). The intrinsic frequency response of 1.3-μm InGaAsN lasers in the range T = 10 °C-80 °C. IEEE Photonics Technology Letters, 18(16), 1774-1776.
    DOI Scopus12 WoS10
    2006 Yeh, J. Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., & Tansu, N. (2006). Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells. Applied Physics Letters, 88(5), 1-3.
    DOI Scopus24 WoS23
    2006 Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2006). Optical determination of the electron effective mass of strain compensated In <inf>0.4</inf>Ga <inf>0.6</inf>As <inf>0.995</inf>N <inf>0.005</inf>/GaAs single quantum well. Applied Physics Letters, 89(17), 3 pages.
    DOI Scopus15 WoS15
    2006 Demirkesen, O., Önal, B., Tansu, N., Altintaş, R., Yalçin, V., & Öner, A. (2006). Efficacy of extracorporeal shock wave lithotripsy for isolated lower caliceal stones in children compared with stones in other renal locations. Urology, 67(1), 170-174.
    DOI Scopus49 Europe PMC34
    2005 Tansu, N., & Mawst, L. J. (2005). Current injection efficiency of InGaAsN quantum-well lasers. Journal of Applied Physics, 97(5), 18 pages.
    DOI Scopus124 WoS123
    2005 Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., . . . Tansu, N. (2005). Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics, 98(12), 5 pages.
    DOI Scopus5 WoS5
    2005 Thränhardt, A., Kuznetsova, I., Schlichenmaier, C., Koch, S. W., Shterengas, L., Belenky, G., . . . Chow, W. W. (2005). Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory. Applied Physics Letters, 86(20), 1-3.
    DOI Scopus41 WoS37
    2005 Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters, 86(7), 1-3.
    DOI Scopus27 WoS24
    2005 Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers. IEEE Photonics Technology Letters, 17(9), 1779-1781.
    DOI Scopus8 WoS6
    2005 Lai, F. I., Kuo, H. C., Chang, Y. H., Tsai, M. Y., Chu, C. P., Kuo, S. Y., . . . Mawst, L. J. (2005). Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(8), 6204-6207.
    DOI Scopus4 WoS4
    2005 Anton, O., Menoni, C. S., Yeh, J. Y., Mawst, L. J., Pikal, J. M., & Tansu, N. (2005). Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements. IEEE Photonics Technology Letters, 17(5), 953-955.
    DOI Scopus12 WoS11
    2004 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2004). Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition. Journal of Physics Condensed Matter, 16(31), S3277-S3318.
    DOI Scopus61 WoS56
    2004 Tansu, N., Öbek, C., Önal, B., Yalçin, V., Öner, A., & Solok, V. (2004). A Simple Position to Provide Better Imaging of Upper Ureteral Stones Close to the Crista Iliaca during Extracorporeal Shock Wave Lithotripsy Using the Siemens Lithostar. European Urology, 45(3), 352-355.
    DOI Scopus2 Europe PMC2
    2004 Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2004). InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers. Journal of Applied Physics, 96(8), 4653-4655.
    DOI Scopus37 WoS34
    2004 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm. Electronics Letters, 40(12), 739-741.
    DOI Scopus19 WoS17
    2004 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well. Journal of Crystal Growth, 265(1-2), 1-7.
    DOI Scopus1 WoS2
    2004 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers. IEEE Photonics Technology Letters, 16(3), 741-743.
    DOI Scopus18 WoS19
    2004 Önal, B., Demirkesen, O., Tansu, N., Kalkan, M., Altintaş, R., & Yalçin, V. (2004). The impact of caliceal pelvic anatomy on stone clearance after shock wave lithotripsy for pediatric lower pole stones. Journal of Urology, 172(3), 1082-1086.
    DOI Scopus51 Europe PMC28
    2003 Kalkan, M., Önal, B., Demirkesen, O., Uzun, H., Tansu, N., & Yalçin, V. (2003). The efficacy of ESWL for pediatric ureteral stones. Turk Uroloji Dergisi, 29(2), 180-184.
    Scopus1
    2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition. IEEE Journal on Selected Topics in Quantum Electronics, 9(5), 1220-1227.
    DOI Scopus68 WoS65
    2003 Tansu, N., & Mawst, L. J. (2003). Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions. IEEE Journal of Quantum Electronics, 39(10), 1205-1210.
    DOI Scopus40 WoS36
    2003 Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2003). (In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm. Applied Physics Letters, 83(14), 2742-2744.
    DOI Scopus55 WoS54
    2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers. Applied Physics Letters, 83(13), 2512-2514.
    DOI Scopus84 WoS76
    2003 Tansu, N., Quandt, A., Kanskar, M., Mulhearn, W., & Mawst, L. J. (2003). High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy. Applied Physics Letters, 83(1), 18-20.
    DOI Scopus58 WoS57
    2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm. Applied Physics Letters, 82(23), 4038-4040.
    DOI Scopus71 WoS64
    2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing. Applied Physics Letters, 82(18), 3008-3010.
    DOI Scopus23 WoS23
    2003 Tansu, N., & Mawst, L. J. (2003). The role of hole leakage in 1300-nm InGaAsN quantum-well lasers. Applied Physics Letters, 82(10), 1500-1502.
    DOI Scopus72 WoS64
    2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Experimental evidence of carrier leakage in InGaAsN quantum-well lasers. Applied Physics Letters, 83(11), 2112-2114.
    DOI Scopus71 WoS64
    2002 Tansu, N., & Mawst, L. J. (2002). Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers. IEEE Photonics Technology Letters, 14(8), 1052-1054.
    DOI Scopus59 WoS58
    2002 Tansu, N., Kirsch, N. J., & Mawst, L. J. (2002). Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers. Applied Physics Letters, 81(14), 2523-2525.
    DOI Scopus161 WoS146
    2002 Tansu, N., & Mawst, L. J. (2002). Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers. IEEE Photonics Technology Letters, 14(4), 444-446.
    DOI Scopus109 WoS102
    2002 Tansu, N. (2002). Nitrogen lowers threshold current in quantum-well lasers. LASER FOCUS WORLD, 38(12), 9.
    2002 Tansu, N., Chang, Y. L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R. T., & Mawst, L. J. (2002). Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ &gt; 1.17 μm) quantum-well lasers. IEEE Journal of Quantum Electronics, 38(6), 640-651.
    DOI Scopus50 WoS43
    2001 Tansu, N., & Mawst, L. J. (2001). High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers. IEEE Photonics Technology Letters, 13(3), 179-181.
    DOI Scopus81 WoS73
    2001 Demirkesen, O., Yaycioglu, O., Onal, B., Kalkan, M., Tansu, N., Yalcin, V., . . . Solok, V. (2001). Extracorporeal shockwave lithotripsy for stones in abnormal urinary tracts: Analysis of results and comparison with normal urinary tracts. Journal of Endourology, 15(7), 681-685.
    DOI Scopus15
    2001 Öbek, C., Önal, B., Kantay, K., Kalkan, M., Yalçin, V., Öner, A., . . . Tansu, N. (2001). The efficacy of extracorporeal shock wave lithotripsy for isolated lower pole calculi compared with isolated middle and upper caliceal calculi. Journal of Urology, 166(6), 2081-2085.
    DOI Scopus77 Europe PMC51
    2000 Tansu, N., Zhou, D., & Mawst, L. J. (2000). Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 μm) region diode lasers. IEEE Photonics Technology Letters, 12(6), 603-605.
    DOI Scopus19 WoS20
    1999 Demirkesen, O., Tansu, N., Yaycioglu, O., Onal, B., Yalcin, V., & Solok, V. (1999). Extracorporeal shockwave lithotripsy in the pediatric population. Journal of Endourology, 13(3), 147-150.
    DOI Scopus39 Europe PMC25
  • Book Chapters

    Year Citation
    2016 Meyyappan, M., Pelesko, J., Giurgiutiu, V., Lyshevski, S. E., Tansu, N., Arif, R., & Jin, Z. (2016). Materials and nanoscience. In Sensors, Nanoscience, Biomedical Engineering, and Instruments.
    2011 Mawst, L. J., & Tansu, N. (2011). Quantum-Well Lasers and Their Applications. In Comprehensive Semiconductor Science and Technology (Vol. 1-6, pp. 626-682). Elsevier.
    DOI Scopus2
    2008 Arif, R. A., & Tansu, N. (2008). Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers. In Springer Series in Materials Science (Vol. 105, pp. 503-524). Springer Berlin Heidelberg.
    DOI Scopus1
    2008 Tansu, N., & Mawst, L. J. (2008). Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition. In Springer Series in Materials Science (Vol. 105, pp. 449-501). Springer Berlin Heidelberg.
    DOI Scopus1
  • Conference Papers

    Year Citation
    2020 Witjaksono, G., Ullah, Z., Nawi, I. B., Tansu, N., Khattak, M. I., & Junaid, M. (2020). Absorption Enhancement of Tunable Terahertz Hybrid Graphene-Metal Antenna with Stacked Graphene configuration. In 2020 IEEE 8th International Conference on Photonics, ICP 2020 (pp. 15-17). IEEE.
    DOI
    2020 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2020). P-type Doping of Dilute-Anion III-Nitride Materials. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings. IEEE.
    DOI
    2020 Fu, H., Goodrich, J. C., & Tansu, N. (2020). Band Alignment of Nearly Lattice-Matched ScAlN/GaN Heterojunction. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings. IEEE.
    DOI
    2020 Ogidi-Ekoko, O. N., Liang, W., Xue, H., & Tansu, N. (2020). GaN Subwavelength Gratings by Machine Learning Design. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings. IEEE.
    DOI
    2019 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2019). Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings (pp. 2 pages). San Antonio, TX: IEEE.
    DOI
    2019 Fu, H., Goodrich, J. C., & Tansu, N. (2019). Gain Properties of Type-II AlInN / ZnGeN<inf>2</inf> Quantum Wells for Ultraviolet Laser Diodes. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings (pp. 2 pages). San Antonio, TX: IEEE.
    DOI
    2018 Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2018). Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Fragkos, I. E., Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2018). Experimental Studies of Delta-InN Incorporation in InGaN Quantum Well for Long Wavelength Emission. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Borovac, D., Sun, W., Tan, C. K., & Tansu, N. (2018). Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Fu, H., Sun, W., Ogidi-Ekoko, O., & Tansu, N. (2018). Gain Properties of InGaN Quantum Wells with AlGaInN Barriers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Wei, X., Muyeed, S. A. A., Peart, M., Tansu, N., & Wierer, J. J. (2018). Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Sun, W., Kim, H., Mawst, L. J., & Tansu, N. (2018). Interplay of Strain Compensation and Relaxation in High-Performance InGaAs Quantum Well Lasers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Fragkos, I. E., & Tansu, N. (2018). Titanium Nitride Surface Plasmon Coupling for Enhanced IQE in GaN:Eu Red Light Emitters. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2018 Muyeed, S. A. A., Sun, W., Wei, X., Song, R., Koleske, D., Tansu, N., & Wierer, J. J. (2018). Improvement in the Radiative Efficiency of InGaN-Based Multiple Quantum Wells using AlGaN Interlayers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Reston, VA: IEEE.
    DOI
    2017 Reid, E. T., & Tansu, N. (2017). Analysis of integrated tunable III-nitride lasers with dual distributed Bragg reflectors. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 167-168). Orlando, FL: IEEE.
    DOI
    2017 Borovac, D., Tan, C. K., & Tansu, N. (2017). Investigation of refractive index in dilute-P GaNP alloys by first-principle. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 257-258). Orlando, FL: IEEE.
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    2017 Sun, W., Tan, C. K., & Tansu, N. (2017). Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 255-256). Orlando, FL: IEEE.
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    2017 Slosberg, A. M., & Tansu, N. (2017). Design analysis of subwavelength grating mirror for GaN based VCSELs structure. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 231-232). Orlando, FL: IEEE.
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    2017 Tansu, N. (2017). High efficiency III-Nitride LEDs. In Optics InfoBase Conference Papers Vol. Part F72-SSL 2017. OSA.
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    2017 Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2017). Dilute-anion boron nitride semiconductor for light emitters. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 59-60). Orlando, FL: IEEE.
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    2017 Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 275-276). Orlando, FL: IEEE.
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    2017 Tan, C. K., Sun, W., Borovac, D., Wierer, J. J., & Tansu, N. (2017). Dilute-Anion III-nitride: A potential visible light emitter. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 834-835). Waikoloa, HI: IEEE.
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    2017 Zeng, G., Yang, X., Koel, B., Borovac, D., Tan, C. K., Tansu, N., & Krick, B. (2017). Tribochemistry of GaN, a suprisingly wear resistant semiconductor. In ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY Vol. 253 (pp. 1 page). San Francisco, CA: AMER CHEMICAL SOC.
    2015 Tan, C. K., & Tansu, N. (2015). Dilute-As AlNAs semiconductor for ultraviolet emitters. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 521-522). Reston, VA: IEEE.
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    2015 Sun, W., Tan, C. K., & Tansu, N. (2015). Artificially-engineered InGaN-based digital alloy for optoelectronics. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 519-520). Reston, VA: IEEE.
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    2015 Tansu, N., Tan, C. K., & Wierer, J. J. (2015). Tutorial on III-Nitride solid state lighting and smart lighting. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 26-27). Reston, VA: IEEE.
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    2015 Tan, C. K., & Tansu, N. (2015). Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 577-578). Reston, VA: IEEE.
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    2014 Onal, B., Dogan, C., Ozkan, B., Tansu, N., Can, G. E., & Erozenci, A. (2014). THE USING OF STENT ACCORDING TO STONE BURDEN IN PELVIS RENALIS CALCULI TREATED WITH ESWL: USE IT OR NOT ?. In JOURNAL OF UROLOGY Vol. 191 (pp. E279). Orlando, FL: ELSEVIER SCIENCE INC.
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    2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 (pp. 2 pages). San Jose, CA: IEEE.
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    2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013.
    2013 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2013.
    2012 Zhao, H., Jiao, X., & Tansu, N. (2012). Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes. In Asia Communications and Photonics Conference, ACP. OSA.
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    2012 Zhu, P., Zhang, J., Liu, G., & Tansu, N. (2012). FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 433-434). Burlingame, CA: IEEE.
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    2012 Zhang, J., & Tansu, N. (2012). Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 604-605). Burlingame, CA: IEEE.
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    2012 Liu, G., Zhang, J., Tan, C. K., & Tansu, N. (2012). Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 431-432). Burlingame, CA: IEEE.
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    2012 Tan, C. K., Zhang, J., Li, X. H., Liu, G., & Tansu, N. (2012). Dilute-As GaNAs semiconductor for visible emitters. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 695-696). Burlingame, CA: IEEE.
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    2012 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012.
    2012 Liu, G., Zhang, J., Zhao, H., & Tansu, N. (2012). Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 8262 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2012 Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. 2 pages). San Jose, CA: IEEE.
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    2012 Tansu, N., Zhang, J., Liu, G., Zhao, H., Tan, C. K., & Zhu, P. (2012). Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes. In Asia Communications and Photonics Conference, ACP 2012. OSA.
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    2012 Zhang, J., Tong, H., Liu, G., & Tansu, N. (2012). III-nitride based thermoelectric - current status and future potential. In Asia Communications and Photonics Conference, ACP 2012. OSA.
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    2012 Koo, W., Yun, W., Zhu, P., Li, X. H., Tansu, N., & So, F. (2012). Light extraction of phosphorescent oleds by defective hexagonal-close-packed array. In Digest of Technical Papers - SID International Symposium Vol. 43 (pp. 1474-1476). Wiley.
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    2012 Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2012). PREDICTIVE FACTORS AND THE MANAGEMENT OF STEINSTRASSE AFTER SHOCK WAVE LITHOTRIPSY IN PEDIATRIC UROLITHIASIS-A MULTIVARIATE ANALYSIS STUDY. In JOURNAL OF ENDOUROLOGY Vol. 26 (pp. A344). MARY ANN LIEBERT INC.
    2012 Onal, B., Tansu, N., Demirkesen, O., Yalcin, V., Huang, L., Nguyen, H. T., . . . Erozenci, A. (2012). NOMOGRAM FOR PREDICTING STONE-FREE STATUS AFTER SHOCK WAVE LITHOTRIPSY IN CHILDREN WITH UROLITHIASIS. In JOURNAL OF ENDOUROLOGY Vol. 26 (pp. A343). MARY ANN LIEBERT INC.
    2012 Zhang, J., Zhao, H., & Tansu, N. (2012). Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers. In A. A. Belyanin, & P. M. Smowton (Eds.), NOVEL IN-PLANE SEMICONDUCTOR LASERS XI Vol. 8277 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
    2011 Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. OSA.
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    2011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. OSA.
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    2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
    2011 Cao, W., Biser, J. M., Ee, Y. K., Li, X. H., Tansu, N., Chan, H. M., & Vinci, R. P. (2011). Dislocation structure of GaN films grown on planar and nano-patterned sapphire. In Journal of Applied Physics Vol. 110 (pp. 4 pages). AMER INST PHYSICS.
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    2011 Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
    2011 Zhang, J., Zhao, H., & Tansu, N. (2011). Gain characteristics of deep UV AlGaN quantum wells lasers. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7953 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Vol. 47 (pp. 870-877). IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.
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    2011 Zhang, J., Tong, H., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2011). Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7939 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Zhang, J., Tong, H., Herbsommer, J. A., & Tansu, N. (2011). Analysis of thermoelectric properties of AlInN semiconductor alloys. In B. Witzigmann, F. Henneberger, Y. Arakawa, & A. Freundlich (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7933 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Zhao, H., Zhang, J., Liu, G., Toma, T., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2011). Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7939 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Tansu, N., Zhao, H., Zhang, J., Liu, G., Li, X. H., Ee, Y. K., . . . Huang, G. S. (2011). Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering. In K. P. Streubel, L. W. Tu, H. Jeon, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7954 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Liu, G., Zhao, H., Zhang, J., Park, J. H., Mawst, L. J., & Tansu, N. (2011). Selective area epitaxy of ultra-high density InGaN based quantum dots. In 2011 IEEE Winter Topicals, WTM 2011 (pp. 35-36). IEEE.
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    2011 Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
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    2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
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    2011 Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
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    2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-Delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
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    2011 Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
    2011 Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
    2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple Quantum Wells. In Optics InfoBase Conference Papers.
    2011 Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
    2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-Delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers.
    2011 Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE.
    2011 Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple quantum wells. In Optics InfoBase Conference Papers.
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    2011 Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-Polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers.
    2011 Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO<inf>2</inf> microsphere arrays. In K. P. Streubel, L. W. Tu, H. Jeon, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7954 (pp. 5 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2011 Tansu, N., Zhang, J., & Zhao, H. (2011). Physics of novel III-nitride gain media for visible and ultraviolet lasers. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 509-510). Arlington, VA: IEEE.
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    2011 Xu, L. F., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2011). Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 682-683). Arlington, VA: IEEE.
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    2010 Ee, Y. K., Li, X. H., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. OSA.
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    2010 Zhao, H., Liu, G., Ee, Y. K., Li, X. H., Tong, H., Zhang, J., . . . Tansu, N. (2010). Novel device concepts for high-efficiency InGaN-based light-emitting diodes. In J. I. Chyi, Y. Nanishi, H. Morkoc, C. W. Litton, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7602 (pp. 7 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2010 Ee, Y. K., Li, X. H., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
    2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
    2010 Zhao, H., Liu, G., Li, X. H., Ee, Y. K., Tong, H., Zhang, J., . . . Tansu, N. (2010). Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
    2010 Liu, G., Zhao, H., Park, J. H., Mawst, L. J., & Tansu, N. (2010). Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
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    2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Zhao, H., Huang, G. S., . . . Khurgin, J. B. (2010). Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE.
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    2010 Liu, G., Zhao, H., Hyung Park, J., Mawst, L. J., & Tansu, N. (2010). Growths of ultra high density InGaN-based quantum dots on self-assembled diblock copolymer nanopatterns. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010.
    2010 Zhang, J., Zhao, H., & Tansu, N. (2010). Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 63-64). Denver, CO: IEEE.
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    2010 Liu, G., Zhao, H., Zhang, J., Tong, H., Huang, G. S., & Tansu, N. (2010). Growths of lattice-matched AlInN / GaN for optoelectronics applications. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 534-535). Denver, CO: IEEE.
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    2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010.
    2010 Zhao, H., Liu, G., & Tansu, N. (2010). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. In K. P. Streubel, H. Joen, L. W. Tu, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7617 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2010 Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. In K. P. Streubel, H. Joen, L. W. Tu, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7617 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2010 Liu, G., Zhao, H., & Tansu, N. (2010). Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells. In B. Witzigmann, F. Henneberger, Y. Arakawa, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7597 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2010 Zhao, H., Zhang, J., Toma, T., Liu, G., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2010). Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 532-533). Denver, CO: IEEE.
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    2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Zhao, H., Huang, G. S., . . . Khurgin, J. B. (2010). Photoluminescence quenching due to relocation of electrons in GaN/AlN asymmetric-coupled quantum wells. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010.
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    2010 Li, X. H., Tong, H., Zhao, H., & Tansu, N. (2010). Band structure calculation of dilute-As GaNAs by first principle. In B. Witzigmann, F. Henneberger, Y. Arakawa, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7597 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2010 Tong, H., Zhang, J., Zhao, H., Liu, G., Handara, V. A., Herbsommer, J. A., & Tansu, N. (2010). Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method. In J. I. Chyi, Y. Nanishi, H. Morkoc, C. W. Litton, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7602 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2010 Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers. OSA.
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    2009 Ee, Y. K., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2009). Growths of InGaN quantum wells light-emitting diodes on nano-patterned AGOG sapphire substrate using abbreviated growth mode. In Optics InfoBase Conference Papers. OSA.
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    2009 Zhao, H., Liu, G., Li, X., Arif, R. A., Huang, G. S., Ee, Y. K., & Tansu, N. (2009). Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile. In Proceedings of SPIE - The International Society for Optical Engineering Vol. 7231.
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    2009 Zhao, H., Arif, R. A., & Tansu, N. (2009). Staggered InGaN quantum well diode lasers emitting at 500 nm. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7230 (pp. 7 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2009 Ee, Y. K., Kumnorkaew, P., Tong, H., Arif, R. A., Gilchrist, J. F., & Tansu, N. (2009). Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. In K. P. Streubel, H. Jeon, & L. W. Tu (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7231 (pp. 7 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2009 Zhao, H., Tong, H., Driscoll, A. M., Jamil, M., Huang, G. S., & Tansu, N. (2009). Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy. In H. Morkoc, C. W. Litton, J. I. Chyi, Y. Nanishi, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7216 (pp. 6 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING.
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    2009 Zhao, H. P., Liu, G. Y., Li, X. H., Arif, R. A., Huang, G. S., Poplawsky, J. D., . . . Tansu, N. (2009). Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime. In IET Optoelectronics Vol. 3 (pp. 283-295). Cardiff, WALES: INST ENGINEERING TECHNOLOGY-IET.
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    2004 Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). Carrier transport and injection efficiency of InGaAsN quantum-well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 693-694). Rio Grande, PR: IEEE.
    2004 Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2004). The 3dB bandwidth of strain-compensated dilute-nitride quantum-well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 697-698). Rio Grande, PR: IEEE.
    2004 Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime. In Journal of Crystal Growth Vol. 272 (pp. 719-725). Lahaina, HI: ELSEVIER.
    DOI Scopus9 WoS9
    2003 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2003). Temperature sensitivity of 1360 nm InGaAsN quantum well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 1 (pp. 41-42). TUCSON, AZ: IEEE.
    2003 Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Carrier confinement in 1300-nm InGaAsN quantum-well lasers. In OSA Trends in Optics and Photonics Series Vol. 88 (pp. 526-527).
    2003 Tansu, N., Mawst, L. J., Vurgaftman, I., & Meyer, J. R. (2003). GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 1 (pp. 37-38). TUCSON, AZ: IEEE.
    2003 Yeh, J. Y., Tansu, N., & Mawst, L. J. (2003). Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 269-272). SANTA BARBARA, CA: IEEE.
    Scopus1
    2003 Mawst, L. J., Tansu, N., & Yeh, J. Y. (2003). MOCVD-Grown InGaAsN Quantum-Well Lasers. In C. F. Gmachi, & D. P. Bour (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 4995 (pp. 39-53). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING.
    DOI
    2002 Tansu, N., & Mawst, L. J. (2002). High performance 1300-nm dilute-nitride quantum well lasers by MOCVD. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 33-34).
    2002 Tansu, N., & Mawst, L. J. (2002). Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ&gt;1.17 μm) quantum well lasers. In P. Blood, M. Osinski, & Y. Arakawa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 4646 (pp. 302-312). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING.
    DOI Scopus1
    2002 Tansu, N., & Mawst, L. J. (2002). Temperature sensitivity analysis of high-performance InGaAs(N) (λ = 1.185 - 1.3 μm) Quantum well lasers. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (pp. 269).
    2001 Zhou, D., Lee, T. W., Tansu, N., Hagness, S., & Mawst, L. J. (2001). Large spot-size narrow waveguide VCSEL. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 469-470). SAN DIEGO, CA: IEEE.
    2001 Tansu, N., & Mawst, L. J. (2001). InGaAs/GaAsP/InGaP strain compensated quantum well (λ=1.17 μm) diode lasers on GaAs. In L. J. Maust, & R. U. Martinelli (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 4287 (pp. 188-194). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING.
    DOI
    2001 Tansu, N., Chang, Y. L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R. T., & Mawst, L. J. (2001). Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (λ&gt;1.17μm) quantum well lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 1 (pp. 336-337).
    2000 Tansu, N., & Mawst, L. J. (2000). Compressively-strained InGaAsP-active (λ=0.85μm) VCSELs. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 724-725).
    Scopus12
    1999 Tansu, N., Zhou, D., Rusli, S., & Mawst, L. J. (1999). Compressively-strained InGaAsP-active (λ = 0.78-0.85 μm) regions for VCSELs. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS Vol. 2 (pp. 397-398).
    Scopus2

Professor Nelson Tansu starts at The University of Adelaide in January 2021. Before this, he was a professor at Lehigh University (USA). He had received US$ 13.92 million funding to support his research works on the material synthesis, device physics, and computational nanostructures from the US National Science Foundation, US Department of Defense, US Department of Energy, and US Department of Education.

Courses Taught at Lehigh University (Bethlehem, Pennsylvania, USA) [January 2021 - Present]

  • To be determined.

Courses Taught at Lehigh University (Bethlehem, Pennsylvania, USA) [July 2020 - January 2021]

  • Fall 2003: ECE 450-16 “Physics and Applications of Photonic Crystals”
  • Spring 2004: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
  • Fall 2004: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
  • Fall 2004: ECE 257 “Senior Design Projects” (for senior undergraduate students). 
  • Spring 2005: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
  • Spring 2005: ECE 258 “Senior Design Projects” 
  • Fall 2005: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
  • Spring 2006: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2006: ECE 202 “Introduction to Engineering Electromagnetic”
  • Fall 2006: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
  • Fall 2006: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
  • Spring 2007: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2007: ECE 450-017 “Nitride Semiconductor Device Physics”
  • Spring 2008: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2008: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
  • Spring 2009: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2009: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
  • Spring 2010: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2010: ECE 350/450 “Applied Quantum Mechanics for Engineers”
  • Fall 2010: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2011: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2011: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2012: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2012: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2013: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2013: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2014: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2014: ECE 350/450 “Applied Quantum Mechanics for Engineers”
  • Spring 2015: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2015: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2016: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2016: ECE 451 “Semiconductor Physics and Devices”
  • Winter 2016: ECE 450 “Engineering Teaching & Research Methods” 
  • Spring 2017: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2017: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2018: ECE 203 “Introduction to Electromagnetic Waves”
  • Fall 2018: ECE 350/450 “Applied Quantum Mechanics for Engineers”
  • Spring 2019: ECE 402 “Advanced Engineering Electromagnetics”
  • Fall 2019: ECE 451 “Semiconductor Physics and Devices”
  • Spring 2020: ECE 402 “Advanced Engineering Electromagnetics”
  • Fall 2020: ECE 350/450 “Applied Quantum Mechanics for Engineers”

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