![Dominic Lane](/sites/default/files/styles/profile_large/public/profile-images/28441.jpeg?itok=mFSz6VCg)
Dominic Lane
School of Electrical and Mechanical Engineering
Faculty of Sciences, Engineering and Technology
My research interests are in quantum (opto)electronic devices, compound semiconductor device fabrication, characterization and crystal growth (molecular beam epitaxy).
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Appointments
Date Position Institution name 2023 - ongoing Adjunct Lecturer University of Adelaide 2023 - ongoing Senior Device Engineer Silanna Semiconductor -
Awards and Achievements
Date Type Title Institution Name Country Amount 2021 Fellowship EPSRC Doctoral Prize Fellowship Lancaster University United Kingdom - -
Research Interests
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Journals
Year Citation 2023 Trevisan, A., Hodgson, P. D., Lane, D., Hayne, M., & Koenraad, P. M. (2023). Defect formation in InGaAs/AlSb/InAs memory devices. Journal of Vacuum Science & Technology B, 41(4), 044001-1-044001-7.
2023 Liu, C., Pokharel, N., Lin, Q., Betancourt Ponce, M. A., Sun, J., Lane, D., . . . Mawst, L. J. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science & Technology A, 41(6), 062705-1-062705-8.
2022 Hodgson, P. D., Lane, D., Carrington, P. J., Delli, E., Beanland, R., & Hayne, M. (2022). ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8(4).
Scopus72021 Lane, D., & Hayne, M. (2021). Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory. Journal of Physics D: Applied Physics, 54(35), 355104.
Scopus2 WoS22021 Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R., & Hayne, M. (2021). ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68(5), 2271-2274.
Scopus8 WoS62020 Lane, D., & Hayne, M. (2020). Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory. IEEE Transactions on Electron Devices, 67(2), 474-480.
Scopus11 WoS92018 Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J., & Krier, A. (2018). InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics, 51(7), 075103.
Scopus23 WoS14 -
Conference Papers
Year Citation 2021 Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). Chengdu, China: IEEE.
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Conference Items
Year Citation 2022 Hodgson, P., Lane, D., Carrington, P., & Hayne, M. (2022). ULTRARAM™: a III-V non-volatile memory on Si substrates. Poster session presented at the meeting of UK Semiconductors 2022. 2022 Xiu, X., Lane, D., Hodgson, P., & Hayne, M. (2022). Scaling of ULTRARAM™ III- Sb charge-storage devices for non-volatile random access memories. Poster session presented at the meeting of UK Semiconductors 2022. 2022 Jones, S., Lane, D., Hodgson, P., & Hayne, M. (2022). Experimental comparison of GaAs/AlGaAs DBRs and ohmic contacts for improved electrical injection in GaSb quantum-ring VCSELs. Poster session presented at the meeting of UK Semiconductors 2022. 2021 Lane, D., Hodgson, P., & Hayne, M. (2021). III-V nonvolatile ULTRARAM™ 2x2 memory arrays. Poster session presented at the meeting of APL Material Challenges for Memory (MCfM) conference 2021. 2018 Lane, D. (2018). A new memory device for a low power, non-volatile, non-destructive RAM. Poster session presented at the meeting of UK Semiconductors. -
Patents
Year Citation 2022 Lane, D., & Hayne, M. (2022). CN114080682, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. Various. 2022 Lane, D., & Hayne, M. (2022). EP3977457, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. Europe. 2022 Lane, D., & Hayne, M. (2022). US20220230686, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. USA. -
Theses
Year Citation 2021 Lane, D. (2021). ULTRARAM™: Design, Modelling, Fabrication and Testing of Ultra-low-power III-V Memory Devices and Arrays. (PhD Thesis, Lancaster University).
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