Dominic Lane

Research Interests

Nanoelectronics Nanofabrication, Growth and Self Assembly Quantum Physics Power electronics Radio frequency engineering Condensed Matter Characterisation Technique Development

Dr Dominic Lane

School of Electrical and Mechanical Engineering

College of Engineering and Information Technology

Eligible to supervise Masters and PhD (as Co-Supervisor) - email supervisor to discuss availability.

Leading R&D on Ga2O3-on-SiC (GOSiC) device technologies for high voltage power and RF applications at Silanna Semiconductor.

My research interests are in quantum (opto)electronic devices, compound semiconductor device fabrication, characterization and crystal growth (molecular beam epitaxy).

Date Position Institution name
2024 - ongoing Senior Principal Engineer Silanna Semiconductor
2023 - ongoing Adjunct Lecturer University of Adelaide
2023 - 2026 Senior Device Engineer Silanna Semiconductor

Date Type Title Institution Name Country Amount
2021 Fellowship EPSRC Doctoral Prize Fellowship Lancaster University United Kingdom -

Year Citation
2026 Lane, D., Lamb, D. A., Sanyal, I., Chang, D., Fu, S., Llewelyn, C. P., & Atanackovic, P. B. (2026). Direct heteroepitaxy of
<i>β</i>
-Ga2O3 on 4H-SiC as a prospective foundation for vertical power devices. AIP Advances, 16(3).
DOI
2025 Kumar, A., Dar, M. F., Hodgson, P. D., Lane, D., Carrington, P. J., Delli, E., . . . Dasgupta, A. (2025). Physics, modeling, and benchmarking of ULTRARAM: A compound semiconductor-based memory device. Journal of Applied Physics, 138(9), 8 pages.
DOI Scopus1
2025 Lane, D. (2025). ULTRARAM beyond the lab: Interface and integration challenges in III-V memory devices. Journal of Applied Physics, 138(15), 5 pages.
DOI
2023 Trevisan, A., Hodgson, P. D., Lane, D., Hayne, M., & Koenraad, P. M. (2023). Defect formation in InGaAs/AlSb/InAs memory devices. Journal of Vacuum Science & Technology B, 41(4), 044001-1-044001-7.
DOI
2023 Liu, C., Pokharel, N., Lin, Q., Betancourt Ponce, M. A., Sun, J., Lane, D., . . . Mawst, L. J. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science & Technology A, 41(6), 062705-1-062705-8.
DOI Scopus2 WoS1
2022 Hodgson, P. D., Lane, D., Carrington, P. J., Delli, E., Beanland, R., & Hayne, M. (2022). ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8(4).
DOI Scopus12
2021 Lane, D., & Hayne, M. (2021). Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory. Journal of Physics D: Applied Physics, 54(35), 355104.
DOI Scopus4 WoS5
2021 Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R., & Hayne, M. (2021). ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68(5), 2271-2274.
DOI Scopus11 WoS12
2020 Lane, D., & Hayne, M. (2020). Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory. IEEE Transactions on Electron Devices, 67(2), 474-480.
DOI Scopus12 WoS12
2018 Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J., & Krier, A. (2018). InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics, 51(7), 075103.
DOI Scopus25 WoS20

Year Citation
2021 Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In 2021 5th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM) (pp. 1-3). Chengdu, China: IEEE.
DOI

Year Citation
2022 Hodgson, P., Lane, D., Carrington, P., & Hayne, M. (2022). ULTRARAM™: a III-V non-volatile memory on Si substrates. Poster session presented at the meeting of UK Semiconductors 2022.
2022 Xiu, X., Lane, D., Hodgson, P., & Hayne, M. (2022). Scaling of ULTRARAM™ III- Sb charge-storage devices for non-volatile random access memories. Poster session presented at the meeting of UK Semiconductors 2022.
2022 Jones, S., Lane, D., Hodgson, P., & Hayne, M. (2022). Experimental comparison of GaAs/AlGaAs DBRs and ohmic contacts for improved electrical injection in GaSb quantum-ring VCSELs. Poster session presented at the meeting of UK Semiconductors 2022.
2021 Lane, D., Hodgson, P., & Hayne, M. (2021). III-V nonvolatile ULTRARAM™ 2x2 memory arrays. Poster session presented at the meeting of APL Material Challenges for Memory (MCfM) conference 2021.
2018 Lane, D. (2018). A new memory device for a low power, non-volatile, non-destructive RAM. Poster session presented at the meeting of UK Semiconductors.

Year Citation
2023 Lane, D. (2023). WO/2024/074964, SURFACE CHARACTERIZATION OF MATERIALS USING CATHODOLUMINESCENCE. United States.
2022 Lane, D., & Hayne, M. (2022). CN114080682, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. Various.
2022 Lane, D., & Hayne, M. (2022). EP3977457, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. Europe.
2022 Lane, D., & Hayne, M. (2022). US20220230686, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. USA.

Year Citation
2021 Lane, D. (2021). ULTRARAM™: Design, Modelling, Fabrication and Testing of Ultra-low-power III-V Memory Devices and Arrays. (PhD Thesis, Lancaster University).

Year Citation
2025 Lane, D., Lamb, D. A., Sanyal, I., Chang, D., Fu, S., Llewelyn, C. P., & Atanackovic, P. B. (2025). Direct Heteroepitaxy of β-Ga 2 O 3 on 4H-SiC as a Prospective Foundation for Vertical Power Devices.
DOI

Date Role Research Topic Program Degree Type Student Load Student Name
2025 Co-Supervisor Investigation of future wide bandgap semiconductor materials for integrated circuit applications Doctor of Philosophy Doctorate Full Time Mr Michael Palmer
2025 Co-Supervisor Investigation of future wide bandgap semiconductor materials for integrated circuit applications Doctor of Philosophy Doctorate Full Time Mr Michael Palmer

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