Dominic Lane

Dominic Lane

School of Electrical and Mechanical Engineering

Faculty of Sciences, Engineering and Technology

My research interests are in quantum (opto)electronic devices, compound semiconductor device fabrication, characterization and crystal growth (molecular beam epitaxy).

  • Journals
    Year Citation
    2023 Trevisan, A., Hodgson, P. D., Lane, D., Hayne, M., & Koenraad, P. M. (2023). Defect formation in InGaAs/AlSb/InAs memory devices. Journal of Vacuum Science & Technology B, 41(4), 044001-1-044001-7.
    DOI
    2023 Liu, C., Pokharel, N., Lin, Q., Betancourt Ponce, M. A., Sun, J., Lane, D., . . . Mawst, L. J. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science & Technology A, 41(6), 062705-1-062705-8.
    DOI Scopus1
    2022 Hodgson, P. D., Lane, D., Carrington, P. J., Delli, E., Beanland, R., & Hayne, M. (2022). ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon. Advanced Electronic Materials, 8(4).
    DOI Scopus7
    2021 Lane, D., & Hayne, M. (2021). Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory. Journal of Physics D: Applied Physics, 54(35), 355104.
    DOI Scopus2 WoS2
    2021 Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R., & Hayne, M. (2021). ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory. IEEE Transactions on Electron Devices, 68(5), 2271-2274.
    DOI Scopus8 WoS6
    2020 Lane, D., & Hayne, M. (2020). Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory. IEEE Transactions on Electron Devices, 67(2), 474-480.
    DOI Scopus11 WoS9
    2018 Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J., & Krier, A. (2018). InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics, 51(7), 075103.
    DOI Scopus23 WoS14

  • Conference Papers
    Year Citation
    2021 Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1-3). Chengdu, China: IEEE.
    DOI

  • Conference Items
    Year Citation
    2022 Hodgson, P., Lane, D., Carrington, P., & Hayne, M. (2022). ULTRARAM™: a III-V non-volatile memory on Si substrates. Poster session presented at the meeting of UK Semiconductors 2022.
    2022 Xiu, X., Lane, D., Hodgson, P., & Hayne, M. (2022). Scaling of ULTRARAM™ III- Sb charge-storage devices for non-volatile random access memories. Poster session presented at the meeting of UK Semiconductors 2022.
    2022 Jones, S., Lane, D., Hodgson, P., & Hayne, M. (2022). Experimental comparison of GaAs/AlGaAs DBRs and ohmic contacts for improved electrical injection in GaSb quantum-ring VCSELs. Poster session presented at the meeting of UK Semiconductors 2022.
    2021 Lane, D., Hodgson, P., & Hayne, M. (2021). III-V nonvolatile ULTRARAM™ 2x2 memory arrays. Poster session presented at the meeting of APL Material Challenges for Memory (MCfM) conference 2021.
    2018 Lane, D. (2018). A new memory device for a low power, non-volatile, non-destructive RAM. Poster session presented at the meeting of UK Semiconductors.

  • Patents
    Year Citation
    2022 Lane, D., & Hayne, M. (2022). CN114080682, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. Various.
    2022 Lane, D., & Hayne, M. (2022). EP3977457, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. Europe.
    2022 Lane, D., & Hayne, M. (2022). US20220230686, IMPROVEMENTS RELATING TO ELECTRONIC MEMORY DEVICES. USA.

  • Theses
    Year Citation
    2021 Lane, D. (2021). ULTRARAM™: Design, Modelling, Fabrication and Testing of Ultra-low-power III-V Memory Devices and Arrays. (PhD Thesis, Lancaster University).
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