Research Interests
Artificial Intelligence Biomedical Engineering Biophotonics Compound Semiconductors Functional Materials Knowledge Representation and Machine Learning Lasers and Quantum Electronics Materials Engineering Nanoelectronics Nanophotonics Numerical and Computational Mathematics Optoelectronics & Photonics Photonics Photonics and Electro-Optical Engineering Photonics, Optoelectronics and Optical Communications Power and Energy Systems Engineering Synthesis of Materials Theory and Design of MaterialsProfessor Nelson Tansu
Head of School, Elect. & Mech. Engineering
School of Electrical and Mechanical Engineering
College of Engineering and Information Technology
Eligible to supervise Masters and PhD - email supervisor to discuss availability.
Prof. Nelson Tansu is a Fellow of the US National Academy of Inventors (NAI Fellow; elected in 2016), IEEE Fellow (elevated in 2021), and Clarivate Analytics Highly Cited Researcher (in 2018). Since January 2021, Tansu is the Head of the School of Electrical and Electronics Engineering (EEE) and Professor of Quantum Electronics at The University of Adelaide (Adelaide, South Australia, Australia). From July 2003 until January 2021, Tansu was a faculty member at Lehigh University, where he was the Daniel E. '39 and Patricia M. Smith Endowed Chair Professor in the Department of Electrical and Computer Engineering (ECE), and Director for the Center for Photonics and Nanoelectronics (CPN) at Lehigh University in the United States. His research interests include the materials, devices, computational sciences, and integrated technologies based on semiconductors for sustainability, biomedical sciences, power electronics, and quantum materials.Selected keywords for Tansu's research areas include:photonics, nanoelectronics, quantum devices, semiconductor lasers, VCSELs, III-nitride semiconductors, GaN semiconductors, III-V and III-V-nitrides, III-oxide technologies, LED technologies, MOCVD, Epitaxy, MBE, power electronics, integrated technologies, biomedical devices and systems, computational sciences for nanoscales, machine learning / AI, and quantum materials.
My research focuses on the physics, materials, devices, and integrated technologies based on wide bandgap (III-nitride and oxide-based) semiconductors and 2D materials for photonics, sustainability, health sciences, and computing/communications. My past works had resulted in seminal contributions in III-nitride (AlInGaN and InGaAsN) semiconductor materials and devices with impacts on communications, solid-state lighting, power electronics, energy efficiency, and renewable energy technologies. My future directions include i) the integration of the III-nitride semiconductors, oxide semiconductors, and 2D materials for new technologies enabled by such hybrid integration, and the pursuit of integrated technologies for biomedical and quantum computing applications, and ii) the use of machine learning for driving discoveries and innovations in basic material sciences and device technologies.
Nelson Tansu - Google Scholar
| Date | Position | Institution name |
|---|---|---|
| 2021 - ongoing | Head of School & Professor | The University of Adelaide |
| 2021 - ongoing | Professor of Quantum Electronics | The University of Adelaide |
| 2014 - 2021 | Director | Lehigh University |
| 2014 - 2021 | Daniel E. & Patricia M. Smith Endowed Chair Professor (Tenure) | Lehigh University |
| 2014 - 2014 | New Century Endowed Chair Professor (Tenure) | Lehigh University |
| 2013 - 2014 | New Century Endowed Chair Associate Professor (Tenure) | Lehigh University |
| 2010 - 2013 | Class of 1961 Associate Professor (with Tenure) | Lehigh University |
| 2009 - 2010 | Associate Professor (with Tenure) | Lehigh University |
| 2007 - 2009 | Rossin Assistant Professor (Term Chair) | Lehigh University |
| 2003 - 2007 | Assistant Professor | Lehigh University |
| Language | Competency |
|---|---|
| English | Can read, write, speak, understand spoken and peer review |
| Indonesian | Can read, write, speak, understand spoken and peer review |
| Malay | Can read, write, speak, understand spoken and peer review |
| Date | Institution name | Country | Title |
|---|---|---|---|
| 1998 - 2003 | University of Wisconsin–Madison | United States | Ph.D. (Electrical Engineering) |
| 1995 - 1998 | University of Wisconsin–Madison | United States | B.S. (Applied Mathematics, Electrical Engineering, and Physics - AMEP) |
| Year | Citation |
|---|---|
| 2025 | Liu, X., Liao, Y., Goodrich, J., Fu, H., Tansu, N., & Tan, C. K. (2025). Structural and Electronic Properties of Corundum and Monoclinic (Al<inf>1-x</inf>In<inf>x</inf>)<inf>2</inf>O<inf>3</inf> Alloys by First-Principles. Advanced Theory and Simulations, 8(9), 8 pages. |
| 2025 | Islam, M. S., Sultana, J., Lawrence, N. P., Pereira, A. T., Salamon, S. J., Dinovitser, A., . . . Abbott, D. (2025). Ka-band Link Budget Analysis for Deep Space Communications. IEEE Access, 13, 159064-159076. |
| 2025 | Behnia-Willison, F., Aryan, P., Salehnia, M., Willison, N., Nguyen, T. T. T., Tansu, N., & Abbott, D. (2025). In Vivo investigation of xenotransplanted human blood-derived scaffold into mice as a biodegradable construct for improvement of pelvic floor repair. Frontiers in Bioengineering and Biotechnology, 13, 1627538-1-1627538-15. |
| 2024 | Lin, Q., Wang, G., Liu, C., Sanyal, S., Mukhopadhyay, S., Dwyer, M., . . . Gupta, C. (2024). Demonstration of Watt Level 375 nm Short Cavity Laser Diode with Etched Facets. IEEE Photonics Technology Letters, 36(11), 741-744. Scopus5 WoS4 |
| 2024 | Song, C., Ho, S. -W., Huang, W., & Tansu, N. (2024). Camera-based Positioning System for Battery-less Retroreflective Tags. IEEE Sensors Journal, 24(14), 22867-22876. Scopus1 WoS1 |
| 2024 | Lin, Q., Liu, C., Wang, G., Sanyal, S., Dwyer, M., Seitz, M., . . . Pasayat, S. S. (2024). 376 nm High-Power UV-A Laser Diodes with GaN Waveguide. IEEE Photonics Technology Letters, 36(24), 1449-1452. Scopus4 WoS1 |
| 2023 | Xue, H., Muyeed, S. A. A., Palmese, E., Rogers, D., Song, R., Tansu, N., & Wierer, J. J. (2023). Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes. IEEE Journal of Quantum Electronics, 59(2), 1-9. Scopus13 WoS9 |
| 2023 | Islam, M. S., Upadhyay, A., Ako, R. T., Lawrence, N. P., Sultana, J., Ranjan, A., . . . Abbott, D. (2023). Ultrahigh-Q Resonance in Bound States in the Continuum–Enabled Plasmonic Terahertz Metasurface. Advanced Photonics Research, 4(9), 2300121-1-2300121-8. WoS3 |
| 2023 | Liu, C., Pokharel, N., Lin, Q., Betancourt Ponce, M. A., Sun, J., Lane, D., . . . Mawst, L. J. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science & Technology A, 41(6), 062705-1-062705-8. Scopus1 |
| 2022 | Sun, W., Fu, H., Borovac, D., Goodrich, J. C., Tan, C. K., & Tansu, N. (2022). Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters. IEEE Journal of Quantum Electronics, 58(2), 1-6. Scopus2 WoS1 |
| 2022 | Wei, X., Muyeed, S. A. A., Xue, H., Palmese, E., Song, R., Tansu, N., & Wierer, J. J. (2022). Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates. Photonics Research, 10(1), 33-40. Scopus4 WoS3 |
| 2022 | Fragkos, I. E., Sun, W., Borovac, D., Song, R., Wierer, J., Wierer, J., . . . Tansu, N. (2022). Delta InN-InGaN Quantum Wells with AlGaN Interlayers for Long Wavelength Emission. IEEE Journal of Quantum Electronics, 58(2), 1. |
| 2021 | Goodrich, J. C., Tan, C. K., Borovac, D., & Tansu, N. (2021). Prospects for hole doping in dilute-anion III-nitrides. Applied Physics Letters, 118(7), 1-6. Scopus2 WoS2 |
| 2021 | Gupta, M., Hawari, H. F., Kumar, P., Burhanudin, Z. A., & Tansu, N. (2021). Functionalized reduced graphene oxide thin films for ultrahigh co<inf>2</inf> gas sensing performance at room temperature. Nanomaterials, 11(3), 1-18. Scopus34 WoS33 Europe PMC10 |
| 2021 | Palmese, E., Peart, M. R., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2021). Thermal oxidation rates and resulting optical constants of Al<inf>0.83</inf>In<inf>0.17</inf>N films grown on GaN. Journal of Applied Physics, 129(12), 6 pages. Scopus8 WoS7 |
| 2021 | Ullah, Z., Nawi, I., Witjaksono, G., Tansu, N., Khattak, M. I., Junaid, M., & Usman, F. (2021). Electrically enhanced graphene-metal plasmonic antenna for infrared sensing. Optik, 241, 1-10. Scopus3 WoS3 |
| 2021 | Fu, H., Goodrich, J. C., Ogidi-Ekoko, O., & Tansu, N. (2021). Power electronics figure-of-merit of ScAlN. Applied Physics Letters, 119(7), 1-4. Scopus5 WoS5 |
| 2021 | Muyeed, S. A. A., Borovac, D., Xue, H., Wei, X., Song, R., Tansu, N., & Wierer, J. J. (2021). Recombination rates of InxGa1-xN/AlyGa1-yN/GaN multiple quantum wells emitting from 640 to 565 nm. IEEE Journal of Quantum Electronics, 57(6), 1. Scopus3 WoS3 |
| 2021 | Witjaksono, G., Junaid, M., Khir, M. H., Ullah, Z., Tansu, N., Saheed, M. S. B. M., . . . Nawaz, R. (2021). Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide. Molecules, 26(21), 1-16. Scopus57 WoS52 Europe PMC10 |
| 2021 | Mawst, L. J., Kim, H., Smith, G., Sun, W., & Tansu, N. (2021). Strained-layer quantum well materials grown by MOCVD for diode laser application. Progress in Quantum Electronics, 75, 100303. Scopus15 WoS14 |
| 2020 | Fu, H., Goodrich, J. C., & Tansu, N. (2020). Band alignment of ScAlN/GaN heterojunction. APPLIED PHYSICS LETTERS, 117(23), 1-4. WoS12 |
| 2020 | Liu, C. -Y., Huang, H. -C., Choi, W., Kim, J., Jung, K., Sun, W., . . . Li, X. (2020). Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy. ACS APPLIED ELECTRONIC MATERIALS, 2(2), 419-425. Scopus17 WoS15 |
| 2020 | Ogidi-Ekoko, O. N., Liang, W., Xue, H., & Tansu, N. (2020). Machine Learning Inspired Design of Complex-Shaped GaN Subwavelength Grating Reflectors. IEEE Photonics Journal, 13(1), 1-13. Scopus2 WoS2 |
| 2020 | Junaid, M., Khir, M. H. M., Witjaksono, G., Tansu, N., Saheed, M. S. M., Kumar, P., . . . Usman, F. (2020). Boron-doped reduced graphene oxide with tunable bandgap and enhanced surface plasmon resonance. Molecules, 25(16), 19 pages. Scopus52 WoS46 Europe PMC18 |
| 2020 | Borovac, D., Sun, W., Peart, M. R., Song, R., Wierer, J. J., & Tansu, N. (2020). Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy. Journal of Crystal Growth, 548, 5 pages. Scopus8 WoS7 |
| 2020 | Klrll, E. A., Turegun, F. A., Selcuk, B., Gultekin, M. H., Tansu, N., Erozenci, A., & Onal, B. (2020). Does Previous Open Stone Surgery Affect the Outcome of Shock Wave Lithotripsy Treatment in Children?. Urologia Internationalis, 105(1-2), 52-58. Europe PMC1 |
| 2020 | Junaid, M., Khir, M. H. M., Witjaksono, G., Ullah, Z., Tansu, N., Mohamed Saheed, M. S., . . . Siddiqui, M. A. (2020). A review on graphene-based light emitting functional devices. Molecules, 25(18), 32 pages. Scopus26 WoS21 Europe PMC6 |
| 2020 | Peart, M. R., Borovac, D., Sun, W., Song, R., Tansu, N., & Wierer, J. J. (2020). AlInN/GaN diodes for power electronic devices. Applied Physics Express, 13(9), 4 pages. Scopus9 WoS2 |
| 2020 | Ogidi-Ekoko, O. N., Goodrich, J. C., Howzen, A. J., Peart, M. R., Strandwitz, N. C., Wierer, J. J., & Tansu, N. (2020). Electrical properties of MgO/GaN metal-oxide-semiconductor structures. Solid-State Electronics, 172, 7 pages. Scopus11 WoS10 |
| 2020 | Al Muyeed, S. A., Wei, X., Borovac, D., Song, R., Tansu, N., & Wierer, J. J. (2020). Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates. Journal of Crystal Growth, 540, 6 pages. Scopus5 WoS2 |
| 2020 | Ullah, Z., Witjaksono, G., Nawi, I., Tansu, N., Khattak, M. I., & Junaid, M. (2020). A review on the development of tunable graphene nanoantennas for terahertz optoelectronic and plasmonic applications. Sensors (Switzerland), 20(5), 65 pages. Scopus121 WoS105 Europe PMC18 |
| 2020 | Goodrich, J. C., Farinha, T. G., Ju, L., Howzen, A. J., Kundu, A., Ogidi-Ekoko, O. N., . . . Strandwitz, N. C. (2020). Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition. Journal of Crystal Growth, 536, 5 pages. Scopus9 WoS9 |
| 2020 | Borovac, D., Sun, W., Tan, C. K., & Tansu, N. (2020). Electronic properties of dilute-As InGaNAs alloys: A first-principles study. Journal of Applied Physics, 127(1), 6 pages. Scopus2 WoS2 |
| 2020 | Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2020). On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE. Journal of Crystal Growth, 533, 8 pages. Scopus15 WoS13 |
| 2020 | Ullah, Z., Nawi, I., Witjaksono, G., Tansu, N., Khattak, M. I., Junaid, M., . . . Magsi, S. A. (2020). Dynamic absorption enhancement and equivalent resonant circuit modeling of tunable graphene-metal hybrid antenna. Sensors (Switzerland), 20(11), 34 pages. Scopus15 WoS12 Europe PMC9 |
| 2020 | Sun, W., Kim, H., Mawst, L. J., & Tansu, N. (2020). Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness. Journal of Crystal Growth, 531, 6 pages. Scopus11 WoS10 |
| 2019 | Fu, H., Goodrich, J. C., Ogidi-Ekoko, O., & Tansu, N. (2019). Type-II AlInN/ZnGeN<inf>2</inf> quantum wells for ultraviolet laser diodes. Journal of Applied Physics, 126(13), 5 pages. Scopus6 WoS5 |
| 2019 | Wierer, J. J., & Tansu, N. (2019). III-Nitride Micro-LEDs for Efficient Emissive Displays. Laser and Photonics Reviews, 13(9), 15 pages. Scopus140 WoS129 |
| 2019 | Al Muyeed, S. A., Sun, W., Peart, M. R., Lentz, R. M., Wei, X., Borovac, D., . . . Wierer, J. J. (2019). Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers. Journal of Applied Physics, 126(21), 7 pages. Scopus16 WoS12 |
| 2019 | Fu, H., Sun, W., Ogidi-Ekoko, O., Goodrich, J. C., & Tansu, N. (2019). Gain characteristics of InGaN quantum wells with AlGaInN barriers. AIP Advances, 9(4), 7 pages. Scopus5 WoS6 |
| 2019 | Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2019). Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports, 9(1), 8 pages. Scopus9 WoS10 Europe PMC1 |
| 2019 | Peart, M. R., Wei, X., Borovac, D., Sun, W., Tansu, N., & Wierer, J. J. (2019). Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices. ACS APPLIED ELECTRONIC MATERIALS, 1(8), 1367-1371. Scopus16 WoS14 |
| 2018 | Sun, W., Tan, C. K., Wierer, J. J., & Tansu, N. (2018). Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports, 8(1), 7 pages. Scopus12 WoS9 Europe PMC3 |
| 2018 | Zeng, G., Sun, W., Song, R., Tansu, N., & Krick, B. A. (2018). Erratum: Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear (Scientific reports (2017) 7 1 (14126)). Scientific reports, 8(1), 2580. |
| 2018 | Wei, X., Al Muyeed, S. A., Peart, M. R., Sun, W., Tansu, N., & Wierer, J. J. (2018). Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching. Applied Physics Letters, 113(12), 4 pages. Scopus9 WoS8 |
| 2018 | Fragkos, I. E., & Tansu, N. (2018). Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides. Scientific Reports, 8(1), 7 pages. Scopus18 WoS17 Europe PMC2 |
| 2018 | Peart, M. R., Tansu, N., & Wierer, J. J. (2018). AlInN for Vertical Power Electronic Devices. IEEE Transactions on Electron Devices, 65(10), 4276-4281. Scopus13 WoS11 |
| 2018 | Borovac, D., Tan, C. K., & Tansu, N. (2018). First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor. AIP Advances, 8(8), 8 pages. Scopus5 WoS5 |
| 2018 | Zeng, G., Yang, X., Tan, C. K., Marvel, C. J., Koel, B. E., Tansu, N., & Krick, B. A. (2018). Shear-Induced Changes of Electronic Properties in Gallium Nitride. ACS Applied Materials and Interfaces, 10(34), 29048-29057. Scopus9 WoS8 Europe PMC2 |
| 2018 | Sun, W., Al Muyeed, S. A., Song, R., Wierer, J. J., & Tansu, N. (2018). Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission. Applied Physics Letters, 112(20), 5 pages. Scopus26 WoS27 |
| 2018 | Zeng, G., Tansu, N., & Krick, B. A. (2018). Moisture dependent wear mechanisms of gallium nitride. Tribology International, 118, 120-127. Scopus25 WoS23 |
| 2018 | Borovac, D., Tan, C. K., & Tansu, N. (2018). First-Principle Study of the Optical Properties of Dilute-P GaN<inf>1-xPx Alloys. Scientific Reports, 8(1), 9 pages. Scopus10 WoS9 Europe PMC1 |
| 2017 | Sun, W., Tan, C. K., & Tansu, N. (2017). AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports, 7(1), 8 pages. Scopus37 WoS33 Europe PMC8 |
| 2017 | Huang, Y., Badar, M., Nitkowski, A., Weinroth, A., Tansu, N., & Zhou, C. (2017). Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device. Biomedical Optics Express, 8(8), 3856-3867. Scopus34 WoS22 Europe PMC9 |
| 2017 | Sun, W., Tan, C. K., & Tansu, N. (2017). III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports, 7(1), 8 pages. Scopus33 WoS34 Europe PMC6 |
| 2017 | Zeng, G., Yang, X., Skinner, C. H., Koel, B. E., Tansu, N., & Krick, B. A. (2017). Controlling factors of GaN wear. Tribology and Lubrication Technology, 73(3), 22-28. Scopus6 WoS4 |
| 2017 | Tan, C. K., Sun, W., Wierer, J. J., & Tansu, N. (2017). Effect of interface roughness on Auger recombination in semiconductor quantum wells. AIP Advances, 7(3), 8 pages. Scopus18 WoS17 |
| 2017 | Borovac, D., Tan, C. K., & Tansu, N. (2017). Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports, 7(1), 8 pages. Scopus8 WoS9 Europe PMC2 |
| 2017 | Gültekin, M. H., Türegün, F. A., Ozkan, B., Tülü, B., Güleç, G. G., Tansu, N., . . . Önal, B. (2017). Does Previous Open Renal Stone Surgery Affect the Outcome of Extracorporeal Shockwave Lithotripsy Treatment in Adults with Renal Stones?. Journal of Endourology, 31(12), 1295-1300. Scopus4 WoS4 Europe PMC2 |
| 2017 | Fragkos, I. E., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes. Scientific Reports, 7(1), 12 pages. Scopus10 WoS9 Europe PMC3 |
| 2017 | Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports, 7(1), 13 pages. Scopus18 WoS15 Europe PMC3 |
| 2017 | Zeng, G., Sun, W., Song, R., Tansu, N., & Krick, B. A. (2017). Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports, 7(1), 6 pages. Scopus18 WoS17 Europe PMC6 |
| 2017 | Al Muyeed, S. A., Sun, W., Wei, X., Song, R., Koleske, D. D., Tansu, N., & Wierer, J. J. (2017). Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers. AIP Advances, 7(10), 7 pages. Scopus35 WoS27 |
| 2016 | Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). First-Principle Electronic Properties of Dilute-P GaN 1-x P x Alloy for Visible Light Emitters. Scientific Reports, 6(1), 9 pages. Scopus21 WoS20 Europe PMC6 |
| 2016 | Zhu, P., Zhu, H., Qin, W., Dantas, B. H., Sun, W., Tan, C. K., & Tansu, N. (2016). Narrow-linewidth red-emission Eu<sup>3+</sup>-doped TiO2 spheres for light-emitting diodes. Journal of Applied Physics, 119(12), 8 pages. Scopus34 WoS30 |
| 2016 | Tan, C. K., Sun, W., Borovac, D., & Tansu, N. (2016). Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports, 6(1), 7 pages. Scopus27 WoS23 Europe PMC2 |
| 2016 | Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). Dilute-As AlNAs alloy for deep-ultraviolet emitter. Scientific Reports, 6(1), 7 pages. Scopus9 WoS9 Europe PMC1 |
| 2016 | Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2016). InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports, 6(1), 6 pages. Scopus34 WoS40 Europe PMC5 |
| 2016 | Zeng, G., Tan, C. K., Tansu, N., & Krick, B. A. (2016). Ultralow wear of gallium nitride. Applied Physics Letters, 109(5), 5 pages. Scopus47 WoS46 |
| 2016 | Wierer, J. J., Tansu, N., Fischer, A. J., & Tsao, J. Y. (2016). III-nitride quantum dots for ultra-efficient solid-state lighting. Laser and Photonics Reviews, 10(4), 612-622. Scopus32 WoS31 |
| 2015 | Tan, C. K., & Tansu, N. (2015). Auger recombination rates in dilute-As GaNAs semiconductor. Aip Advances, 5(5), 7 pages. Scopus25 WoS24 |
| 2015 | Jagota, M., & Tansu, N. (2015). Conductivity of nanowire arrays under random and ordered orientation configurations. Scientific Reports, 5(1), 5 pages. Scopus62 WoS58 Europe PMC14 |
| 2015 | Tan, C. K., & Tansu, N. (2015). Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology, 10(2), 107-109. Scopus61 WoS60 Europe PMC13 |
| 2015 | Tan, C. K., & Tansu, N. (2015). First-principle natural band alignment of GaN / dilute-As GaNAs alloy. Aip Advances, 5(1), 8 pages. Scopus23 WoS11 |
| 2015 | Tansu, N., & So, F. (2015). Special Section Guest Editorial:Solid-State Lighting: Photonics and Technologies. Journal of Photonics for Energy, 5(1), 057601. Scopus1 |
| 2015 | Kafafi, Z. H., Martín-Palma, R. J., Nogueira, A. F., O'Carroll, D. M., Pietron, J. J., Samuel, I. D. W., . . . Tsakalakos, L. (2015). The role of photonics in energy. Journal of Photonics for Energy, 5(1), 44 pages. Scopus19 WoS14 |
| 2015 | Ozkan, B., Dogan, C., Can, G. E., Tansu, N., Erozencı, A., & Onal, B. (2015). Does ureteral stenting matter for stone size? A retrospectıve analyses of 1361 extracorporeal shock wave lithotripsy patients. Central European Journal of Urology, 68(3), 358-364. Scopus6 WoS5 Europe PMC3 |
| 2015 | Zhu, P., & Tansu, N. (2015). Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays. Applied Optics, 54(20), 6305-6312. Scopus26 WoS24 Europe PMC8 |
| 2015 | Zhu, P., & Tansu, N. (2015). Effect of packing density and packing geometry on light extraction of iii-nitride light-emitting diodes with microsphere arrays. Photonics Research, 3(4), 184-191. Scopus35 WoS35 |
| 2015 | Zhu, P., Tan, C. -K., Sun, W., & Tansu, N. (2015). Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. APPLIED OPTICS, 54(34), 10299-10303. WoS14 Europe PMC3 |
| 2015 | Tansu, N., & So, F. (2015). Solid-State Lighting: Photonics and Technologies. JOURNAL OF PHOTONICS FOR ENERGY, 5, 1 page. |
| 2014 | Tansu, N. (2014). Photonics-advances in fundamental sciences and engineering technologies of light. Photonics, 1(1), 1-8. Scopus3 WoS2 |
| 2014 | Horng, R. H., Lau, K. M., Kuo, H. C., & Tansu, N. (2014). Solid-state lighting with high brightness, high efficiency, and low cost. International Journal of Photoenergy, 2014, 3 pages. |
| 2013 | Banerjee, P. P., Evans, D. R., Lee, W., Reshetnyak, V. Y., & Tansu, N. (2013). Hybrid organic-inorganic materials for novel photonic applications. Applied Optics, 52(22), HM1-HM3. Scopus4 WoS4 Europe PMC1 |
| 2013 | Onal, B., Citgez, S., Tansu, N., Emin, G., Demirkesen, O., Talat, Z., . . . Erozenci, A. (2013). What changed in the management of pediatric stones after the introduction of minimally invasive procedures? A single-center experience over 24 years. Journal of Pediatric Urology, 9(6 PART A), 910-914. Scopus31 WoS31 Europe PMC23 |
| 2013 | Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2013). Predictive factors and management of steinstrasse after shock wave lithotripsy in pediatric urolithiasis-a multivariate analysis study. Journal of Endourology, 27(2), 126. |
| 2013 | Zhang, J., & Tansu, N. (2013). Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. IEEE Photonics Journal, 5(2), 11 pages. Scopus97 WoS105 |
| 2013 | Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Strikingly different behaviors of photoluminescence and terahertz generation in InGaN/GaN quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 19(1), 6-11. Scopus5 WoS8 |
| 2013 | Onal, B., Tansu, N., Demirkesen, O., Yalcin, V., Huang, L., Nguyen, H. T., . . . Erozenci, A. (2013). Nomogram and scoring system for predicting stone-free status after extracorporeal shock wave lithotripsy in children with urolithiasis. BJU International, 111(2), 344-352. Scopus52 WoS42 Europe PMC32 |
| 2013 | Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Investigation of large Stark shifts in InGaN/GaN multiple quantum wells. Journal of Applied Physics, 113(3), 5 pages. Scopus20 WoS22 |
| 2013 | Banerjee, P. P., Evans, D. R., Lee, W., Reshetnyak, V. Y., & Tansu, N. (2013). Hybrid organic-inorganic materials for photonic applications. Optical Materials Express, 3(8), 1149-1151. Scopus7 WoS5 |
| 2013 | Zhang, J., & Tansu, N. (2013). Engineering of AlGaN-delta-GaN quantum-well gain media for mid- and deep-ultraviolet lasers. IEEE Photonics Journal, 5(2), 9 pages. Scopus37 WoS37 |
| 2013 | Liu, G., Zhang, J., Tan, C. K., & Tansu, N. (2013). Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes. IEEE Photonics Journal, 5(2), 11 pages. Scopus114 WoS142 |
| 2013 | Li, X. H., Zhu, P., Liu, G., Zhang, J., Song, R., Ee, Y. K., . . . Tansu, N. (2013). Light extraction efficiency enhancement of III-nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays. IEEE OSA Journal of Display Technology, 9(5), 324-332. Scopus92 WoS90 |
| 2013 | Zhao, H., Jiao, X., & Tansu, N. (2013). Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes. IEEE/OSA Journal of Display Technology, 9(4), 199-206. Scopus12 WoS9 |
| 2013 | Zhu, P., Liu, G., Zhang, J., & Tansu, N. (2013). FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays. IEEE OSA Journal of Display Technology, 9(5), 317-323. Scopus106 WoS103 |
| 2013 | Zhao, H., Liu, G., Zhang, J., Arif, R. A., & Tansu, N. (2013). Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes. IEEE OSA Journal of Display Technology, 9(4), 212-225. Scopus194 WoS181 |
| 2013 | Tan, C. K., Zhang, J., Li, X. H., Liu, G., Tayo, B. O., & Tansu, N. (2013). First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters. IEEE/OSA Journal of Display Technology, 9(4), 272-279. Scopus102 WoS96 |
| 2013 | Tansu, N., So, F., & Pei, Q. (2013). Guest editorial recent advances in solid state lighting. IEEE/OSA Journal of Display Technology, 9(4), 187-189. Scopus1 |
| 2012 | Xu, L., Patel, D., Menoni, C. S., Pikal, J. M., Yeh, J. Y., Huang, J. Y. T., . . . Tansu, N. (2012). Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells. IEEE Photonics Journal, 4(6), 2382-2389. Scopus8 WoS7 |
| 2012 | Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2012). Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well. IEEE Photonics Journal, 4(6), 2262-2271. Scopus16 WoS17 |
| 2012 | Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2012). Predictive factors and management of steinstrasse after shock wave lithotripsy in pediatric urolithiasis - A multivariate analysis study. Urology, 80(5), 1127-1131. Scopus15 WoS12 Europe PMC8 |
| 2012 | Koo, W. H., Youn, W., Zhu, P., Li, X. H., Tansu, N., & So, F. (2012). Light extraction of organic light emitting diodes by defective hexagonal-close-packed array. Advanced Functional Materials, 22(16), 3454-3459. Scopus170 WoS163 |
| 2012 | Liu, G., Zhang, J., Li, X. H., Huang, G. S., Paskova, T., Evans, K. R., . . . Tansu, N. (2012). Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates. Journal of Crystal Growth, 340(1), 66-73. Scopus52 WoS52 |
| 2011 | Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Efficient terahertz generation within InGaN/GaN multiple quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 17(1), 48-53. Scopus28 WoS22 |
| 2011 | Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes. Applied Physics Letters, 98(15), 3 pages. Scopus95 WoS97 |
| 2011 | Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. IEEE Journal of Quantum Electronics, 47(6), 870-877. Scopus22 |
| 2011 | Liu, G., Zhao, H., Zhang, J., Park, J. H., Mawst, L. J., & Tansu, N. (2011). Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography. Nanoscale Research Letters, 6(1), 10 pages. Scopus70 WoS71 Europe PMC13 |
| 2011 | Li, X. H., Song, R., Ee, Y. K., Kumnorkaew, P., Gilchrist, J. F., & Tansu, N. (2011). Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios. IEEE Photonics Journal, 3(3), 489-499. Scopus195 WoS200 |
| 2011 | Zhao, H., Liu, G., Zhang, J., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2011). Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express, 19(104), A991-A1007. Scopus567 WoS561 Europe PMC73 |
| 2011 | Zhang, J., Tong, H., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2011). Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents. Journal of Applied Physics, 109(5), 6 pages. Scopus77 WoS69 |
| 2011 | Zhang, J., Zhao, H., & Tansu, N. (2011). Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes. Applied Physics Letters, 98(17), 3 pages. Scopus129 WoS127 |
| 2011 | Zhang, J., Kutlu, S., Liu, G., & Tansu, N. (2011). High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 110(4), 6 pages. Scopus45 WoS42 |
| 2011 | Zhang, J., & Tansu, N. (2011). Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes. Journal of Applied Physics, 110(11), 5 pages. Scopus165 WoS153 |
| 2011 | Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of fast and slow decays in InGaN/GaN quantum wells. Applied Physics Letters, 99(8), 3 pages. Scopus53 WoS49 |
| 2010 | Zhang, J., Zhao, H., & Tansu, N. (2010). Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters, 97(11), 3 pages. Scopus166 WoS149 |
| 2010 | Tong, H., Zhang, J., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2010). Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition. Applied Physics Letters, 97(11), 3 pages. Scopus82 WoS76 |
| 2010 | Zhao, H., Liu, G., & Tansu, N. (2010). Analysis of InGaN-delta-InN quantum wells for light-emitting diodes. Applied Physics Letters, 97(13), 3 pages. Scopus183 WoS79 |
| 2010 | Zhao, H., & Tansu, N. (2010). Optical gain characteristics of staggered InGaN quantum wells lasers. Journal of Applied Physics, 107(11), 12 pages. Scopus119 WoS96 |
| 2010 | Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire. Journal of Crystal Growth, 312(8), 1311-1315. Scopus110 WoS110 |
| 2010 | Zhao, H., Liu, G., Arif, R. A., & Tansu, N. (2010). Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes. Solid State Electronics, 54(10), 1119-1124. Scopus211 WoS206 |
| 2010 | Tansu, N., Zhao, H., Liu, G., Li, X. H., Zhang, J., Tong, H., & Ee, Y. K. (2010). III-nitride photonics. IEEE Photonics Journal, 2(2), 241-248. Scopus161 WoS158 |
| 2010 | Sun, G., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., Tansu, N., & Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. Applied Physics Letters, 97(2), 3 pages. Scopus12 WoS12 |
| 2010 | Xu, G., Ding, Y. J., Zhao, H., Liu, G., Jamil, M., Tansu, N., . . . Speck, J. S. (2010). THz generation from InN films due to destructive interference between optical rectification and photocurrent surge. Semiconductor Science and Technology, 25(1), 5 pages. Scopus26 WoS26 |
| 2009 | Zhao, H., Liu, G., Li, X. H., Huang, G. S., Poplawsky, J. D., Penn, S. T., . . . Tansu, N. (2009). Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile. Applied Physics Letters, 95(6), 3 pages. Scopus188 WoS157 |
| 2009 | Ee, Y. K., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2009). Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1066-1072. Scopus174 WoS166 |
| 2009 | Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Zhao, H., Gilchrist, J. F., & Tansu, N. (2009). Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1218-1225. Scopus139 WoS132 |
| 2009 | Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Gilchrist, J. F., & Tansu, N. (2009). Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures. Optics Express, 17(16), 13747-13757. Scopus135 WoS133 Europe PMC25 |
| 2009 | Tansu, N., Schubert, E. F., Kuo, H. C., & Smowton, P. M. (2009). Introduction to the issue on solid-state lighting. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1025-1027. Scopus2 WoS2 |
| 2009 | Onal, B., Citgez, S., Tansu, N., Talat, Z., & Oner, A. (2009). Tablets of the potassium citrate may cause a stone-like image: A case report. Urological Research, 37(3), 165-168. Scopus3 WoS4 Europe PMC5 |
| 2009 | Zhao, H., Arif, R. A., & Tansu, N. (2009). Design analysis of staggered InGaN quantum wells light-emitting diodes at 500540 nm. IEEE Journal on Selected Topics in Quantum Electronics, 15(4), 1104-1114. Scopus155 WoS136 |
| 2009 | Zhao, H., Arif, R. A., Ee, Y. K., & Tansu, N. (2009). Self-cnsistent analysis of strain-compensated InGaN-AlGaN quantum wells for lasers and light-emitting diodes. IEEE Journal of Quantum Electronics, 45(1), 66-78. Scopus240 WoS226 |
| 2008 | Tripathy, S. K., Xu, G., Mu, X., Ding, Y. J., Jamil, M., Arif, R. A., . . . Khurgin, J. B. (2008). Phonon-assisted ultraviolet anti-Stokes photoluminescence from GaN film grown on Si (111) substrate. Applied Physics Letters, 93(20), 3 pages. Scopus18 WoS16 |
| 2008 | Kumnorkaew, P., Ee, Y. K., Tansu, N., & Gilchrist, J. F. (2008). Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays. Langmuir, 24(21), 12150-12157. Scopus172 WoS164 Europe PMC53 |
| 2008 | Jamil, M., Zhao, H., Higgins, J. B., & Tansu, N. (2008). Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE. Journal of Crystal Growth, 310(23), 4947-4953. Scopus47 WoS44 |
| 2008 | Jamil, M., Arif, R. A., Ee, Y. K., Tong, H., Higgins, J. B., & Tansu, N. (2008). MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates. Physica Status Solidi A Applications and Materials Science, 205(7), 1619-1624. Scopus37 WoS37 |
| 2008 | Tsvid, G., Kirch, J., Mawst, L. J., Kanskar, M., Cai, J., Arif, R. A., . . . Blood, P. (2008). Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers. IEEE Journal of Quantum Electronics, 44(8), 732-739. Scopus17 WoS15 |
| 2008 | Jamil, M., Zhao, H., Higgins, J. B., & Tansu, N. (2008). MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode. Physica Status Solidi A Applications and Materials Science, 205(12), 2886-2891. Scopus38 WoS38 |
| 2008 | Mawst, L. J., Huang, J. Y. T., Xu, D. P., Yeh, J. Y., Tsvid, G., Kuech, T. F., & Tansu, N. (2008). MOCVD-grown dilute nitride type II quantum wells. IEEE Journal on Selected Topics in Quantum Electronics, 14(4), 979-991. Scopus19 WoS20 |
| 2008 | Zhao, H., Arif, R. A., & Tansu, N. (2008). Self-consistent gain analysis of type-II 'W' InGaN-GaNAs quantum well lasers. Journal of Applied Physics, 104(4), 7 pages. Scopus120 WoS105 |
| 2008 | Ee, Y. K., Zhao, H., Arif, R. A., Jamil, M., & Tansu, N. (2008). Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 310(7-9), 2320-2325. Scopus46 WoS44 |
| 2008 | Arif, R. A., Zhao, H., Ee, Y. K., & Tansu, N. (2008). Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes. IEEE Journal of Quantum Electronics, 44(6), 573-580. Scopus138 WoS131 |
| 2008 | Sahinkanat, T., Ekerbicer, H., Onal, B., Tansu, N., Resim, S., Citgez, S., & Oner, A. (2008). Evaluation of the Effects of Relationships Between Main Spatial Lower Pole Calyceal Anatomic Factors on the Success of Shock-Wave Lithotripsy in Patients with Lower Pole Kidney Stones. Urology, 71(5), 801-805. Scopus48 WoS35 Europe PMC24 |
| 2008 | Hsu, C. C., Lin, J. H., Chen, Y. S., Lin, Y. H., Kuo, H. C., Wang, S. C., . . . Mawst, L. J. (2008). Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells. Journal of Physics D: Applied Physics, 41(8), 6 pages. Scopus3 WoS3 |
| 2008 | Arif, R. A., Zhao, H., & Tansu, N. (2008). Type-II InGaN-GaNAs quantum wells for lasers applications. Applied Physics Letters, 92(1), 3 pages. Scopus116 WoS116 |
| 2007 | Arif, R. A., Ee, Y. K., & Tansu, N. (2007). Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Applied Physics Letters, 91(9), 3 pages. Scopus296 WoS269 |
| 2007 | Ee, Y. K., Arif, R. A., Tansu, N., Kumnorkaew, P., & Gilchrist, J. F. (2007). Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O2 /polystyrene microlens arrays. Applied Physics Letters, 91(22), 3 pages. Scopus153 WoS141 |
| 2006 | Anton, O., Xu, L. F., Patel, D., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., . . . Tansu, N. (2006). The intrinsic frequency response of 1.3-μm InGaAsN lasers in the range T = 10 °C-80 °C. IEEE Photonics Technology Letters, 18(16), 1774-1776. Scopus12 WoS11 |
| 2006 | Yeh, J. Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., & Tansu, N. (2006). Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells. Applied Physics Letters, 88(5), 1-3. Scopus26 WoS25 |
| 2006 | Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2006). Optical determination of the electron effective mass of strain compensated In 0.4Ga 0.6As 0.995N 0.005/GaAs single quantum well. Applied Physics Letters, 89(17), 3 pages. Scopus15 WoS15 |
| 2006 | Demirkesen, O., Önal, B., Tansu, N., Altintaş, R., Yalçin, V., & Öner, A. (2006). Efficacy of extracorporeal shock wave lithotripsy for isolated lower caliceal stones in children compared with stones in other renal locations. Urology, 67(1), 170-174. Scopus64 Europe PMC49 |
| 2005 | Tansu, N., & Mawst, L. J. (2005). Current injection efficiency of InGaAsN quantum-well lasers. Journal of Applied Physics, 97(5), 18 pages. Scopus139 WoS133 |
| 2005 | Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., . . . Tansu, N. (2005). Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics, 98(12), 5 pages. Scopus7 WoS7 |
| 2005 | Thränhardt, A., Kuznetsova, I., Schlichenmaier, C., Koch, S. W., Shterengas, L., Belenky, G., . . . Chow, W. W. (2005). Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory. Applied Physics Letters, 86(20), 1-3. Scopus45 WoS38 |
| 2005 | Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters, 86(7), 1-3. Scopus29 WoS26 |
| 2005 | Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers. IEEE Photonics Technology Letters, 17(9), 1779-1781. Scopus9 WoS7 |
| 2005 | Lai, F. I., Kuo, H. C., Chang, Y. H., Tsai, M. Y., Chu, C. P., Kuo, S. Y., . . . Mawst, L. J. (2005). Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (A = 1.28-1.45 μm) with GaAsP strain-compensated layers. Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers, 44(8), 6204-6207. Scopus4 WoS4 |
| 2005 | Anton, O., Menoni, C. S., Yeh, J. Y., Mawst, L. J., Pikal, J. M., & Tansu, N. (2005). Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements. IEEE Photonics Technology Letters, 17(5), 953-955. Scopus12 WoS11 |
| 2004 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2004). Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition. Journal of Physics Condensed Matter, 16(31), S3277-S3318. Scopus63 WoS60 |
| 2004 | Tansu, N., Öbek, C., Önal, B., Yalçin, V., Öner, A., & Solok, V. (2004). A Simple Position to Provide Better Imaging of Upper Ureteral Stones Close to the Crista Iliaca during Extracorporeal Shock Wave Lithotripsy Using the Siemens Lithostar. European Urology, 45(3), 352-355. Scopus3 Europe PMC3 |
| 2004 | Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2004). InP-based dilute-nitride mid-infrared type-II "W" quantum-well lasers. Journal of Applied Physics, 96(8), 4653-4655. Scopus38 WoS36 |
| 2004 | Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm. Electronics Letters, 40(12), 739-741. Scopus19 WoS17 |
| 2004 | Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Effects of growth pause on the structural and optical properties of InGaAsN-InGaAsP quantum well. Journal of Crystal Growth, 265(1-2), 1-7. Scopus1 WoS2 |
| 2004 | Yeh, J. Y., Tansu, N., & Mawst, L. J. (2004). Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers. IEEE Photonics Technology Letters, 16(3), 741-743. Scopus19 WoS20 |
| 2004 | Önal, B., Demirkesen, O., Tansu, N., Kalkan, M., Altintaş, R., & Yalçin, V. (2004). The impact of caliceal pelvic anatomy on stone clearance after shock wave lithotripsy for pediatric lower pole stones. Journal of Urology, 172(3), 1082-1086. Scopus62 Europe PMC36 |
| 2003 | Kalkan, M., Önal, B., Demirkesen, O., Uzun, H., Tansu, N., & Yalçin, V. (2003). The efficacy of ESWL for pediatric ureteral stones. Turk Uroloji Dergisi, 29(2), 180-184. Scopus1 |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition. IEEE Journal on Selected Topics in Quantum Electronics, 9(5), 1220-1227. Scopus78 WoS74 |
| 2003 | Tansu, N., & Mawst, L. J. (2003). Design analysis of 1550-nm GaAsSb-(In)GaAsN type-II quantum-well laser active regions. IEEE Journal of Quantum Electronics, 39(10), 1205-1210. Scopus45 WoS40 |
| 2003 | Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2003). (In)GaAsN-based type-II "W" quantum-well lasers for emission at λ = 1.55 μm. Applied Physics Letters, 83(14), 2742-2744. Scopus59 WoS57 |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers. Applied Physics Letters, 83(13), 2512-2514. Scopus87 WoS76 |
| 2003 | Tansu, N., Quandt, A., Kanskar, M., Mulhearn, W., & Mawst, L. J. (2003). High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy. Applied Physics Letters, 83(1), 18-20. Scopus59 WoS58 |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm. Applied Physics Letters, 82(23), 4038-4040. Scopus78 WoS71 |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing. Applied Physics Letters, 82(18), 3008-3010. Scopus24 WoS24 |
| 2003 | Tansu, N., & Mawst, L. J. (2003). The role of hole leakage in 1300-nm InGaAsN quantum-well lasers. Applied Physics Letters, 82(10), 1500-1502. Scopus73 WoS66 |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Experimental evidence of carrier leakage in InGaAsN quantum-well lasers. Applied Physics Letters, 83(11), 2112-2114. Scopus74 WoS65 |
| 2002 | Tansu, N., & Mawst, L. J. (2002). Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers. IEEE Photonics Technology Letters, 14(8), 1052-1054. Scopus60 WoS58 |
| 2002 | Tansu, N., Kirsch, N. J., & Mawst, L. J. (2002). Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers. Applied Physics Letters, 81(14), 2523-2525. Scopus166 WoS148 |
| 2002 | Tansu, N., & Mawst, L. J. (2002). Low-threshold strain-compensated InGaAs(N) (λ = 1.19-1.31 μm) quantum-well lasers. IEEE Photonics Technology Letters, 14(4), 444-446. Scopus112 WoS102 |
| 2002 | Tansu, N. (2002). Nitrogen lowers threshold current in quantum-well lasers. LASER FOCUS WORLD, 38(12), 9. |
| 2002 | Tansu, N., Chang, Y. L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R. T., & Mawst, L. J. (2002). Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers. IEEE Journal of Quantum Electronics, 38(6), 640-651. Scopus57 WoS48 |
| 2001 | Tansu, N., & Mawst, L. J. (2001). High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers. IEEE Photonics Technology Letters, 13(3), 179-181. Scopus88 WoS80 |
| 2001 | Demirkesen, O., Yaycioglu, O., Onal, B., Kalkan, M., Tansu, N., Yalcin, V., . . . Solok, V. (2001). Extracorporeal shockwave lithotripsy for stones in abnormal urinary tracts: Analysis of results and comparison with normal urinary tracts. Journal of Endourology, 15(7), 681-685. Scopus24 |
| 2001 | Öbek, C., Önal, B., Kantay, K., Kalkan, M., Yalçin, V., Öner, A., . . . Tansu, N. (2001). The efficacy of extracorporeal shock wave lithotripsy for isolated lower pole calculi compared with isolated middle and upper caliceal calculi. Journal of Urology, 166(6), 2081-2085. Scopus79 Europe PMC54 |
| 2000 | Tansu, N., Zhou, D., & Mawst, L. J. (2000). Low-temperature sensitive, compressively strained InGaAsP active (λ = 0.78-0.85 μm) region diode lasers. IEEE Photonics Technology Letters, 12(6), 603-605. Scopus23 WoS23 |
| 1999 | Demirkesen, O., Tansu, N., Yaycioglu, O., Onal, B., Yalcin, V., & Solok, V. (1999). Extracorporeal shockwave lithotripsy in the pediatric population. Journal of Endourology, 13(3), 147-150. Scopus48 Europe PMC33 |
| Year | Citation |
|---|---|
| 2016 | Meyyappan, M., Pelesko, J., Giurgiutiu, V., Lyshevski, S. E., Tansu, N., Arif, R., & Jin, Z. (2016). Materials and nanoscience. In R. C. Dorf (Ed.), Sensors, Nanoscience, Biomedical Engineering, and Instruments (Vol. e-book, 1 ed., pp. 4-1-4-90). Bosa Roca, USA: Taylor & Francis Inc. |
| 2011 | Mawst, L. J., & Tansu, N. (2011). Quantum-Well Lasers and Their Applications. In Comprehensive Semiconductor Science and Technology (Vol. 1-6, pp. 626-682). Elsevier. DOI Scopus3 |
| 2008 | Arif, R. A., & Tansu, N. (2008). Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers. In Springer Series in Materials Science (Vol. 105, pp. 503-524). Springer Berlin Heidelberg. DOI Scopus1 |
| 2008 | Tansu, N., & Mawst, L. J. (2008). Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition. In Springer Series in Materials Science (Vol. 105, pp. 449-501). Springer Berlin Heidelberg. DOI Scopus1 |
| Year | Citation |
|---|---|
| 2025 | Pasayat, S. S., Lin, Q., Liu, C., Wang, G., Sanyal, S., Dwyer, M., . . . Gupta, C. (2025). High-efficiency UV-A Lasers Using GaN Waveguides on Native GaN Substrates. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 13385 (pp. 1). SPIE. DOI |
| 2025 | Lin, Q., Liu, C., Wang, G., Sanyal, S., Dwyer, M., Seitz, M., . . . Pasayat, S. S. (2025). High Power (Over 3W) 376 nm III-Nitride Laser Diode with Unintentionally Doped GaN Waveguide. In E. P. Zucker, J. Campbell, & M. S. Zediker (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 13345 (pp. 9). San Francisco, USA: SPIE. DOI Scopus1 WoS1 |
| 2024 | Seitz, M., Boisvere, J., Melanson, B., Liu, C., Lin, Q., Wang, G., . . . Zhang, J. (2024). Demonstration of Ultraviolet III-Nitride Laser Diode with an Asymmetric Waveguide Structure. In H. Fujioka, H. Morkoc, & U. T. Schwarz (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 12886 (pp. 6 pages). CA, San Francisco: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus2 WoS1 |
| 2024 | Liu, C., Lin, Q., Wang, G., Sanyal, S., Mukhopadhyay, S., Zhang, S., . . . Mawst, L. (2024). High-Power Operation of 376 nm Laser with GaN Waveguide. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 2 pages). Orlando, FL, USA: IEEE. DOI |
| 2022 | Liu, C., Seitz, M., Dwyer, M., Kirch, J., Pasayat, S. S., Tansu, N., . . . Mawst, L. (2022). Optimization of Violet Emitting Quantum Wells with Insertion of AlGaN Layers and Temperature Ramp-up. In 2022 Compound Semiconductor Week, CSW 2022 (pp. 1-2). Online: IEEE. DOI |
| 2021 | Liang, W., Ogidi-Ekoko, O. N., Fu, H., & Tansu, N. (2021). Inverse Design of InGaN/GaN Quantum Wells. In 2021 IEEE Photonics Conference, IPC 2021 - Proceedings (pp. 1-2). online: IEEE. DOI |
| 2021 | Fu, H., Sun, W., Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2021). Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers. In 2021 IEEE Photonics Conference, IPC 2021 - Proceedings (pp. 1-2). online: IEEE. DOI |
| 2020 | Witjaksono, G., Ullah, Z., Nawi, I. B., Tansu, N., Khattak, M. I., & Junaid, M. (2020). Absorption enhancement of tunable terahertz hybrid graphene-metal antenna with stacked graphene configuration. In Proceedings of the IEEE 8th International Conference on Photonics (ICP 2020) (pp. 15-17). online: IEEE. DOI Scopus1 |
| 2020 | Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2020). P-type Doping of Dilute-Anion III-Nitride Materials. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings (pp. 1-2). online: IEEE. DOI |
| 2020 | Fu, H., Goodrich, J. C., & Tansu, N. (2020). Band alignment of nearly lattice-matched ScAlN/GaN heterojunction. In Proceedings of the 2020 IEEE Photonics Conference (IPC) (pp. 1-2). online: IEEE. DOI Scopus1 WoS1 |
| 2020 | Ogidi-Ekoko, O. N., Liang, W., Xue, H., & Tansu, N. (2020). GaN Subwavelength Gratings by Machine Learning Design. In 2020 IEEE Photonics Conference, IPC 2020 - Proceedings (pp. 1-2). online: IEEE. DOI |
| 2019 | Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2019). Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings (pp. 2 pages). San Antonio, TX: IEEE. DOI |
| 2019 | Fu, H., Goodrich, J. C., & Tansu, N. (2019). Gain Properties of Type-II AlInN / ZnGeN<inf>2</inf> Quantum Wells for Ultraviolet Laser Diodes. In 2019 IEEE Photonics Conference, IPC 2019 - Proceedings (pp. 1-2). online: IEEE. DOI |
| 2018 | Goodrich, J. C., Borovac, D., Tan, C. K., & Tansu, N. (2018). Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 2 pages). Online: IEEE. DOI |
| 2018 | Fragkos, I. E., Borovac, D., Sun, W., Song, R., Wierer, J. J., & Tansu, N. (2018). Experimental Studies of Delta-InN Incorporation in InGaN Quantum Well for Long Wavelength Emission. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI Scopus1 |
| 2018 | Borovac, D., Sun, W., Tan, C. K., & Tansu, N. (2018). Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI |
| 2018 | Fu, H., Sun, W., Ogidi-Ekoko, O., & Tansu, N. (2018). Gain Properties of InGaN Quantum Wells with AlGaInN Barriers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI |
| 2018 | Wei, X., Muyeed, S. A. A., Peart, M., Tansu, N., & Wierer, J. J. (2018). Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI |
| 2018 | Sun, W., Kim, H., Mawst, L. J., & Tansu, N. (2018). Interplay of Strain Compensation and Relaxation in High-Performance InGaAs Quantum Well Lasers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI WoS1 |
| 2018 | Fragkos, I. E., & Tansu, N. (2018). Titanium Nitride Surface Plasmon Coupling for Enhanced IQE in GaN:Eu Red Light Emitters. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI |
| 2018 | Muyeed, S. A. A., Sun, W., Wei, X., Song, R., Koleske, D., Tansu, N., & Wierer, J. J. (2018). Improvement in the Radiative Efficiency of InGaN-Based Multiple Quantum Wells using AlGaN Interlayers. In P. Winzer, H. K. Tsang, J. Capmany, J. Yao, N. Fontaine, & N. Dutta (Eds.), 31st Annual Conference of the IEEE Photonics Society, IPC 2018 (pp. 1-2). online: IEEE. DOI |
| 2017 | Reid, E. T., & Tansu, N. (2017). Analysis of integrated tunable III-nitride lasers with dual distributed Bragg reflectors. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 167-168). online: IEEE. DOI |
| 2017 | Borovac, D., Tan, C. K., & Tansu, N. (2017). Investigation of refractive index in dilute-P GaNP alloys by first-principle. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 257-258). online: IEEE. DOI Scopus1 WoS1 |
| 2017 | Sun, W., Tan, C. K., & Tansu, N. (2017). Lattice-matched AlInN/GaN digital alloy for mid- and deep-ultraviolet applications. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 255-256). online: IEEE. DOI |
| 2017 | Slosberg, A. M., & Tansu, N. (2017). Design analysis of subwavelength grating mirror for GaN based VCSELs structure. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 231-232). online: IEEE. DOI Scopus1 WoS1 |
| 2017 | Tansu, N. (2017). High efficiency III-Nitride LEDs. In Optics InfoBase Conference Papers Vol. Part F72-SSL 2017 (pp. SM3B.3). OSA. DOI |
| 2017 | Tan, C. K., Borovac, D., Sun, W., & Tansu, N. (2017). Dilute-anion boron nitride semiconductor for light emitters. In 2017 IEEE Photonics Conference (IPC) Vol. 2017-January (pp. 59-60). Online: IEEE. DOI WoS2 |
| 2017 | Fragkos, I. E., Tan, C. K., Dierolf, V., Fujiwara, Y., & Tansu, N. (2017). Engineering the internal qnantnm efficiency of GaN:En based red light emitting diodes. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 Vol. 2017-January (pp. 275-276). online: IEEE. DOI |
| 2017 | Tan, C. K., Sun, W., Borovac, D., Wierer, J. J., & Tansu, N. (2017). Dilute-Anion III-nitride: A potential visible light emitter. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 834-835). online: IEEE. DOI |
| 2015 | Tan, C. K., & Tansu, N. (2015). Dilute-As AlNAs semiconductor for ultraviolet emitters. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 521-522). Reston, VA: IEEE. DOI |
| 2015 | Sun, W., Tan, C. K., & Tansu, N. (2015). Artificially-engineered InGaN-based digital alloy for optoelectronics. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 519-520). Reston, VA: IEEE. DOI |
| 2015 | Tansu, N., Tan, C. K., & Wierer, J. J. (2015). Tutorial on III-Nitride solid state lighting and smart lighting. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 26-27). Reston, VA: IEEE. DOI |
| 2015 | Tan, C. K., & Tansu, N. (2015). Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 577-578). Reston, VA: IEEE. DOI Scopus4 |
| 2014 | Onal, B., Dogan, C., Ozkan, B., Tansu, N., Can, G. E., & Erozenci, A. (2014). THE USING OF STENT ACCORDING TO STONE BURDEN IN PELVIS RENALIS CALCULI TREATED WITH ESWL: USE IT OR NOT ?. In JOURNAL OF UROLOGY Vol. 191 (pp. E279). Orlando, FL: ELSEVIER SCIENCE INC. DOI |
| 2013 | Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 (pp. 2 pages). San Jose, CA: IEEE. DOI |
| 2013 | Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013. |
| 2013 | Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2013). Complementing trends of photoluminescence and terahertz intensities in staggered InGaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2013. |
| 2012 | Zhao, H., Jiao, X., & Tansu, N. (2012). Analysis of position and thickness dependences of delta layer in InGaN-delta-InN quantum wells light-emitting diodes. In Asia Communications and Photonics Conference, ACP (pp. ATh1F.2). OSA. DOI Scopus2 |
| 2012 | Zhu, P., Zhang, J., Liu, G., & Tansu, N. (2012). FDTD modeling of InGaN-based light-emitting diodes with microsphere arrays. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 433-434). Burlingame, CA: IEEE. DOI Scopus1 |
| 2012 | Zhang, J., & Tansu, N. (2012). Gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 604-605). Burlingame, CA: IEEE. DOI |
| 2012 | Liu, G., Zhang, J., Tan, C. K., & Tansu, N. (2012). Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 431-432). Burlingame, CA: IEEE. DOI |
| 2012 | Tan, C. K., Zhang, J., Li, X. H., Liu, G., & Tansu, N. (2012). Dilute-As GaNAs semiconductor for visible emitters. In 2012 IEEE Photonics Conference, IPC 2012 (pp. 695-696). Burlingame, CA: IEEE. DOI |
| 2012 | Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012. |
| 2012 | Liu, G., Zhang, J., Zhao, H., & Tansu, N. (2012). Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 8262 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2012 | Sun, G., Chen, R., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2012). Strikingly different behaviors of photoluminescence intensity and terahertz output power versus period of InGaN/GaN quantum wells. In CLEO: Science and Innovations, CLEO_SI 2012 (pp. 2 pages). San Jose, CA: IEEE. DOI |
| 2012 | Tansu, N., Zhang, J., Liu, G., Zhao, H., Tan, C. K., & Zhu, P. (2012). Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes. In Asia Communications and Photonics Conference, ACP 2012 (pp. AS3F.1). OSA. DOI |
| 2012 | Zhang, J., Tong, H., Liu, G., & Tansu, N. (2012). III-nitride based thermoelectric - current status and future potential. In Asia Communications and Photonics Conference, ACP 2012 (pp. AF3F.4). OSA. DOI |
| 2012 | Koo, W., Yun, W., Zhu, P., Li, X. H., Tansu, N., & So, F. (2012). Light extraction of phosphorescent oleds by defective hexagonal-close-packed array. In Digest of Technical Papers SID International Symposium Vol. 43 (pp. 1474-1476). Wiley. DOI |
| 2012 | Onal, B., Citgez, S., Tansu, N., Demirdag, C., Dogan, C., Gonul, B., . . . Erozenci, A. (2012). PREDICTIVE FACTORS AND THE MANAGEMENT OF STEINSTRASSE AFTER SHOCK WAVE LITHOTRIPSY IN PEDIATRIC UROLITHIASIS-A MULTIVARIATE ANALYSIS STUDY. In JOURNAL OF ENDOUROLOGY Vol. 26 (pp. A344). MARY ANN LIEBERT, INC. |
| 2012 | Onal, B., Tansu, N., Demirkesen, O., Yalcin, V., Huang, L., Nguyen, H. T., . . . Erozenci, A. (2012). NOMOGRAM FOR PREDICTING STONE-FREE STATUS AFTER SHOCK WAVE LITHOTRIPSY IN CHILDREN WITH UROLITHIASIS. In JOURNAL OF ENDOUROLOGY Vol. 26 (pp. A343). MARY ANN LIEBERT, INC. |
| 2012 | Zhang, J., Zhao, H., & Tansu, N. (2012). Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers. In A. A. Belyanin, & P. M. Smowton (Eds.), NOVEL IN-PLANE SEMICONDUCTOR LASERS XI Vol. 8277 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2011 | Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. |
| 2011 | Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 (pp. CMEE6). OSA. DOI Scopus1 |
| 2011 | Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 (pp. CMM4). OSA. DOI |
| 2011 | Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. |
| 2011 | Cao, W., Biser, J. M., Ee, Y. K., Li, X. H., Tansu, N., Chan, H. M., & Vinci, R. P. (2011). Dislocation structure of GaN films grown on planar and nano-patterned sapphire. In Journal of Applied Physics Vol. 110 (pp. 4 pages). AMER INST PHYSICS. DOI Scopus23 WoS21 |
| 2011 | Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. |
| 2011 | Zhang, J., Zhao, H., & Tansu, N. (2011). Gain characteristics of deep UV AlGaN quantum wells lasers. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7953 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2011 | Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Vol. 47 (pp. 870-877). IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. DOI WoS22 |
| 2011 | Zhang, J., Tong, H., Liu, G., Herbsommer, J. A., Huang, G. S., & Tansu, N. (2011). Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7939 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus2 WoS1 |
| 2011 | Zhang, J., Tong, H., Herbsommer, J. A., & Tansu, N. (2011). Analysis of thermoelectric properties of AlInN semiconductor alloys. In B. Witzigmann, F. Henneberger, Y. Arakawa, & A. Freundlich (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7933 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2011 | Zhao, H., Zhang, J., Liu, G., Toma, T., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2011). Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes. In J. I. Chyi, Y. Nanishi, H. Morkoc, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7939 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2011 | Tansu, N., Zhao, H., Zhang, J., Liu, G., Li, X. H., Ee, Y. K., . . . Huang, G. S. (2011). Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering. In K. P. Streubel, L. W. Tu, H. Jeon, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7954 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus3 |
| 2011 | Liu, G., Zhao, H., Zhang, J., Park, J. H., Mawst, L. J., & Tansu, N. (2011). Selective area epitaxy of ultra-high density InGaN based quantum dots. In 2011 IEEE Winter Topicals, WTM 2011 (pp. 35-36). IEEE. DOI Scopus1 |
| 2011 | Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au / Ag layers for nitride light-emitting diodes. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. Scopus3 |
| 2011 | Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN multiple quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. DOI |
| 2011 | Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Fabrication of self-assembled silica/polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. DOI |
| 2011 | Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-Delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. DOI |
| 2011 | Zhao, H., Zhang, J., Liu, G., & Tansu, N. (2011). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. |
| 2011 | Ferguson, J. W., Blood, P., Smowton, P. M., Bae, H., Sarmiento, T., Harris, J. S., . . . Mawst, L. J. (2011). Optical gain in GaInNAs and GaInNAsSb quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. |
| 2011 | Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple Quantum Wells. In Optics InfoBase Conference Papers. |
| 2011 | Sun, G., Xu, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. |
| 2011 | Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-polarized optical gain from AlGaN-Delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers. |
| 2011 | Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In Optics InfoBase Conference Papers (pp. 2 pages). Baltimore, MD: IEEE. |
| 2011 | Xu, G., Sun, G., Ding, Y. J., Zhao, H., Liu, G., Zhang, J., & Tansu, N. (2011). Investigation of blueshift of photoluminescence emission peak in InGaN/GaN Multiple quantum wells. In Optics InfoBase Conference Papers. Scopus1 |
| 2011 | Zhang, J., Zhao, H., & Tansu, N. (2011). High TE-Polarized optical gain from AlGaN-delta-GaN quantum well for deep UV lasers. In Optics InfoBase Conference Papers. |
| 2011 | Li, X. H., Ee, Y. K., Song, R., & Tansu, N. (2011). Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO<inf>2</inf> microsphere arrays. In K. P. Streubel, L. W. Tu, H. Jeon, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7954 (pp. 5 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2011 | Tansu, N., Zhang, J., & Zhao, H. (2011). Physics of novel III-nitride gain media for visible and ultraviolet lasers. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 509-510). Arlington, VA: IEEE. DOI |
| 2011 | Xu, L. F., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2011). Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers. In IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp. 682-683). Arlington, VA: IEEE. DOI |
| 2010 | Ee, Y. K., Li, X. H., Biser, J. M., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 (pp. CMB2). OSA. DOI |
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| 2010 | Sun, G., Tripathy, S. K., Ding, Y. J., Liu, G., Huang, G. S., Zhao, H., . . . Khurgin, J. B. (2010). Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE. |
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| 2010 | Liu, G., Zhao, H., Park, J. H., Mawst, L. J., & Tansu, N. (2010). Growths of ultra high density ingan-based quantum dots on self-assembled diblock copolymer nanopatterns. In Optics InfoBase Conference Papers (pp. 2 pages). San Jose, CA: IEEE. DOI |
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| 2010 | Zhang, J., Zhao, H., & Tansu, N. (2010). Gain and spontaneous emission characteristics of high Al-content AlGaN quantum well lasers. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 63-64). Denver, CO: IEEE. DOI |
| 2010 | Liu, G., Zhao, H., Zhang, J., Tong, H., Huang, G. S., & Tansu, N. (2010). Growths of lattice-matched AlInN / GaN for optoelectronics applications. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 534-535). Denver, CO: IEEE. DOI |
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| 2010 | Zhao, H., Liu, G., & Tansu, N. (2010). Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes. In K. P. Streubel, H. Joen, L. W. Tu, & N. Linder (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7617 (pp. 6 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2010 | Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. In K. P. Streubel, H. Joen, L. W. Tu, & N. Linder (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 7617 (pp. 8 pages). CA, San Francisco: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
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| 2010 | Zhao, H., Zhang, J., Toma, T., Liu, G., Poplawsky, J. D., Dierolf, V., & Tansu, N. (2010). Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 532-533). Denver, CO: IEEE. DOI |
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| 2010 | Li, X. H., Tong, H., Zhao, H., & Tansu, N. (2010). Band structure calculation of dilute-As GaNAs by first principle. In B. Witzigmann, F. Henneberger, Y. Arakawa, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7597 (pp. 8 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus1 WoS1 |
| 2010 | Tong, H., Zhang, J., Zhao, H., Liu, G., Handara, V. A., Herbsommer, J. A., & Tansu, N. (2010). Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/sapphire by 3ω method. In J. I. Chyi, Y. Nanishi, H. Morkoc, C. W. Litton, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7602 (pp. 9 pages). San Francisco, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus3 WoS2 |
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| 2009 | Zhao, H., Arif, R. A., & Tansu, N. (2009). Staggered InGaN quantum well diode lasers emitting at 500 nm. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7230 (pp. 7 pages). CA, San Jose: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
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| 2009 | Zhao, H., Tong, H., Driscoll, A. M., Jamil, M., Huang, G. S., & Tansu, N. (2009). Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy. In H. Morkoc, C. W. Litton, J. I. Chyi, Y. Nanishi, J. Piprek, & E. Yoon (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7216 (pp. 6 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus1 WoS1 |
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| 2009 | Zhao, H., Liu, G., Arif, R. A., & Tansu, N. (2009). Effect of current injection efficiency on efficiency-droop in InGaN quantum well light-emitting diodes. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 (pp. 1-2). IEEE. DOI Scopus2 |
| 2009 | Xu, G., Ding, Y. J., Zhao, H., Jamil, M., Tansu, N., Zotova, I. B., . . . Speck, J. S. (2009). THz generation from InN films based on interference between optical rectification and photocurrent surge. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 (pp. CTuG5). OSA. DOI |
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| 2009 | Tong, H., Zhao, H., Handara, V. A., Herbsommer, J. A., & Tansu, N. (2009). Analysis of Thermoelectric Characteristics of AlGaN and InGaN Semiconductors. In M. Osinski, B. Witzigmann, & F. Henneberger (Eds.), Proceedings of SPIE - The International Society for Optical Engineering Vol. 7211 (pp. 11 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus23 WoS12 |
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| 2008 | Ee, Y. K., Kumnorkaew, P., Arif, R. A., Tong, H., Gilchrist, J. F., & Tansu, N. (2008). Size effects and light extraction efficiency optimization of III-nitride light emitting diodes with SiO<inf>2</inf> / polystyrene microlens arrays. In Optics InfoBase Conference Papers (pp. 604-+). San Jose, CA: IEEE. |
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| 2007 | Arif, R. A., Tummidi, R. S., Yik, K. E., & Tansu, N. (2007). Design analysis of lattice-matched AlInGaN-GaN QW for optimized intersubband absorption in the mid-IR regime. In M. Osinski, F. Henneberger, & Y. Arakawa (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 6468 (pp. 9 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2006 | Jin, Z., & Tansu, N. (2006). Novel approach for efficient mid-infrared coherent emitters based on continuously-phase-matched 'W' optical waveguide. In M. Osinski, F. henneberger, & Y. Arakawa (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 6115 (pp. 10 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2006 | Arif, R. A., Ee, Y. K., & Tansu, N. (2006). Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN. In M. Osinski, F. henneberger, & Y. Arakawa (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 6115 (pp. 11 pages). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2006 | Xu, L., Patel, D., Menoni, C. S., Yeh, J. Y., Huang, J. Y. T., Mawst, L. J., & Tansu, N. (2006). Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS (pp. 58-59). CANADA, Montreal: IEEE. DOI Scopus1 |
| 2006 | Arif, R. A., Ee, Y. K., & Tansu, N. (2006). Polarization field engineering with type-II InGaN-GaNAs quantum well for improved nitride gain media at 420-550 nm. In Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006 (pp. 1-2). IEEE. DOI |
| 2006 | Mawst, L. J., Yeh, J. Y., Xu, D. P., Park, J. H., Huang, J., Khandekar, A., . . . Meyer, J. R. (2006). InGaAsN/GaAsSb/GaAs(P) Type-II 'W' quantum well lasers. In Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006 (pp. 1-2). IEEE. DOI |
| 2006 | Jin, Z., Tummidi, R. S., Gupta, Y. P., Schindler, D. M., & Tansu, N. (2006). Quasi-guided-optical-waveguide VCSELs for single-mode high-power applications. In Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006 (pp. 1-2). IEEE. DOI |
| 2006 | Xu, L., Patel, D., Vaschenko, G., Antón, O., Menoni, C. S., Yeh, J. Y., . . . Tansu, N. (2006). Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells. In Optics Infobase Conference Papers. |
| 2006 | Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2006). Effect of nitrogen content and temperature on the f3dB of 1.3μm Dilute-Nitride SQW Lasers. In Optics Infobase Conference Papers. |
| 2006 | Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2006). The Effect of Temperature on the Efficiency of InGaAs and InGaAsN Quantum Well Laser structures.. In Optics Infobase Conference Papers. |
| 2006 | Arif, R. A., & Tansu, N. (2006). Interdiffused SbN-based quantum well on GaAs for 1300-1550 nm diode lasers. In L. J. Olafsen, R. M. Biefeld, M. C. Wanke, & A. W. Saxler (Eds.), Materials Research Society Symposium Proceedings Vol. 891 (pp. 559-564). MA, Boston: MATERIALS RESEARCH SOC. Scopus2 |
| 2006 | Arif, R. A., Kim, N. H., Mawst, L. J., & Tansu, N. (2006). Interdiffused InGaAsP quantum dots lasers on GaAs by metal organic chemical vapor deposition. In L. J. Olafsen, R. M. Biefeld, M. C. Wanke, & A. W. Saxler (Eds.), Materials Research Society Symposium Proceedings Vol. 891 (pp. 65-70). MA, Boston: MATERIALS RESEARCH SOC. WoS1 |
| 2006 | Yeh, J. Y., Mawst, L. J., Khandekar, A. A., Kuech, T. F., Vurgaftman, I., Meyer, J. R., & Tansu, N. (2006). Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells. In Journal of Crystal Growth Vol. 287 (pp. 615-619). MT, Big Sky: ELSEVIER. DOI Scopus26 WoS24 |
| 2005 | Shterengas, L., Belenky, G. L., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers. In IEEE Journal on Selected Topics in Quantum Electronics Vol. 11 (pp. 1063-1068). JAPAN, Matsue: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. DOI Scopus10 WoS9 |
| 2005 | Anton, O. H., Patel, D., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., . . . Tansu, N. (2005). Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers. In IEEE Journal on Selected Topics in Quantum Electronics Vol. 11 (pp. 1079-1088). JAPAN, Matsue: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. DOI Scopus6 WoS3 |
| 2005 | Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2005). Effect of nitrogen content and temperature on the f3dB of 1.3μm Dilute-Nitride SQW Lasers. In Optics Infobase Conference Papers (pp. 92-94). MD, Baltimore: Optica Publishing Group. |
| 2005 | Xu, L., Patel, D., Vaschenko, G., Antón, O., Menoni, C. S., Yeh, J. Y., . . . Tansu, N. (2005). Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells. In Optics Infobase Conference Papers (pp. 2134-2136). MD, Baltimore: Optica Publishing Group. |
| 2005 | Mawst, L. J., Yeh, J. Y., & Tansu, N. (2005). Characteristics of dilute-nitride quantum well lasers. In 2005 Conference on Lasers and Electro Optics CLEO Vol. 1 (pp. 98-100). MD, Baltimore: Optica Publishing Group. DOI Scopus1 |
| 2005 | Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). The Effect of Temperature on the Efficiency of InGaAs and InGaAsN Quantum Well Laser structures.. In Optics Infobase Conference Papers (pp. 101-103). MD, Baltimore: Optica Publishing Group. |
| 2005 | Meyer, J. R., Vurgaftman, I., Khandekar, A. A., Hawkins, B. E., Yeh, J. Y., Mawst, L. J., . . . Tansu, N. (2005). Dilute nitride type-II "W" quantum well lasers for the near-infrared and mid-infrared. In C. Mermelstein, & D. P. Bour (Eds.), Progress in Biomedical Optics and Imaging Proceedings of SPIE Vol. 5738 (pp. 109-119). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus3 WoS3 |
| 2005 | Arif, R. A., & Tansu, N. (2005). Interdiffused InGaAsSbN quantum wells on GaAs for 1300-1550 nm lasers. In M. Osinski, F. Henneberger, & H. Amano (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 5722 (pp. 171-182). San Jose, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2005 | Mawst, L. J., Yeh, J. Y., Van Roy, T., & Tansu, N. (2005). Characteristics of MOCVD-grown dilute-nitride quantum well lasers. In C. Mermelstein, & D. P. Bour (Eds.), Progress in Biomedical Optics and Imaging Proceedings of SPIE Vol. 5738 (pp. 192-203). CA, San Jose: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus4 WoS2 |
| 2005 | Xu, L., Patel, D., Vaschenko, G., Antón, O., Menoni, C. S., Yeh, J. Y., . . . Tansu, N. (2005). Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells. In 2005 Conference on Lasers and Electro Optics CLEO Vol. 3 (pp. 2134-2136). |
| 2005 | Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2005). Effect of nitrogen content and temperature on the f 3dB of 1.3μm Dilute-Nitride SQW Lasers. In 2005 Conference on Lasers and Electro Optics CLEO Vol. 1 (pp. 92-94). |
| 2005 | Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2005). The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures. In 2005 Conference on Lasers and Electro Optics CLEO Vol. 1 (pp. 101-103). IEEE. DOI Scopus2 |
| 2004 | Anton, O., Patel, D., Menoni, C. S., Yeh, J. Y., Mawst, L., Pikal, J. M., & Tansu, N. (2004). Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (λ=1.2-1.3μm) lasers. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 607-610). |
| 2004 | Vurgaftman, I., Meyer, J. R., Tansu, N., & Mawst, L. J. (2004). Dilute-nitride mid-infrared type-II "W" quantum-well lasers on InP substrates. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 621-623). |
| 2004 | Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). The effect of Nitrogen in InGaAsN quantum well lasers. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 611-612). |
| 2004 | Shterengas, L., Yeh, J. Y., Mawst, L. J., Tansu, N., & Belenky, G. (2004). Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers. In OSA Trends in Optics and Photonics Series Vol. 96 A (pp. 615-616). |
| 2004 | Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). Carrier transport and injection efficiency of InGaAsN quantum-well lasers. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 2 (pp. 693-694). Rio Grande, PR: IEEE. |
| 2004 | Anton, O., Menoni, C. S., Yeh, J. Y., Van Roy, T. T., Mawst, L. J., & Tansu, N. (2004). The 3dB bandwidth of strain-compensated dilute-nitride quantum-well lasers. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 2 (pp. 697-698). Rio Grande, PR: IEEE. |
| 2004 | Yeh, J. Y., Mawst, L. J., & Tansu, N. (2004). Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime. In Journal of Crystal Growth Vol. 272 (pp. 719-725). Lahaina, HI: ELSEVIER. DOI Scopus9 WoS9 |
| 2003 | Yeh, J. Y., Tansu, N., & Mawst, L. J. (2003). Temperature sensitivity of 1360 nm InGaAsN quantum well lasers. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 1 (pp. 41-42). TUCSON, AZ: IEEE. |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Carrier confinement in 1300-nm InGaAsN quantum-well lasers. In OSA Trends in Optics and Photonics Series Vol. 88 (pp. 526-527). |
| 2003 | Tansu, N., Mawst, L. J., Vurgaftman, I., & Meyer, J. R. (2003). GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 1 (pp. 37-38). TUCSON, AZ: IEEE. |
| 2003 | Yeh, J. Y., Tansu, N., & Mawst, L. J. (2003). Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers. In Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp. 269-272). SANTA BARBARA, CA: IEEE. Scopus2 |
| 2003 | Mawst, L. J., Tansu, N., & Yeh, J. Y. (2003). MOCVD-Grown InGaAsN Quantum-Well Lasers. In C. F. Gmachi, & D. P. Bour (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 4995 (pp. 39-53). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2003 | Tansu, N., Yeh, J. Y., & Mawst, L. J. (2003). Carrier Confinement in 1300-nm InGaAsN Quantum-Well Lasers. In Optics Infobase Conference Papers. |
| 2002 | Tansu, N., & Mawst, L. J. (2002). High performance 1300-nm dilute-nitride quantum well lasers by MOCVD. In Conference Digest IEEE International Semiconductor Laser Conference (pp. 33-34). |
| 2002 | Tansu, N., & Mawst, L. J. (2002). Analysis temperature of characteristics of highly-strained InGaAs-GaAsP-GaAs (λ>1.17 μm) quantum well lasers. In P. Blood, M. Osinski, & Y. Arakawa (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 4646 (pp. 302-312). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI Scopus2 |
| 2002 | Tansu, N., & Mawst, L. J. (2002). Temperature Sensitivity Analysis of High-performance InGaAs(N) (λ = 1.185 - 1.3 μm) Quantum Well Lasers. In Optics Infobase Conference Papers (pp. 269). |
| 2001 | Zhou, D., Lee, T. W., Tansu, N., Hagness, S., & Mawst, L. J. (2001). Large spot-size narrow waveguide VCSEL. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 2 (pp. 469-470). SAN DIEGO, CA: IEEE. |
| 2001 | Tansu, N., & Mawst, L. J. (2001). InGaAs/GaAsP/InGaP strain compensated quantum well (λ=1.17 μm) diode lasers on GaAs. In L. J. Maust, & R. U. Martinelli (Eds.), Proceedings of SPIE the International Society for Optical Engineering Vol. 4287 (pp. 188-194). SAN JOSE, CA: SPIE-INT SOC OPTICAL ENGINEERING. DOI |
| 2001 | Tansu, N., Chang, Y. L., Takeuchi, T., Bour, D. P., Corzine, S. W., Tan, M. R. T., & Mawst, L. J. (2001). Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (λ>1.17μm) quantum well lasers. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 1 (pp. 336-337). |
| 2000 | Tansu, N., & Mawst, L. J. (2000). Compressively-strained InGaAsP-active (λ=0.85μm) VCSELs. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 2 (pp. 724-725). PR, RIO GRANDE: IEEE. Scopus12 WoS6 |
| 1999 | Tansu, N., Zhou, D., Rusli, S., & Mawst, L. J. (1999). Compressively-strained InGaAsP-active (λ = 0.78-0.85 μm) regions for VCSELs. In Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS Vol. 2 (pp. 397-398). Scopus2 |
| Year | Citation |
|---|---|
| 2017 | Zeng, G., Yang, X., Koel, B., Borovac, D., Tan, C. K., Tansu, N., & Krick, B. (2017). Tribochemistry of GaN, a suprisingly wear resistant semiconductor. Poster session presented at the meeting of ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY. San Francisco, CA: AMER CHEMICAL SOC. |
Professor Nelson Tansu starts at The University of Adelaide in January 2021. Before this, he was a professor at Lehigh University (USA). He had received US$ 13.92 million funding to support his research works on the material synthesis, device physics, and computational nanostructures from the US National Science Foundation, US Department of Defense, US Department of Energy, and US Department of Education.
Courses Taught at The University of Adelaide [January 2021 - Present]
- To be determined.
Courses Taught at Lehigh University (Bethlehem, Pennsylvania, USA) [July 2020 - January 2021]
- Fall 2003: ECE 450-16 “Physics and Applications of Photonic Crystals”
- Spring 2004: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
- Fall 2004: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Fall 2004: ECE 257 “Senior Design Projects” (for senior undergraduate students).
- Spring 2005: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
- Spring 2005: ECE 258 “Senior Design Projects”
- Fall 2005: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Spring 2006: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2006: ECE 202 “Introduction to Engineering Electromagnetic”
- Fall 2006: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Fall 2006: ECE 308 “Physics and Models of Electronic and Optoelectronic Devices”
- Spring 2007: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2007: ECE 450-017 “Nitride Semiconductor Device Physics”
- Spring 2008: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2008: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Spring 2009: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2009: ECE 350/450-17 “Applied Quantum Mechanics for Engineers”
- Spring 2010: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2010: ECE 350/450 “Applied Quantum Mechanics for Engineers”
- Fall 2010: ECE 451 “Semiconductor Physics and Devices”
- Spring 2011: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2011: ECE 451 “Semiconductor Physics and Devices”
- Spring 2012: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2012: ECE 451 “Semiconductor Physics and Devices”
- Spring 2013: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2013: ECE 451 “Semiconductor Physics and Devices”
- Spring 2014: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2014: ECE 350/450 “Applied Quantum Mechanics for Engineers”
- Spring 2015: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2015: ECE 451 “Semiconductor Physics and Devices”
- Spring 2016: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2016: ECE 451 “Semiconductor Physics and Devices”
- Winter 2016: ECE 450 “Engineering Teaching & Research Methods”
- Spring 2017: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2017: ECE 451 “Semiconductor Physics and Devices”
- Spring 2018: ECE 203 “Introduction to Electromagnetic Waves”
- Fall 2018: ECE 350/450 “Applied Quantum Mechanics for Engineers”
- Spring 2019: ECE 402 “Advanced Engineering Electromagnetics”
- Fall 2019: ECE 451 “Semiconductor Physics and Devices”
- Spring 2020: ECE 402 “Advanced Engineering Electromagnetics”
- Fall 2020: ECE 350/450 “Applied Quantum Mechanics for Engineers”
| Date | Role | Research Topic | Program | Degree Type | Student Load | Student Name |
|---|---|---|---|---|---|---|
| 2025 | Co-Supervisor | Investigation of future wide bandgap semiconductor materials for integrated circuit applications | Doctor of Philosophy | Doctorate | Full Time | Mr Michael Palmer |
| 2024 | Co-Supervisor | Computational Analysis of the Biomechanics for Aortic Diseases | Doctor of Philosophy | Doctorate | Full Time | Mr Yucheng Xie |
| 2023 | Principal Supervisor | Ultra Low Energy Devices for Indoor Positioning with Data Transmission Capability | Doctor of Philosophy | Doctorate | Full Time | Mr Congyu Song |
| 2023 | Co-Supervisor | Regenerative medicine for gynaecological scarring: efficacy of combination treatment of fractional CO2 laser and platelet-rich plasma treatment. | Doctor of Philosophy | Doctorate | Part Time | Ms Nadia Willison |
| 2023 | Co-Supervisor | One-step procedure to engineer tissue growth using platelet-rich plasma (PRP) | Doctor of Philosophy | Doctorate | Part Time | Mr Tran Tuyet Thi Nguyen |
| 2022 | Co-Supervisor | Biomechanical Analysis of Diseased Coronary Arteries | Doctor of Philosophy | Doctorate | Full Time | Mr Yaofeng Ju |
| 2021 | Co-Supervisor | Solar panel structural optimization for maximum PV power conversion efficiency | Doctor of Philosophy | Doctorate | Part Time | Mr Wing Kong Ng |
| 2021 | Co-Supervisor | iPhD Project: Upscaling Atomic Layer Etching from the Bench to Full Fabrication | Doctor of Philosophy | Doctorate | Full Time | Miss Xiting Zhou |
| Date | Role | Research Topic | Program | Degree Type | Student Load | Student Name |
|---|---|---|---|---|---|---|
| 2022 - 2025 | Co-Supervisor | Towards the Development of High Power Laser Diodes for Pumping Thulium Fibre Lasers | Doctor of Philosophy | Doctorate | Part Time | Mr Jamie Alexander McInnes |
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